BAT17-04
Semiconductor Group 1 03.96
Type Ordering Code Pin Configuration Marking Package
(tape and reel) 1 2 3
BAT 17
BAT 17-04
BAT 17-05
BAT 17-06
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
A
A
A
C
–
C
A
C
C
C/A
C/C
A/A
53
54
55
56
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage
V
R
4V
Forward current
I
F
130 mA
Total power dissipation
T
S
≤ 60 °C
P
tot
150 mW
Junction temperature
T
j
150 °C
Operating temperature range
T
op
–55…+150 °C
Storage temperature range
T
stg
– 55 … + 150 °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 750 K/W
Junction-soldering point
R
th JS
≤ 590 K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Silicon Schottky Diode
BAT 17…
● For mixer applications in the VHF/UHF range
● For high-speed switching
BAT 17…
Semiconductor Group 2
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
R
=10µA
V
(BR)
4––
V
Reverse current
V
R
=3V
V
R
=3V,T
A
=60°C
V
R
=4V
I
R
–
–
–
–
–
–
0.25
1.25
10
µA
Forward voltage
I
F
= 0.1 mA
I
F
=1mA
I
F
=10mA
V
F
200
250
350
275
340
425
350
450
600
mV
Diode capacitance
V
R
=0V f= 1 MHz
C
T
0.4 0.55 0.75
pF
Differential forward resistance
I
F
= 5 mA, f =10kHz
r
S
–815
Ω
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