BSS 295
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
•Logic Level
•VGS(th) = 0.8...2.0V
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Pin 1 |
Pin 2 |
Pin 3 |
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G |
D |
S |
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Type |
VDS |
ID |
RDS(on) |
Package |
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Marking |
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BSS 295 |
50 V |
1.4 A |
0.3 Ω |
TO-92 |
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SS 295 |
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Type |
Ordering Code |
Tape and Reel Information |
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BSS 295 |
Q67000-S238 |
E6288 |
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BSS 295 |
Q67000-S105 |
E6325 |
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Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Drain source voltage |
VDS |
50 |
V |
Drain-gate voltage |
VDGR |
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RGS = 20 kΩ |
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50 |
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Gate source voltage |
VGS |
± 14 |
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Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
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Continuous drain current |
ID |
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A |
TA = 24 °C |
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1.4 |
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DC drain current, pulsed |
IDpuls |
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TA = 25 °C |
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5.6 |
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Power dissipation |
Ptot |
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W |
TA = 25 °C |
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1 |
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Semiconductor Group |
1 |
12/05/1997 |
BSS 295
Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Chip or operating temperature |
Tj |
-55 ... + 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |
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Thermal resistance, chip to ambient air 1) |
R |
≤ 125 |
K/W |
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thJA |
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DIN humidity category, DIN 40 040 |
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E |
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IEC climatic category, DIN IEC 68-1 |
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55 / 150 / 56 |
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Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Static Characteristics |
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Drainsource breakdown voltage |
V(BR)DSS |
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V |
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C |
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50 |
- |
- |
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Gate threshold voltage |
VGS(th) |
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VGS=VDS, ID = 1 mA |
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0.8 |
1.4 |
2 |
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Zero gate voltage drain current |
IDSS |
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VDS = 50 V, VGS = 0 V, Tj = 25 °C |
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0.1 |
1 |
µA |
VDS = 50 V, VGS = 0 V, Tj = 125 °C |
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- |
8 |
50 |
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VDS = 30 V, VGS = 0 V, Tj = 25 °C |
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- |
- |
100 |
nA |
Gate-source leakage current |
IGSS |
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nA |
VGS = 20 V, VDS = 0 V |
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10 |
100 |
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Drain-Source on-state resistance |
RDS(on) |
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Ω |
VGS = 10 V, ID = 1.4 A |
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- |
0.25 |
0.3 |
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VGS = 4.5 V, ID = 1.4 A |
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- |
0.45 |
0.5 |
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Semiconductor Group |
2 |
12/05/1997 |
BSS 295
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Dynamic Characteristics |
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Transconductance |
gfs |
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S |
VDS³ 2 * ID * RDS(on)max, ID = 1.4 A |
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0.5 |
1.6 |
- |
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Input capacitance |
Ciss |
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pF |
VGS = 0 V, VDS = 25 V, f = 1 MHz |
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- |
320 |
425 |
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Output capacitance |
Coss |
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VGS = 0 V, VDS = 25 V, f = 1 MHz |
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- |
110 |
170 |
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Reverse transfer capacitance |
Crss |
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VGS = 0 V, VDS = 25 V, f = 1 MHz |
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- |
50 |
75 |
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Turn-on delay time |
td(on) |
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ns |
VDD = 30 V, VGS = 10 V, ID = 0.29 A |
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RG = 50 W |
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- |
8 |
12 |
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Rise time |
tr |
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VDD = 30 V, VGS = 10 V, ID = 0.29 A |
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RG = 50 W |
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20 |
30 |
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Turn-off delay time |
td(off) |
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VDD = 30 V, VGS = 10 V, ID = 0.29 A |
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RG = 50 W |
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- |
120 |
160 |
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Fall time |
tf |
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VDD = 30 V, VGS = 10 V, ID = 0.29 A |
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RG = 50 W |
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- |
85 |
115 |
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Semiconductor Group |
3 |
12/05/1997 |
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