Siemens BC850CW, BC850BW, BC849CW, BC848CW, BC849BW Datasheet

NPN Silicon AF Transistor	...BC 846 W BC 850 W

Features

●For AF input stages and driver applications

●High current gain

●Low collector-emitter saturation voltage

●Low noise between 30Hz and 15 kHz

●Complementary types: BC 856 W, BC 857 W,

BC 858 W,BC 859 W,

BC 860 W (PNP)

Type	Marking	Ordering code	Pin Configuration			Package
		(tape and reel)	1	2	3
BC 846 AW	1 As	Q62702-C2319	B	E	C	SOT 323
BC 846 BW	1 Bs	Q62702-C2279				SOT 323
BC 847 AW	1 Es	Q62702-C2304				SOT 323
BC 847 BW	1 Fs	Q62702-C2305				SOT 323
BC 847 CW	1 Gs	Q62702-C2306				SOT 323
BC 848 AW	1 Js	Q62702-C2307				SOT 323
BC 848 BW	1 Ks	Q62702-C2308				SOT 323
BC 848 CW	1 Ls	Q62702-C2309				SOT 323
BC 849 BW	2 Bs	Q62702-C2310				SOT 323
BC 849 CW	2 Cs	Q62702-C2311				SOT 323
BC 850 BW	2 Fs	Q62702-C2312				SOT 323
BC 850 CW	2 Gs	Q62702-C2313				SOT 323

Semiconductor Group

1

04.96

BC 846W ... BC 850W

Maximum Ratings

Description	Symbol	BC846W	BC 847 W		Unit
		BC 849 W BC 848 W
		BC 840 W
Collector-emitter voltage	VCEO	65	45	30	V
Collector-base voltage	VCBO	80	50	30	V
Collector-emitter voltage	VCES	80	50	30	V
Emitter-base voltage	VEBO	6	6	5	V
Collector current	IC		100		mA
Collector peak current	ICM		200		mA
Total power dissipation, TS = 115 ˚C	Ptot		250		mW
Junction temperature	Tj		150		˚C
Storage temperature range	Tstg	–65 to 150			˚C
Thermal Resistance
Junction - ambient1)	Rth JA		≤ 240		K/W
Junction - soldering point	Rth JS		≤ 105		K/W

1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu.

Semiconductor Group

2

BC 846W ... BC 850W

Characteristic at TA = 25 ˚C, unless otherwise specified.

Description		Symbol		Ratings		Unit
			min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage		V(BR)CEO				V
IC = 10 mA	BC 846 W		65	–	–
	BC 847 W, BC 850 W		45	–	–
	BC 848 W, BC 849 W		30	–	–
Collector-base breakdown voltage1)		V(BR)CBO				V
IC = 100 μA	BC 846 W		80	–	–
	BC 847 W, BC 850 W		50	–	–
	BC 848 W, BC 849 W		30	–	–
Collector-emitter breakdown voltage		V(BR)CBO				V
IC = 10 μA, VBE = 0	BC 846 W		80	–	–
	BC 847 W, BC 850 W		50	–	–
	BC 848 W, BC 849 W		30	–	–
Emitter-base breakdown voltage		V(BR)EBO				V
IE = 10 μA	BC 846 W, BC 847 W		6
	BC 848 W, BC 849 W		5	–	–
	BC 850			–	–
Collector-base cutoff current		ICBO
VCB = 30 V			–	–	15	nA
VCB = 30 V, TA = 150 ˚C			–	–	5	μA
DC current gain		hFE				–
IC = 10 μA, VCE = 5 V BC 846 AW ... BC 848 AW			–	140	–
BC 846 BW ... BC 850 BW			–	250	–
BC 847 CW ... BC 850 CW			–	480	–
IC = 2 mA, VCE = 5 V BC 846 AW ... BC 848 AW			110	180	220
BC 846 BW ... BC 850 BW			200	290	450
BC 847 CW ... BC 850 CW			420	520	800
Collector-emitter saturation voltage1)		VCEsat	–	90	250	mV
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA			–	900	650
Base-emitter saturation voltage1)		VCEsat	–	700	–	mV
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA			–	900	–
Base-emitter voltage1)		VCEsat	580	660	700	mV
IC = 2 mA, VCE = 0.5 mA
IC = 10 mA, VCE = 5 mA			–	–	770

1)Pulse test : t ≤ 300 μs, D= 2 %.

Semiconductor Group

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