Silicon Schottky Diodes |
BAS 125 … |
●For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
●Integrated diffused guard ring
●Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type |
Marking |
Ordering Code |
Pin Configuration |
Package1) |
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(tape and reel) |
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BAS 125 |
13 |
Q62702-D1316 |
|
SOT-23 |
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BAS 125-04 |
14 |
Q62702-D1321 |
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BAS 125-05 |
15 |
Q62702-D1322 |
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BAS 125-06 |
16 |
Q62702-D1323 |
|
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1) For detailed information see chapter Package Outlines.
Semiconductor Group |
1 |
02.96 |
BAS 125 …
●For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
●Integrated diffused guard ring
●Low forward voltage
ESD: Electrostatic discharge |
sensitive device, observe handling precautions! |
|
|||
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Type |
Marking |
|
Ordering Code |
Pin Configuration |
Package1) |
|
|
|
(tape and reel) |
|
|
|
|
|
|
|
|
BAS 125-07 |
17 |
|
Q62702-D1327 |
|
SOT-143 |
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Maximum Ratings per Diode
Parameter |
Symbol |
Values |
Unit |
|
|
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Reverse voltage |
VR |
25 |
V |
|
|
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Forward current |
IF |
100 |
mA |
|
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Surge forward current, t ≤ 10 ms |
IFSM |
500 |
|
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Total power dissipation, TS ≤ 25 ˚C3) |
Ptot |
250 |
mW |
Junction temperature |
Tj |
150 |
˚C |
|
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Storage temperature range |
Tstg |
– 55 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
≤ 725 |
K/W |
Junction - soldering point |
Rth JS |
≤ 565 |
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|
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1)For detailed information see chapter Package Outlines.
2)Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3)450 mW per package.
Semiconductor Group |
2 |
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