Siemens BC859CW, BC860CW, BC860BW, BC859AW, BC858CW Datasheet
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PNP Silicon AF Transistors |
...BC 856W BC 860W |
Features
●For AF input stages and driver applications
●High current gain
●Low collector-emitter saturation voltage
●Low noise between 30 Hz and 15 kHz
●Complementary types: BC 847W, BC 848W,
BC 849W, BC 850W (NPN)
Type |
Marking |
Ordering Code |
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Pin Configuration |
Package1) |
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(tape and reel) |
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BC 856 AW |
3As |
Q62702-C2335 |
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SOT-323 |
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B |
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E |
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C |
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BC 856 BW |
3Bs |
Q62702-C2292 |
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BC 857 AW |
3Es |
Q62702-C2293 |
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BC 857 BW |
3Fs |
Q62702-C2294 |
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BC 857 CW |
3Gs |
Q62702-C2295 |
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BC 858 AW |
3Js |
Q62702-C2296 |
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BC 858 BW |
3Ks |
Q62702-C2297 |
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BC 858 CW |
3Ls |
Q62702-C2298 |
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BC 859 AW |
4As |
Q62702-C2299 |
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BC 859 BW |
4Bs |
Q62702-C2300 |
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BC 859 CW |
4Cs |
Q62702-C2301 |
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BC 860 BW |
4Fs |
Q62702-C2302 |
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BC 860 CW |
4Gs |
Q62702-C2303 |
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1)For detailed information see chapter Package Outlines.
Semiconductor Group |
1 |
04.96 |
BC 856W ... BC 860W
Maximum Ratings
Description |
Symbol |
BC 856W |
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BC 857W |
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BC 858W |
Unit |
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BC 860W |
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BC 859W |
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Collector-emitter voltage |
VCEO |
65 |
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45 |
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30 |
V |
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Collector-base voltage |
VCBO |
80 |
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50 |
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30 |
V |
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Collector-emitter voltage |
VCES |
80 |
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50 |
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30 |
V |
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Emitter-base voltage |
VEBO |
5 |
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5 |
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5 |
V |
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Collector current |
IC |
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100 |
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mA |
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Collector peak current |
ICM |
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200 |
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mA |
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Total power dissipation, TS = 115 ˚C |
Ptot |
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250 |
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mW |
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Junction temperature |
Tj |
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150 |
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˚C |
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Storage temperature range |
Tstg |
–65 |
to 150 |
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˚C |
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Thermal Resistance |
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Junction - ambient1) |
Rth JA |
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≤ 240 |
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K/W |
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Junction - soldering point |
Rth JS |
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≤ 105 |
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K/W |
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Semiconductor Group |
2 |
BC 856W ... BC 860W
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage |
V(BR)CE0 |
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V |
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IC = 10 mA |
BC 856W |
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65 |
– |
– |
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BC 857W, BC 860W |
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45 |
– |
– |
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BC 858W, BC 859W |
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30 |
– |
– |
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Collector-base breakdown voltage |
V(BR)CB0 |
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IC = 10 μA |
BC 856W |
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80 |
– |
– |
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BC 857W, BC 860W |
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50 |
– |
– |
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BC 858W, BC 859W |
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30 |
– |
– |
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Collector-emitter breakdown voltage |
V(BR)CES |
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IC = 10 μA, VBE = 0 |
BC 856W |
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80 |
– |
– |
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BC 857W, BC 860W |
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50 |
– |
– |
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BC 858W, BC 859W |
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30 |
– |
– |
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Emitter-base breakdown voltage |
V(BR)EB0 |
5 |
– |
– |
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IE = 1 μA |
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Collector cutoff current |
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ICB0 |
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VCB = 30 V |
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– |
– |
15 |
nA |
VCB = 30 V, TA = 150 ˚C |
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– |
– |
5 |
μA |
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DC current gain |
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hFE |
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– |
IC = 10 μA, VCE = 5 V |
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BC 856 AW … BC 859 AW |
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– |
140 |
– |
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BC 856 BW … BC 860 BW |
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– |
250 |
– |
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BC 857 CW … BC 860 CW |
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– |
480 |
– |
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IC = 2 mA, VCE = 5 V |
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BC 856 AW … BC 859 AW |
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125 |
180 |
250 |
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BC 856 BW … BC 860 BW |
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220 |
290 |
475 |
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BC 857 CW … BC 860 CW |
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420 |
520 |
800 |
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Collector-emitter saturation voltage1) |
VCEsat |
– |
75 |
300 |
mV |
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IC = 10 mA, IB = 0.5 mA |
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IC = 100 mA, IB = 5 mA |
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– |
250 |
650 |
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Base-emitter saturation voltage1) |
VBEsat |
– |
700 |
– |
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IC = 10 mA, IB = 0.5 mA |
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IC = 100 mA, IB = 5 mA |
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– |
850 |
– |
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Base-emitter voltage |
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VBE(on) |
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IC = 2 mA, VCE = 5 V |
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600 |
650 |
750 |
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IC = 10 mA, VCE = 5 V |
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– |
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820 |
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1)Pulse test: t ≤ 300 μs, D = 2 %.
Semiconductor Group |
3 |
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