PNP Silicon Darlington Transistors |
BSP 60 |
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… BSP 62 |
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BSP 50 … BSP 52 (NPN)
Type |
Marking |
Ordering Code |
Pin Configuration |
Package1) |
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(tape and reel) |
1 |
2 |
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3 |
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4 |
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BSP 60 |
BSP 60 |
Q62702-P1166 |
B |
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C |
SOT-223 |
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C |
E |
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BSP 61 |
BSP 61 |
Q62702-P1167 |
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BSP 62 |
BSP 62 |
Q62702-P1168 |
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Maximum Ratings
Parameter |
Symbol |
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Values |
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Unit |
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BSP 60 |
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BSP 61 |
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BSP 62 |
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Collector-emitter voltage |
VCER |
45 |
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60 |
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80 |
V |
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Collector-base voltage |
VCB0 |
60 |
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80 |
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90 |
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Emitter-base voltage |
VEB0 |
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5 |
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Collector current |
IC |
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1 |
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A |
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Peak collector current |
ICM |
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2 |
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Base current |
IB |
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0.1 |
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Total power dissipation, TS = 124 ˚C |
Ptot |
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1.5 |
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W |
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Junction temperature |
Tj |
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150 |
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˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
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≤ 72 |
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K/W |
Junction - soldering point |
Rth JS |
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≤ 17 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
5.91 |
BSP 60 … BSP 62
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage1) |
V(BR)CER |
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V |
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IC = 10 mA, RBE = 150 Ω |
BSP 60 |
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45 |
– |
– |
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BSP 61 |
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60 |
– |
– |
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BSP 62 |
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80 |
– |
– |
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Collector-base breakdown voltage |
V(BR)CB0 |
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IC = 100 μA, IB = 0 |
BSP 60 |
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60 |
– |
– |
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BSP 61 |
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80 |
– |
– |
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BSP 62 |
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90 |
– |
– |
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Emitter-base breakdown voltage |
V(BR)EB0 |
5 |
– |
– |
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IE = 100 μA, IB = 0 |
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Collector-emitter cutoff current |
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ICES |
– |
– |
10 |
μA |
VCE = VCERmax, VBE = 0 |
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Emitter-base cutoff current |
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IEB0 |
– |
– |
10 |
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VEB = 4 V, IC = 0 |
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DC current gain2) |
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hFE |
1000 |
– |
– |
– |
IC = 150 mA, VCE = 10 V |
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IC = 500 mA, VCE = 10 V |
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2000 |
– |
– |
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Collector-emitter saturation voltage2) |
VCEsat |
– |
– |
1.3 |
V |
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IC = 500 mA, IB = 0.5 mA |
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IC = 1 A, IB = 1 mA |
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– |
– |
1.8 |
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Base-emitter saturation voltage2) |
VBEsat |
– |
– |
1.9 |
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IC = 500 mA, IB = 0.5 mA |
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IC = 1 A, IB = 1 mA |
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– |
– |
2.2 |
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AC characteristics |
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Transition frequency |
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fT |
– |
200 |
– |
MHz |
IC = 100 mA, VCE = 5 V, f = 100 MHz |
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Switching times |
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IC = 500 mA, IB1 = IB2 = 0.5 mA |
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ton |
– |
400 |
– |
ns |
(see diagrams) |
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toff |
– |
1500 |
– |
ns |
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1)Compare RBE for thermal stability.
2)Pulse test conditions: t ≤ 300 μs, D = 2 %.
Semiconductor Group |
2 |
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