Siemens BC638, BC640, BC636 Datasheet

PNP Silicon AF Transistors	BC 636
	… BC 640

High current gain

High collector current

Low collector-emitter saturation voltage

Complementary types: BC 635, BC 637,
BC 639 (NPN)	2
	3
	1

Type

Marking

Ordering Code

Pin Configuration

Package1)

1

2

3

BC 636

–

Q68000-A3365

TO-92

E

C

B

BC 638

Q68000-A3366

BC 640

Q68000-A3367

If desired, selected transistors, type BC 6 –10 (hFE = 63 … 160), or BC 6 –16 (hFE = 100 … 250) are available. Ordering codes upon request.

1) For detailed information see chapter Package Outlines.

Semiconductor Group

1

5.91

BC 636 … BC 640

Maximum Ratings

Parameter	Symbol	Values					Unit
		BC 636		BC 638		BC 640
Collector-emitter voltage	VCE0	45		60		80	V
Collector-base voltage	VCB0	45		60		100
Emitter-base voltage	VEB0		5
Collector current	IC		1				A
Peak collector current	ICM		1.5
Base current	IB		100				mA
Peak base current	IBM		200
Total power dissipation, TC = 90 ˚C1)	Ptot		0.8 (1)				W
Junction temperature	Tj		150				˚C
Storage temperature range	Tstg		– 65 … + 150
Thermal Resistance
Junction - ambient1)	Rth JA			≤ 156			K/W
Junction - case2)	Rth JC			≤ 55

1)If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.

2)Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group

2