NPN Silicon AF Transistors |
BCX 68 |
●For general AF applications
●High collector current
●High current gain
●Low collector-emitter saturation voltage
●Complementary type: BCX 69 (PNP)
Type |
Marking |
Ordering Code |
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Pin Configuration |
Package1) |
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(tape and reel) |
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1 |
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BCX 68 |
– |
Q62702-C1572 |
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SOT-89 |
B |
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C |
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E |
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BCX 68-10 |
CB |
Q62702-C1864 |
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BCX 68-16 |
CC |
Q62702-C1865 |
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BCX 68-25 |
CD |
Q62702-C1866 |
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Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Collector-emitter voltage |
VCE0 |
20 |
V |
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Collector-base voltage |
VCB0 |
25 |
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Emitter-base voltage |
VEB0 |
5 |
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Collector current |
IC |
1 |
A |
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Peak collector current |
ICM |
2 |
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Base current |
IB |
100 |
mA |
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Peak base current |
IBM |
200 |
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Total power dissipation, TS = 130 ˚C |
Ptot |
1 |
W |
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Junction temperature |
Tj |
150 |
˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient 2) |
Rth JA |
≤ 75 |
K/W |
Junction - soldering point |
Rth JS |
≤ 20 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
5.91 |
BCX 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage |
V(BR)CE0 |
20 |
– |
– |
V |
IC = 30 mA |
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Collector-base breakdown voltage |
V(BR)CB0 |
25 |
– |
– |
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IC = 10 μA |
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Emitter-base breakdown voltage |
V(BR)EB0 |
5 |
– |
– |
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IE = 1 μA |
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Collector cutoff current |
ICB0 |
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VCB = 25 V |
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– |
– |
100 |
nA |
VCB = 25 V, TA = 150 ˚C |
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– |
– |
100 |
μA |
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Emitter cutoff current |
IEB0 |
– |
– |
10 |
μA |
VEB = 5 V |
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DC current gain1) |
hFE |
50 |
– |
– |
– |
IC = 5 mA, VCE = 10 V |
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IC = 500 mA, VCE = 1 V |
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85 |
– |
375 |
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BCX 68 |
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BCX 68-10 |
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85 |
100 |
160 |
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BCX 68-16 |
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100 |
160 |
250 |
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BCX 68-25 |
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160 |
250 |
375 |
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IC = 1 A, VCE = 1 V |
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60 |
– |
– |
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Collector-emitter saturation voltage1) |
VCEsat |
– |
– |
0.5 |
V |
IC = 1 A, IB = 100 mA |
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Base-emitter voltage1) |
VBE |
– |
0.6 |
– |
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IC = 5 mA, VCE = 10 V |
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IC = 1 A, VCE = 1 V |
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– |
1 |
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AC characteristics |
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Transition frequency |
fT |
– |
100 |
– |
MHz |
IC = 100 mA, VCE = 5 V, f = 20 MHz |
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1) Pulse test: t ≤ 300 μs, D = 2 %. |
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Semiconductor Group |
2 |
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