PROFET® BTS 425 L1
Smart Highside Power Switch
Features
·Overload protection
·Current limitation
·Short circuit protection
·Thermal shutdown
·Overvoltage protection (including load dump)
·Reverse battery protection1)
·Undervoltage and overvoltage shutdown with auto-restart and hysteresis
·Open drain diagnostic output
·Open load detection in ON-state
·CMOS compatible input
·Loss of ground and loss of Vbb protection
·Electrostatic discharge (ESD) protection
Application
·mC compatible power switch with diagnostic feedback for 12 V DC grounded loads
·Most suitable for resistive and lamp loads
General Description
Product Summary
Overvoltage protection |
Vbb(AZ) |
43 |
V |
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Operating voltage |
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Vbb(on) |
5.0 ... 24 V |
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On-state resistance |
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RON |
60 |
mΩ |
Load current (ISO) |
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IL(ISO) |
7.0 |
A |
Current limitation |
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IL(SCr) |
17 |
A |
TO-220AB/5 |
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5 |
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5 |
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5 |
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Standard |
Straight leads |
SMD |
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N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOSâ technology. Fully protected by embedded protection functions.
Voltage
source
V Logic
Voltage
sensor
2 |
IN |
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ESD |
Logic |
4 |
ST |
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+ Vbb |
3 |
Overvoltage |
Current |
Gate |
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protection |
limit |
protection |
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Charge pump |
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OUT |
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5 |
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Level shifter |
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Temperature |
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Rectifier |
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sensor |
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Open load
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Short to Vbb |
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Load |
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RO |
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GND |
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GND |
PROFETâ |
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1 |
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Signal GND |
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Load GND |
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1) With external current limit (e.g. resistor RGND=150 W) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Semiconductor Group |
1 |
02.97 |
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BTS 425 L1 |
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Pin |
Symbol |
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Function |
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1 |
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GND |
- |
Logic ground |
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2 |
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IN |
I |
Input, activates the power switch in case of logical high signal |
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3 |
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Vbb |
+ |
Positive power supply voltage, |
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the tab is shorted to this pin |
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4 |
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ST |
S |
Diagnostic feedback, low on failure |
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5 |
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OUT |
O |
Output to the load |
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(Load, L) |
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Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter |
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Symbol |
Values |
Unit |
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Supply voltage (overvoltage protection see page 3) |
Vbb |
43 |
V |
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Supply voltage for full short circuit protection |
Vbb |
24 |
V |
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Tj Start=-40 ...+150°C |
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Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V |
VLoad dump4) |
60 |
V |
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RI3)= 2 Ω, RL= 1.7 Ω, td= 200 ms, IN= low or high |
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Load current (Short circuit current, see page 4) |
IL |
self-limited |
A |
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Operating temperature range |
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Tj |
-40 ...+150 |
°C |
Storage temperature range |
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Tstg |
-55 ...+150 |
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Power dissipation (DC), TC ≤ 25 °C |
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Ptot |
75 |
W |
Electrostatic discharge capability (ESD) |
IN: |
VESD |
1.0 |
kV |
(Human Body Model) |
all other pins: |
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2.0 |
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acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 |
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Input voltage (DC) |
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VIN |
-10 ... +16 |
V |
Current through input pin (DC) |
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IIN |
±2.0 |
mA |
Current through status pin (DC) |
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IST |
±5.0 |
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see internal circuit diagrams page 6 |
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Thermal Characteristics
Parameter and Conditions |
Symbol |
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Values |
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Unit |
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min |
typ |
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max |
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Thermal resistance |
chip - case: |
RthJC |
-- |
-- |
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1.67 |
K/W |
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junction - ambient (free air): |
RthJA |
-- |
-- |
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75 |
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SMD version, device on PCB5): |
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-- |
34 |
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-- |
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2) |
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a |
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150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the |
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protection of the input is integrated. |
3)RI = internal resistance of the load dump test pulse generator
4)VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) |
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm |
2 |
(one layer, 70μm thick) copper area for Vbb |
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connection. PCB is vertical without blown air.
Semiconductor Group |
2 |
BTS 425 L1
Electrical Characteristics
Parameter and Conditions |
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Symbol |
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Values |
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Unit |
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at Tj = 25 °C, Vbb = 12 V unless otherwise specified |
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min |
typ |
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max |
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Load Switching Capabilities and Characteristics |
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On-state resistance (pin 3 to 5) |
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IL = 2 A |
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Tj=25 °C: |
RON |
-- |
50 |
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60 |
Ω |
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m |
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Tj=150 °C: |
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100 |
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120 |
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Nominal load current, ISO Norm (pin 3 to 5) |
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5.8 |
7.0 |
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VON = 0.5 V, TC = 85 °C |
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IL(ISO) |
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-- |
A |
Output current (pin 5) while GND disconnected or |
IL(GNDhigh) |
-- |
-- |
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10 |
mA |
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GND pulled up, Vbb=30 V, VIN= 0, see diagram |
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page 7 |
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Turn-on time |
IN |
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to 90% VOUT: |
ton |
80 |
200 |
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400 |
μs |
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Turn-off time |
IN |
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to 10% VOUT: |
toff |
80 |
230 |
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450 |
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RL = 12 Ω, Tj =-40...+150°C |
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Slew rate on |
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dV /dton |
0.1 |
-- |
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1 |
V/μs |
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C |
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Slew rate off |
Ω, Tj =-40...+150°C |
-dV/dtoff |
0.1 |
-- |
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1 |
V/μs |
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70 to 40% VOUT, RL = 12 |
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Operating Parameters |
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Operating voltage6) |
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Tj =-40...+150°C: |
Vbb(on) |
5.0 |
-- |
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24 |
V |
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Undervoltage shutdown |
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Tj =-40...+150°C: |
Vbb(under) |
3.5 |
-- |
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5.0 |
V |
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Undervoltage restart |
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Tj =-40...+150°C: |
Vbb(u rst) |
-- |
-- |
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5.0 |
V |
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Undervoltage restart of charge pump |
Vbb(ucp) |
-- |
5.6 |
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7.0 |
V |
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see diagram page 10 |
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Tj =-40...+150°C: |
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Undervoltage hysteresis |
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Vbb(under) |
-- |
0.2 |
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-- |
V |
Vbb(under) = Vbb(u rst) - Vbb(under) |
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Overvoltage shutdown |
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Tj =-40...+150°C: |
Vbb(over) |
24 |
-- |
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34 |
V |
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Overvoltage restart |
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Tj =-40...+150°C: |
Vbb(o rst) |
23 |
-- |
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-- |
V |
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Overvoltage hysteresis |
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Tj =-40...+150°C: |
Vbb(over) |
-- |
0.5 |
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-- |
V |
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Overvoltage protection7) |
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Tj =-40...+150°C: |
Vbb(AZ) |
42 |
47 |
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-- |
V |
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Ibb=40 mA |
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Standby current (pin 3) |
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Tj=-40...+25°C : |
Ibb(off) |
-- |
10 |
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25 |
μA |
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VIN=0 |
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Tj= 150°C: |
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-- |
12 |
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28 |
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Leakage output current (included in Ibb(off)) |
IL(off) |
-- |
-- |
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12 |
μA |
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VIN=0 |
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Operating current (Pin 1)8), VIN=5 V, |
IGND |
-- |
1.8 |
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3.5 |
mA |
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Tj =-40...+150°C |
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6)At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
7)See also VON(CL) in table of protection functions and circuit diagram page 7.
8) |
Add |
IST, if IST > 0, add |
IIN, if VIN>5.5 V |
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Semiconductor Group |
3 |
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BTS 425 L1
Parameter and Conditions |
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Symbol |
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Values |
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Unit |
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at Tj = 25 °C, Vbb = 12 V unless otherwise specified |
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min |
typ |
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max |
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Protection Functions |
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Initial peak short circuit current limit (pin 3 to 5) |
IL(SCp) |
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Tj =-40°C: |
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27 |
37 |
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47 |
A |
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Tj =25°C: |
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20 |
30 |
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40 |
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Tj =+150°C: |
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12 |
18 |
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25 |
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Repetitive short circuit shutdown current limit |
IL(SCr) |
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Tj = Tjt (see timing diagrams, page 9) |
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-- |
17 |
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-- |
A |
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Thermal overload trip temperature |
Tjt |
150 |
-- |
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-- |
°C |
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Thermal hysteresis |
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Tjt |
-- |
10 |
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-- |
K |
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Reverse battery (pin 3 to 1) 9) |
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-Vbb |
-- |
-- |
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32 |
V |
Reverse battery voltage drop (Vout > Vbb) |
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IL = -2 A |
Tj=150 °C: |
-VON(rev) |
-- |
610 |
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-- |
mV |
Diagnostic Characteristics |
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Open load detection current |
Tj=-40 °C : |
IL (OL) |
150 |
600 |
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950 |
mA |
(on-condition, ) |
Tj=25..150°C: |
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150 |
450 |
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750 |
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Open load detection voltage10) |
(off-condition) |
VOUT(OL) |
2 |
3 |
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4 |
V |
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Tj=-40..150°C: |
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Internal output pull down |
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kΩ |
(pin 5 to 1), VOUT=5 V, Tj=-40..150°C |
RO |
4 |
10 |
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30 |
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9) |
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source |
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diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal |
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operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature |
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protection is not active during reverse current operation! Input and Status currents have to be limited (see |
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10) |
max. ratings page 2 and circuit page 7). |
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External pull up resistor required for open load detection in off state. |
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Semiconductor Group |
4 |
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