NPN Silicon Switching Transistors |
BSS 79 |
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BSS 81 |
●High DC current gain
●Low collector-emitter saturation voltage
●Complementary types: BSS 80, BSS 82 (PNP)
Type |
Marking |
Ordering Code |
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Pin Configuration |
Package1) |
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(tape and reel) |
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1 |
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3 |
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BSS 79 B |
CEs |
Q62702-S503 |
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SOT-23 |
B |
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E |
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C |
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BSS 79 C |
CFs |
Q62702-S501 |
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BSS 81 B |
CDs |
Q62702-S555 |
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BSS 81 C |
CGs |
Q62702-S605 |
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Maximum Ratings
Parameter |
Symbol |
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Values |
Unit |
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BSS 79 |
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BSS 81 |
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Collector-emitter voltage |
VCE0 |
40 |
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35 |
V |
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Collector-base voltage |
VCB0 |
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75 |
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Emitter-base voltage |
VEB0 |
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6 |
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Collector current |
IC |
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800 |
mA |
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Peak collector current |
ICM |
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1 |
A |
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Base current |
IB |
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100 |
mA |
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Peak base current |
IBM |
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200 |
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Total power dissipation, TS = 77 ˚C |
Ptot |
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330 |
mW |
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Junction temperature |
Tj |
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150 |
˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
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≤ 290 |
K/W |
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Junction - soldering point |
Rth JS |
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≤ 220 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
5.91 |
BSS 79
BSS 81
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage |
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V(BR)CE0 |
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V |
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IC = 10 mA |
BSS 79 |
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40 |
– |
– |
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BSS 81 |
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35 |
– |
– |
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Collector-base breakdown voltage |
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V(BR)CB0 |
75 |
– |
– |
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IC = 10 μA |
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Emitter-base breakdown voltage |
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V(BR)EB0 |
6 |
– |
– |
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IE = 10 μA |
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Collector-base cutoff current |
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ICB0 |
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VCB = 60 V |
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– |
– |
10 |
nA |
VCB = 60 V, TA = 150 ˚C |
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– |
– |
10 |
μA |
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Emitter-base cutoff current |
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IEB0 |
– |
– |
10 |
nA |
VEB = 3 V |
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DC current gain |
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hFE |
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– |
IC = 100 μA, VCE = 10 V |
BSS |
79 B/81 B |
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20 |
– |
– |
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BSS |
79 C/81 C |
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35 |
– |
– |
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IC = 1 mA, VCE = 10 V |
BSS |
79 B/81 B |
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25 |
– |
– |
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BSS |
79 C/81 C |
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50 |
– |
– |
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IC = 10 mA, VCE = 10 V1) |
BSS |
79 B/81 B |
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35 |
– |
– |
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BSS |
79 C/81 C |
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75 |
– |
– |
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IC = 150 mA, VCE = 10 V1) |
BSS |
79 B/81 B |
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40 |
– |
120 |
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BSS |
79 C/81 C |
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100 |
– |
300 |
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IC = 500 mA, VCE = 10 V1) |
BSS |
79 B/81 B |
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25 |
– |
– |
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BSS |
79 C/81 C |
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40 |
– |
– |
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Collector-emitter saturation voltage1) |
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VCEsat |
– |
– |
0.3 |
V |
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IC = 150 mA, IB = 15 mA |
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IC = 500 mA, IB = 50 mA |
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– |
– |
1.3 |
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Base-emitter saturation voltage1) |
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VBEsat |
– |
– |
1.2 |
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IC = 150 mA, IB = 15 mA |
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IC = 500 mA, IB = 50 mA |
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– |
– |
2.0 |
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1) Pulse test conditions: t ≤ 300 μs, D = 2 %. |
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Semiconductor Group |
2 |
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