Siemens BC860B, BC859C, BC860C, BC858C, BC859B Datasheet

PNP Silicon AF Transistors	...BC 856 BC 860

Features

●For AF input stages and driver applications

●High current gain

●Low collector-emitter saturation voltage

●Low noise between 30 Hz and 15 kHz

●Complementary types: BC 846, BC 847,

BC 849, BC 850 (NPN)

Type

Marking

Ordering Code

Pin Configuration

Package1)

(tape and reel)

1

2

3

BC 856 A

3As

Q62702-C1773

SOT-23

B

E

C

BC 856 B

3Bs

Q62702-C1886

BC 857 A

3Es

Q62702-C1850

BC 857 B

3Fs

Q62702-C1688

BC 857 C

3Gs

Q62702-C1851

BC 858 A

3Js

Q62702-C1742

BC 858 B

3Ks

Q62702-C1698

BC 858 C

3Ls

Q62702-C1507

BC 859 A

4As

Q62702-C1887

BC 859 B

4Bs

Q62702-C1774

BC 859 C

4Cs

Q62702-C1761

BC 860 B

4Fs

Q62702-C1888

BC 860 C

4Gs

Q62702-C1889

1)For detailed information see chapter Package Outlines.

Semiconductor Group

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04.96

BC 856 ... BC 860

Maximum Ratings

Parameter		Symbol				Values			Unit
				BC 856		BC 857		BC 858
						BC 860		BC 859
Collector-emitter voltage		VCE0		65		45		30	V
Collector-base voltage		VCB0		80		50		30
Collector-emitter voltage		VCES		80		50		30
Emitter-base voltage		VEB0		5		5		5
Collector current		IC			100				mA
Peak collector current		ICM			200
Peak base current		IBM			200
Peak emitter current		IEM			200
S	= 71 ˚C	P	tot		330				mW
Total power dissipation, T
Junction temperature		Tj			150				˚C
Storage temperature range		Tstg			– 65 … + 150
Thermal Resistance
Junction - ambient1)		Rth JA				≤ 310			K/W
Junction - soldering point		Rth JS				≤ 240

1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

2

BC 856 ... BC 860

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage		V(BR)CE0				V
IC = 10 mA	BC 856		65	–	–
	BC 857, BC 860		45	–	–
	BC 858, BC 859		30	–	–
Collector-base breakdown voltage		V(BR)CB0
IC = 10 μA	BC 856		80	–	–
	BC 857, BC 860		50	–	–
	BC 858, BC 859		30	–	–
Collector-emitter breakdown voltage		V(BR)CES
IC = 10 μA, VBE = 0	BC 856		80	–	–
	BC 857, BC 860		50	–	–
	BC 858, BC 859		30	–	–
Emitter-base breakdown voltage		V(BR)EB0	5	–	–
IE = 1 μA
Collector cutoff current		ICB0
VCB = 30 V			–	1	15	nA
VCB = 30 V, TA = 150 ˚C			–	–	4	μA
DC current gain		hFE				–
IC = 10 μA, VCE = 5 V
BC 856 A … BC 859 A			–	140	–
BC 856 B … BC 860 B			–	250	–
BC 857 C … BC 860 C			–	480	–
IC = 2 mA, VCE = 5 V
BC 856 A … BC 859 A			125	180	250
BC 856 B … BC 860 B			220	290	475
BC 857 C … BC 860 C			420	520	800
Collector-emitter saturation voltage1)		VCEsat	–	75	300	mV
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA			–	250	650
Base-emitter saturation voltage1)		VBEsat	–	700	–
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA			–	850	–
Base-emitter voltage		VBE(on)
IC = 2 mA, VCE = 5 V			600	650	750
IC = 10 mA, VCE = 5 V			–	–	820

1)Pulse test: t ≤ 300 μs, D = 2 %.

Semiconductor Group

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