BP 103
NPN-Silizium-Fototransistor |
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BP 103 |
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Silicon NPN Phototransistor |
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fet06017
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm
●Hohe Linearität
●TO-18, Bodenplatte, klares EpoxyGieβharz, mit Basisanschluβ
Anwendungen
●Computer-Blitzlichtgeräte
●Lichtschranken für Gleichund Wechsellichtbetrieb
●Industrieelektronik
●“Messen/Steuern/Regeln”
Typ |
Bestellnummer |
Type |
Ordering Code |
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BP 103 |
Q62702-P75 |
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BP 103-2 |
Q62702-P79-S1 |
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BP 103-3 |
Q62702-P79-S2 |
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BP 103-4 |
Q62702-P79-S4 |
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BP 103-51) |
Q 62702-P781 |
Features
●Especially suitable for applications from 420 nm to 1130 nm
●High linearity
●TO-18, base plate, transparent epoxy resin lens, with base connection
Applications
●Computer-controlled flashes
●Photointerrupters
●Industrial electronics
●For control and drive circuits
1)Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden. Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor.
1)Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield. In this case we will reserve us the right of delivering a substitute group.
Semiconductor Group |
211 |
10.95 |
BP 103
Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
– 40 ... + 80 |
°C |
Operating and storage temperature range |
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Löttemperatur bei Tauchlötung |
TS |
260 |
°C |
Lötstelle ³ 2 mm vom Gehäuse, |
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Lötzeit t £ 5 s |
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Dip soldering temperature, ³ 2 mm distance |
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from case bottom t £ 5 s |
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Löttemperatur bei Kolbenlötung |
TS |
300 |
°C |
Lötstelle ³ 2 mm vom Gehäuse, |
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Lötzeit t £ 3 s |
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Iron soldering temperature, ³ 2 mm distance |
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from case bottom t £ 3 s |
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Kollektor-Emitterspannung |
VCE |
50 |
V |
Collector-emitter voltage |
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Kollektorstrom |
IC |
100 |
mA |
Collector current |
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Kollektorspitzenstrom, t < 10 ms |
ICS |
200 |
mA |
Collector surge current |
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Emitter-Basisspannung |
VEB |
7 |
V |
Emitter -base voltage |
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Verlustleistung, TA = 25 °C |
Ptot |
150 |
mW |
Total power dissipation |
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Wärmewiderstand |
RthJA |
500 |
K/W |
Thermal resistance |
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Semiconductor Group |
212 |
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