December 1994
LM113/LM313 Reference Diode
General Description
The LM113/LM313 are temperature compensated, low voltage reference diodes. They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability.
The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances.
YDynamic impedance of 0.3X from 500 mA to 20 mA
YTemperature stability typically 1% overb55§C to 125§C range (LM113), 0§C to 70§C (LM313)
YTight tolerance: g5%, g2% or g1%
The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of siliconÐthe ener- gy-band gap voltageÐmakes it useful for many tempera- ture-compensation and temperature-measurement functions.
Features
Y Low breakdown voltage: 1.220V
Schematic and Connection Diagrams
H02A
TL/H/5713 ± 1
Typical Applications
Low Voltage Regulator
²Solid tantalum.
TL/H/5713 ± 2
Diode Reference LM113/LM313
C1995 National Semiconductor Corporation |
TL/H/5713 |
RRD-B30M115/Printed in U. S. A. |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
(Note 3)
Power Dissipation (Note 1) |
100 mW |
Reverse Current |
50 mA |
Forward Current |
50 mA |
Electrical Characteristics (Note 2)
Storage Temperature Range |
b65§C to a150§C |
Lead Temperature |
300§C |
(Soldering, 10 seconds) |
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Operating Temperature Range |
b55§C toa125§C |
LM113 |
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LM313 |
0§C to a70§C |
Parameter |
Conditions |
Min |
Typ |
Max |
Units |
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Reverse Breakdown Voltage |
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LM113/LM313 |
IR e 1 mA |
1.160 |
1.220 |
1.280 |
V |
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LM113-1 |
1.210 |
1.22 |
1.232 |
V |
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LM113-2 |
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1.195 |
1.22 |
1.245 |
V |
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Reverse Breakdown Voltage |
0.5 mA s IR s 20 mA |
|
6.0 |
15 |
mV |
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Change |
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Reverse Dynamic Impedance |
IR e 1 mA |
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0.2 |
1.0 |
X |
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IR e 10 mA |
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0.25 |
0.8 |
X |
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Forward Voltage Drop |
IF e 1.0 mA |
|
0.67 |
1.0 |
V |
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RMS Noise Voltage |
10 Hz s f s 10 kHz |
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5 |
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mV |
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IR e 1 mA |
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Reverse Breakdown Voltage |
0.5 mA s IR s 10 mA |
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15 |
mV |
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Change with Current |
TMIN s TA s TMAX |
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Breakdown Voltage Temperature |
1.0 mA s IR s 10 mA |
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0.01 |
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%/§C |
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Coefficient |
TMIN s TA s TMAX |
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Note 1: For operating at elevated temperatures, the device must be derated based on a 150§C maximum junction and a thermal resistance of 80§C/W junction to case or 440§C/W junction to ambient.
Note 2: These specifications apply for TA e 25§C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4 inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at least a 100X resistor, as it may oscillate at some currents.
Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
Typical Performance Characteristics
Temperature Drift |
Reverse Dynamic Impedance |
Reverse Characteristics |
TL/H/5713 ± 3
2
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