Siemens BC817-16W, BC817-40W, BC817-25W, BC818-40W, BC818-25W Datasheet
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BC 817-16W
NPN Silicon AF Transistor
•For general AF applications
•High collector current
•High current gain
•Low collector-emitter saturation voltage
•Complementary types: BC807W, BC808W (PNP)
Type |
Marking |
Ordering Code |
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Pin Configuration |
Package |
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BC 817-16W |
6As |
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Q62702-C2320 |
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1 = B |
2 = E |
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3 = C |
SOT-323 |
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BC 817-25W |
6Bs |
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Q62702-C2278 |
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1 = B |
2 = E |
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3 = C |
SOT-323 |
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BC 817-40W |
6Cs |
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Q62702-C2321 |
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1 = B |
2 = E |
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3 = C |
SOT-323 |
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BC 818-16W |
6Es |
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Q62702-C2322 |
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1 = B |
2 = E |
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3 = C |
SOT-323 |
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BC 818-25W |
6Fs |
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Q62702-C2323 |
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1 = B |
2 = E |
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3 = C |
SOT-323 |
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BC 818-40W |
6Gs |
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Q62702-C2324 |
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1 = B |
2 = E |
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3 = C |
SOT-323 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
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Unit |
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Collector-emitter voltage |
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VCEO |
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V |
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BC |
817 W |
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45 |
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BC |
818 W |
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25 |
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Collector-base voltage |
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VCBO |
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BC |
817 W |
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50 |
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BC |
818 W |
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30 |
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Emitter-base voltage |
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VEBO |
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5 |
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DC collector current |
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IC |
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500 |
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mA |
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Peak collector current |
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ICM |
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1 |
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A |
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Base current |
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IB |
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100 |
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mA |
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Total power dissipation, TS = 130°C |
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Ptot |
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250 |
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mW |
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Junction temperature |
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Tj |
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150 |
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°C |
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Storage temperature |
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Tstg |
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- 65 ... + 150 |
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Thermal Resistance |
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Junction ambient |
1) |
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RthJA |
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≤ 215 |
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K/W |
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Junction - soldering point |
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RthJS |
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≤ 80 |
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1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu |
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Semiconductor Group |
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1 |
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Dec-19-1996 |
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BC 817-16W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
V(BR)CEO |
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V |
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IC = 10 mA, IB = 0 , BC |
817 W |
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45 |
- |
- |
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IC = 10 mA, IB = 0 , BC |
818 W |
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25 |
- |
- |
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Collector-base breakdown voltage |
V(BR)CBO |
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IC = 10 µA, IB = 0 , BC |
817 W |
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50 |
- |
- |
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IC = 10 µA, IB = 0 , BC |
818 W |
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30 |
- |
- |
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Base-emitter breakdown voltage |
V(BR)EBO |
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IE = 10 µA, IC = 0 |
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5 |
- |
- |
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Collector-base cutoff current |
ICBO |
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VCB = 25 V, TA = 25 °C |
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- |
- |
100 |
nA |
VCB = 25 V, TA = 150 °C |
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- |
- |
50 |
µA |
Emitter cutoff current |
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IEBO |
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nA |
VEB = 4 V, IC = 0 |
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- |
- |
100 |
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DC current gain |
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hFE |
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- |
IC = 100 mA, VCE = 1 V, BC ... 16 W |
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100 |
160 |
250 |
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IC = 100 mA, VCE = 1 V, BC ... 25 W |
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160 |
250 |
400 |
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IC = 100 mA, VCE = 1 V, BC ... 40 W |
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250 |
350 |
630 |
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IC = 300 mA, VCE = 1 V, BC ... 16 W |
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60 |
- |
- |
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IC = 300 mA, VCE = 1 V, BC ... 25 W |
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100 |
- |
- |
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IC = 300 mA, VCE = 1 V, BC ... 40 W |
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170 |
- |
- |
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Collector-emitter saturation voltage 1) |
VCEsat |
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V |
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IC = 500 mA, IB = 50 mA |
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- |
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0.7 |
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Base-emitter saturation voltage 1) |
VBEsat |
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IC = 500 mA, IB = 50 mA |
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- |
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1.2 |
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1) Pulse test: t < 300μs; D < 2% |
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Semiconductor Group |
2 |
Dec-19-1996 |
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