Siemens BCX59X, BCX59VII, BCX59IX, BCX58X, BCX58VII Datasheet

NPN Silicon AF Transistors	BCX 58
	BCX 59

●High current gain

●Low collector-emitter saturation voltage

●Complementary types: BCX 78, BCX 79 (PNP)

2

3

1

Type

Marking

Ordering Code

Pin Configuration

Package1)

1

2

3

BCX 58 VIII

–

Q62702-C619

TO-92

C

B

E

BCX 58 IX

Q62702-C620

BCX 58 X

Q62702-C621

BCX 59 VIII

Q62702-C623

BCX 59 IX

Q62702-C624

BCX 59 X

Q62702-C625

Maximum Ratings

Parameter	Symbol		Values		Unit
		BCX 58		BCX 59
Collector-emitter voltage	VCE0	32		45	V
Collector-base voltage	VCB0	32		45
Emitter-base voltage	VEB0		7
Collector current	IC		100		mA
Peak collector current	ICM		200
Peak base current	IBM		200
Total power dissipation, TC = 70 ˚C	Ptot		500		mW
Junction temperature	Tj		150		˚C
Storage temperature range	Tstg		– 65 … + 150
Thermal Resistance
Junction - ambient	Rth JA		≤ 250		K/W
Junction - case2)	Rth JC		≤ 160

1)For detailed information see chapter Package Outlines.

2)Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group

1

5.91

BCX 58

BCX 59

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage		V(BR)CE0				V
IC = 2 mA	BCX 58		32	–	–
	BCX 59		45	–	–
Collector-base breakdown voltage		V(BR)CB0
IC = 10 μA	BCX 58		32	–	–
	BCX 59		45	–	–
Emitter-base breakdown voltage		V(BR)EB0	7	–	–
IE = 1 μA
Collector cutoff current		ICB0
VCB = 32 V	BCX 58		–	–	20	nA
VCB = 45 V	BCX 59		–	–	20	nA
VCB = 32 V, TA = 150 ˚C	BCX 58		–	–	10	μA
VCB = 45 V, TA = 150 ˚C	BCX 59		–	–	10	μA
Collector cutoff current		ICEX				μA
VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C			–	–	20
VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C			–	–	20
Emitter cutoff current		IEB0	–	–	20	nA
VEB = 4 V
DC current gain		hFE				–
IC = 10 μA, VCE = 5 V			20	78	–
BCX 58 VII,	BCX 59 VII
BCX 58 VIII, BCX 59 VIII			20	145	–
BCX 58 IX,	BCX 59 IX		40	220	–
BCX 58 X,	BCX 59 X		100	300	–
IC = 2 mA, VCE = 5 V			120	170	220
BCX 58 VII,	BCX 59 VII
BCX 58 VIII, BCX 59 VIII			180	250	310
BCX 58 IX,	BCX 59 IX		250	350	460
BCX 58 X,	BCX 59 X		380	500	630
IC = 100 mA, VCE = 1 V1)			40	–	–
BCX 58 VII,	BCX 59 VII
BCX 58 VIII, BCX 59 VIII			45	–	–
BCX 58 IX,	BCX 59 IX		60	–	–
BCX 58 X,	BCX 59 X		60	–	–

1) Pulse test: t ≤ 300 μs, D ≤ 2 %.
Semiconductor Group	2