BAR 64...
Silicon PIN Diode
lHigh voltage current controlled
lRF resistor for RF attenuator and swirches
lFreqency range above 1 MHz
l Low resistance and short carrier lifetime l For frequencies up to 3 GHz
Type |
Marking |
Ordering code |
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Pin configuration |
Package 1) |
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(tape and reel) |
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1 |
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2 |
3 |
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BAR 64 |
POs |
Q62702-A1041 |
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A |
- |
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C |
SOT-23 |
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BAR 64-04 |
PPs |
Q62702-A1010 |
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A |
C |
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C/A |
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BAR 64-05 |
PRs |
Q62702-A1042 |
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A |
A |
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C/C |
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BAR 64-06 |
PSs |
Q62702-A1043 |
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C |
C |
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A/A |
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Maximum ratings per diode |
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Parameter |
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Symbol |
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BAR 64 |
Unit |
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Reverse voltage
Forward current
Total Power dissipation TS ≤ 90°C BAR64-04,-05,-06 TS ≤ 65°C
Junction temperature
Operating temperature range
Storage temperature range
VR |
200 |
V |
IF |
100 |
mA |
Ptot |
250 |
mW |
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250 |
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Tj |
150 |
°C |
Top |
-55 +150°C |
°C |
Tstg |
-55...+150°C |
°C |
Thermal resistance |
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Junction-ambient 1) |
Rth JA |
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K/W |
BAR64 |
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≤ 320 |
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BAR64-04,-05,-06 |
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≤ 500 |
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Junction-soldering point |
Rth JS |
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BAR64 |
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≤ 240 |
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BAR64-04,-05,-06 |
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≤ 340 |
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_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group |
1 |
Edition A01, 23.02.95 |
BAR 64...
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC characteristics per diode
Breakdown voltage
IR = 5 μA
Forward voltage
IF = 50 mA
Diode capacitance
VR = 20 V, f = 1 MHz
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 100 mA, f = 100 MHz
Charge carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
Forward current rF= f (TS;TA*)
* mounted on alumina BAR64
mA
TS
IF
TA
TS TA
Semiconductor Group
Symbol |
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Value |
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Unit |
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min. |
typ. |
max. |
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V(BR) |
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V |
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200 |
- |
- |
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VF |
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V |
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- |
- |
1.1 |
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CT |
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pF |
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- |
0.23 |
0.35 |
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rf |
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Ω |
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- |
12.5 |
20 |
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-- |
2.1 |
3.8 |
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0.85 |
1.35 |
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τL |
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μs |
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- |
1.55 |
- |
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Ls |
- |
1.4 |
- |
nH |
Forward current rF= f (TS;TA*)
per each diode |
BAR64-05,-05,-06 |
mA
TS
I F
TA
TS TA
2 |
Edition A01, 23.02.95 |
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