Siemens BC850B, BC848C, BC849C, BC848B, BC850C Datasheet

NPN Silicon AF Transistors	...BC 846 BC 850

Features

●For AF input stages and driver applications

●High current gain

●Low collector-emitter saturation voltage

●Low noise between 30 Hz and 15 kHz

●Complementary types: BC 856, BC 857,

BC 859, BC 860 (PNP)

Type

Marking

Ordering Code

Pin Configuration

Package1)

(tape and reel)

1

2

3

BC 846 A

1As

Q62702-C1772

SOT-23

B

E

C

BC 846 B

1Bs

Q62702-C1746

BC 847 A

1Es

Q62702-C1884

BC 847 B

1Fs

Q62702-C1687

BC 847 C

1Gs

Q62702-C1715

BC 848 A

1Js

Q62702-C1741

BC 848 B

1Ks

Q62702-C1704

BC 848 C

1Ls

Q62702-C1506

BC 849 B

2Bs

Q62702-C1727

BC 849 C

2Cs

Q62702-C1713

BC 850 B

2Fs

Q62702-C1885

BC 850 C

2Gs

Q62702-C1712

1)For detailed information see chapter Package Outlines.

Semiconductor Group

1

04.96

BC 846 ... BC 850

Maximum Ratings

Parameter		Symbol				Values			Unit
				BC 846		BC 847		BC 848
						BC 850		BC 849
Collector-emitter voltage		VCE0		65		45		30	V
Collector-base voltage		VCB0		80		50		30
Collector-emitter voltage		VCES		80		50		30
Emitter-base voltage		VEB0		6		6		5
Collector current		IC			100				mA
Peak collector current		ICM			200
Peak base current		IBM			200
Peak emitter current		IEM			200
S	= 71 ˚C	P	tot		330				mW
Total power dissipation, T
Junction temperature		Tj			150				˚C
Storage temperature range		Tstg			– 65 … + 150
Thermal Resistance
Junction - ambient1)		Rth JA				≤ 310			K/W
Junction - soldering point		Rth JS				≤ 240

1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

2

BC 846 ... BC 850

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage		V(BR)CE0				V
IC = 10 mA	BC 846		65	–	–
	BC 847, BC 850		45	–	–
	BC 848, BC 849		30	–	–
Collector-base breakdown voltage		V(BR)CB0
IC = 10 μA	BC 846		80	–	–
	BC 847, BC 850		50	–	–
	BC 848, BC 849		30	–	–
Collector-emitter breakdown voltage		V(BR)CES
IC = 10 μA, VBE = 0	BC 846		80	–	–
	BC 847, BC 850		50	–	–
	BC 848, BC 849		30	–	–
Emitter-base breakdown voltage		V(BR)EB0
IE = 1 μA	BC 846, BC 847		6	–	–
	BC 848, BC 849, BC 850		5	–	–
Collector cutoff current		ICB0
VCB = 30 V			–	–	15	nA
VCB = 30 V, TA = 150 ˚C			–	–	5	μA
DC current gain		hFE				–
IC = 10 μA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A			–	140	–
BC 846 B … BC 850 B			–	250	–
BC 847 C, BC 848 C, BC 849 C, BC 850 C			–	480	–
IC = 2 mA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A			110	180	220
BC 846 B … BC 850 B			200	290	450
BC 847 C, BC 848 C, BC 849 C, BC 850 C			420	520	800
Collector-emitter saturation voltage1)		VCEsat	–	90	250	mV
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA			–	200	600
Base-emitter saturation voltage1)		VBEsat	–	700	–
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA			–	900	–
Base-emitter voltage		VBE(on)
IC = 2 mA, VCE = 5 V			580	660	700
IC = 10 mA, VCE = 5 V			–	–	770

1)Pulse test: t ≤ 300 μs, D = 2 %.

Semiconductor Group

3