Siemens BSS80C, BSS80B, BSS82C, BSS82B Datasheet

PNP Silicon Switching Transistors	BSS 80
	BSS 82

●High DC current gain

●Low collector-emitter saturation voltage

●Complementary types: BSS 79, BSS 81 (NPN)

Type	Marking	Ordering Code		Pin Configuration							Package1)
		(tape and reel)
				1			2			3
BSS 80 B	CHs	Q62702-S557									SOT-23
				B			E			C
BSS 80 C	CJs	Q62702-S492
BSS 82 B	CLs	Q62702-S560
BSS 82 C	CMs	Q62702-S482

Maximum Ratings

Parameter	Symbol		Values		Unit
		BSS 80		BSS 82
Collector-emitter voltage	VCE0	40		60	V
Collector-base voltage	VCB0		60
Emitter-base voltage	VEB0		5
Collector current	IC		800		mA
Peak collector current	ICM		1		A
Base current	IB		100		mA
Peak base current	IBM		200
Total power dissipation, TS = 77 ˚C	Ptot		330		mW
Junction temperature	Tj		150		˚C
Storage temperature range	Tstg	– 65 … + 150
Thermal Resistance
Junction - ambient2)	Rth JA		≤ 290		K/W
Junction - soldering point	Rth JS		≤ 220

1)For detailed information see chapter Package Outlines.

2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

BSS 80

BSS 82

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter			Symbol		Values		Unit
				min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage			V(BR)CE0				V
IC = 10 mA	BSS 80			40	–	–
	BSS 82			60	–	–
Collector-base breakdown voltage			V(BR)CB0	60	–	–
IC = 10 μA
Emitter-base breakdown voltage			V(BR)EB0	5	–	–
IE = 10 μA
Collector-base cutoff current			ICB0
VCB = 50 V				–	–	10	nA
VCB = 50 V, TA = 150 ˚C				–	–	10	μA
Emitter-base cutoff current			IEB0	–	–	10	nA
VEB = 3 V
DC current gain			hFE				–
IC = 100 μA, VCE = 10 V	BSS	80 B/82 B		40	–	–
	BSS	80 C/82 C		75	–	–
IC = 1 mA, VCE = 10 V	BSS	80 B/82 B		40	–	–
	BSS	80 C/82 C		100	–	–
IC = 10 mA, VCE = 10 V1)	BSS	80 B/82 B		40	–	–
	BSS	80 C/82 C		100	–	–
IC = 150 mA, VCE = 10 V1)	BSS	80 B/82 B		40	–	120
	BSS	80 C/82 C		100	–	300
IC = 500 mA, VCE = 10 V1)	BSS	80 B/82 B		40	–	–
	BSS	80 C/82 C		50	–	–
Collector-emitter saturation voltage1)			VCEsat	–	–	0.4	V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA				–	–	1.6
Base-emitter saturation voltage1)			VBEsat	–	–	1.3
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA				–	–	2.6

1) Pulse test conditions: t ≤ 300 μs, D = 2 %.
Semiconductor Group	2