Siemens BCW71G, BCW61FN, BCW71K, BCW71J, BCW71H Datasheet

PNP Silicon AF Transistors	BCW 61
	BCX 71

●For AF input stages and driver applications

●High current gain

●Low collector-emitter saturation voltage

●Low noise between 30 Hz and 15 kHz

●Complementary types: BCW 60, BCX 70 (NPN)

Type

Marking

Ordering Code

Pin Configuration

Package1)

(tape and reel)

1

2

3

BCW 61 A

BAs

Q62702-C452

SOT-23

B

E

C

BCW 61 B

BBs

Q62702-C1585

BCW 61 C

BCs

Q62702-C1478

BCW 61 D

BDs

Q62702-C1556

BCW 61 FF

BFs

Q62702-C1890

BCW 61 FN

BNs

Q62702-C1891

BCX 71G

BGs

Q62702-C1482

BCX 71H

BHs

Q62702-C1586

BCX 71J

BJs

Q62702-C1554

BCX 71 K

BKs

Q62702-C1654

1) For detailed information see chapter Package Outlines.

Semiconductor Group

1

5.91

BCW 61

BCX 71

Maximum Ratings

Parameter	Symbol			Values			Unit
		BCW 61		BCW 61 FF		BCX 71
Collector-emitter voltage	VCE0	32		32		45	V
Collector-base voltage	VCB0	32		32		45
Emitter-base voltage	VEB0		5
Collector current	IC		100				mA
Peak collector current	ICM		200
Peak base current	IBM		200
Total power dissipation, TS = 71 ˚C	Ptot		330				mW
Junction temperature	Tj		150				˚C
Storage temperature range	Tstg		– 65 … + 150
Thermal Resistance
Junction - ambient1)	Rth JA			≤ 310			K/W
Junction - soldering point	Rth JS			≤ 240

1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

2

BCW 61

BCX 71

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage		V(BR)CE0				V
IC = 10 mA	BCW 61, BCW 61 FF		32	–	–
	BCX 71		45	–	–
Collector-base breakdown voltage		V(BR)CB0
IC = 10 μA	BCW 61, BCW 61 FF		32	–	–
	BCX 71		45	–	–
Emitter-base breakdown voltage		V(BR)EB0	5	–	–
IE = 1 μA
Collector cutoff current		ICB0
VCB = 32 V	BCW 61, BCW 61 FF		–	–	20	nA
VCB = 45 V	BCX 71		–	–	20	nA
VCB = 32 V, TA = 150 ˚C	BCW 61, BCW 61 FF		–	–	20	μA
VCB = 45 V, TA = 150 ˚C	BCX 71		–	–	20	μA
Emitter cutoff current		IEB0	–	–	20	nA
VEB = 4 V
DC current gain 1)		hFE				–
IC = 10 μA, VCE = 5 V			20	140	–
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H			30	200	–
BCW 61 FF, BCW 61 C, BCX 71 J			40	300	–
BCW 61 FN, BCW 61 D, BCX 71 K			100	460	–
IC = 2 mA, VCE = 5 V			120	170	220
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H			180	250	310
BCW 61 FF, BCW 61 C, BCX 71 J			250	350	460
BCW 61 FN, BCW 61 D, BCX 71 K			380	500	630
IC = 50 mA, VCE = 1 V			60	–	–
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H			80	–	–
BCW 61 FF, BCW 61 C, BCX 71 J			100	–	–
BCW 61 FN, BCW 61 D, BCX 71 K			110	–	–

1) Pulse test: t ≤ 300 μs, D ≤ 2 %.

Semiconductor Group

3