Siemens BCP56M, BCP54M, BCP55M Datasheet

BCP 54M ... BCP 56M

NPN Silicon AF Transistors

•For AF driver and output stages

•High collector current

•Low collector-emitter saturation voltage

•Complementary types: BCP 51M...BCP 53M(PNP)

4

5

3

2

1

VPW05980

Type	Marking	Ordering Code	Pin Configuration					Package
BCP 54M	BAs	Q62702-C2595	1 = B	2 = C	3 = E	4 n.c.	5 = C	SCT-595
BCP 55M	BEs	Q62702-C2606
BCP 56M	BHs	Q62702-C2607

Maximum Ratings

Parameter	Symbol	BCP 54M	BCP 55M	BCP 56M	Unit
Collector-emitter voltage	VCEO	45	60	80	V
Collector-base voltage	VCBO	45	60	100
Emitter-base voltage	VEBO	5	5	5
DC collector current	IC		1		mA
Peak collector current	ICM		1.5		A
Base current	IB		100		mA
Peak base current	IBM		200
Total power dissipation, TS ≤ 77 °C	Ptot		1.7		W
Junction temperature	Tj		150		°C
Storage temperature	Tstg		-65...+150
Thermal Resistance
Junction ambient 1)	RthJA		≤98		K/W
Junction - soldering point	RthJS		≤43

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group	1	1	Au -11-1998
Semiconductor Group			1998-11-01

BCP 54M ... BCP 56M

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage		V(BR)CEO				V
IC = 10 mA, IB = 0	BCP 54M		45	-	-
	BCP 55M		60	-	-
	BCP 56M		80	-	-
Collector-base breakdown voltage		V(BR)CBO
IC = 100 µA, IB = 0	BCP 54M		45	-	-
	BCP 55M		60	-	-
	BCP 56M		100	-	-
Emitter-base breakdown voltage		V(BR)EBO	5	-	-
IE = 10 µA, IC = 0
Collector cutoff current		ICBO	-	-	100	nA
VCB = 30 V, IE = 0
Collector cutoff current		ICBO	-	-	20	µA
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)		hFE	25	-	-	-
IC = 5 mA, VCE = 2 V
DC current gain 1)		hFE	40	-	250	-
IC = 150 mA, VCE = 2 V
DC current gain 1)		hFE	25	-	-	-
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)		VCEsat	-	-	0.5	V
IC = 500 mA, IB = 50 mA
Base-emitter voltage	1)	VBE(ON)	-	-	1
IC = 500 mA, VCE = 2 V
AC Characteristics
Transition frequency		fT	-	100	-	MHz
IC = 50 mA, VCE = 10 V, f = 100 MHz

1) Pulse test: t ≤ 300 s, D = 2%

Semiconductor Group	2	2	Au -11-1998
Semiconductor Group			1998-11-01