HiRel NPN Silicon RF Transistor |
BFY 193 |
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Features |
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• HiRel Discrete and Microwave Semiconductor |
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• For low noise, high gain broadband amplifiers up to |
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2 GHz. |
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• For linear broadband amplifiers |
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• Hermetically sealed microwave package |
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• fT = 8 GHz, F = 2.3 dB at 2 GHz |
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• |
qualified |
Micro-X1 |
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• ESA/SCC Detail Spec. No.: 5611/006 |
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ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type |
Marking |
Ordering Code |
Pin Configuration |
Package |
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BFY 193 (ql) |
− |
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see below |
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C |
E |
B |
E |
Micro-X1 |
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(ql) Quality Level: |
P: Professional Quality, |
Ordering Code: Q62702F1610 |
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H: High Rel Quality, |
Ordering Code: on request |
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S: Space Quality, |
Ordering Code: on request |
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ES: ESA Space Quality, |
Ordering Code: Q62702F1701 |
(see Chapter Order Instructions for ordering example) |
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Table 1 |
Maximum Ratings |
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Parameter |
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Symbol |
Limit Values |
Unit |
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Collector-emitter voltage |
VCEO |
12 |
V |
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Collector-emitter voltage, VBE = 0 |
VCES |
20 |
V |
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Collector-base voltage |
VCBO |
20 |
V |
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Emitter-base voltage |
VEBO |
2 |
V |
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Collector current |
IC |
80 |
mA |
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Base current |
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I |
10 1) |
mA |
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B |
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Total power dissipation, T ≤ 104 °C 2) |
P |
580 |
mW |
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S |
tot |
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Junction temperature |
Tj |
200 |
°C |
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Operating temperature range |
Top |
− 65 … + 200 |
°C |
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Storage temperature range |
Tstg |
− 65 … + 200 |
°C |
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Thermal Resistance |
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Junction soldering point 2) |
R |
< 165 |
K/W |
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th JS |
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1)The maximum permissible base current for VFBE measurements is 30 mA (spot measurement duration < 1 s).
2)TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group |
1 |
Draft A03 1998-04-01 |
BFY 193
Table 2 DC Characteristics at TA = 25 °C unless otherwise specified
Parameter |
Symbol |
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Limit Values |
Unit |
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min. |
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typ. |
max. |
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Collector-base cutoff current |
ICBO |
− |
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− |
100 |
μA |
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VCB = 20 V, IE = 0 |
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Collector-emitter cutoff current |
ICEX |
− |
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− |
600 |
μA |
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V |
CE |
= 12 V, I = 0.5 μA 3) |
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B |
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Collector-base cutoff current |
ICBO |
− |
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50 |
nA |
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VCB = 10 V, IE = 0 |
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Emitter-base cutoff current |
IEBO |
− |
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25 |
μA |
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VEB = 2 V, IC = 0 |
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Emitter-base cutoff current |
IEBO |
− |
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0.5 |
μA |
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VEB = 1 V, IC = 0 |
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Base-emitter forward voltage |
VFBE |
− |
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1 |
V |
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IE = 30 mA, IC = 0 |
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DC current gain |
hFE |
50 |
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100 |
175 |
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IC = 30 mA, VCE = 8 V |
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3) |
This test assures V(BR)CE0 > 12 V. |
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Semiconductor Group |
2 |
Draft A03 1998-04-01 |