Motorola MCM6343YJ12R, MCM6343YJ15, MCM6343YJ15R, MCM6343TS15, MCM6343YJ12 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCM6343/D

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256K x 16 Bit 3.3 V Asynchronous

Fast Static RAM

The MCM6343 is a 4,194,304±bit static random access memory organized as 262,144 words of 16 bits. Static design eliminates the need for external clocks or timing strobes.

The MCM6343 is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for greater system flexibility and eliminating bus contention problems. Separate byte enable controls (LB and UB) allow individual bytes to be written and read. LB controls the lower bits DQ0 to DQ7, while UB controls the upper bits DQ8 to DQ15.

The MCM6343 is available in a 400 mil, 44±lead small±outline SOJ package and a 44±lead TSOP Type II package.

•Single 3.3 V ± 0.3 V Power Supply

•Fast Access Time: 12/15 ns

•Equal Address and Chip Enable Access Time

•All Inputs and Outputs are TTL Compatible

•Data Byte Control

•Fully Static Operation

•Power Operation: 250/240/230 mA Maximum, Active AC

•Commercial and Standard Industrial Temperature Option: ± 40 to + 85°C

	BLOCK DIAGRAM
G OUTPUT	HIGH BYTE OUTPUT ENABLE
ENABLE
BUFFER	LOW BYTE OUTPUT ENABLE

			9			8	HIGH	8
A	ADDRESS						BYTE
18	BUFFERS	9	ROW	COLUMN			OUTPUT
			DECODER	DECODER			BUFFER
						8	HIGH	8
E	CHIP						BYTE
							WRITE
	ENABLE
							DRIVER
	BUFFER
						SENSE
			256K x 16		16
						AMPS
			BIT
	WRITE						LOW
W			MEMORY			8		8
	ENABLE		ARRAY				BYTE
	BUFFER						OUTPUT
							BUFFER
						8	LOW	8
							BYTE
LB	BYTE						WRITE
							DRIVER
UB	ENABLE			HIGH BYTE WRITE ENABLE
	BUFFER

LOW BYTE WRITE ENABLE

MCM6343

YJ PACKAGE 400 MIL SOJ CASE 919±01

TS PACKAGE

TSOP TYPE II

CASE 924A±02

PIN ASSIGNMENT

	A			1	44		A
	A			2	43		A
	A			3	42		A
	A			4	41		G
	A			5	40
								UB
E				6	39		LB
DQ0				7	38		DQ15
DQ1				8	37		DQ14
DQ2				9	36		DQ13
DQ3				10	35		DQ12
VDD				11	34		VSS
VSS				12	33			VDD
DQ4				13	32			DQ11
DQ5				14	31			DQ10
DQ6				15	30			DQ9
DQ7				16	29			DQ8
W				17	28			NC
A				18	27			A
A				19	26			A
A				20	25			A
A				21	24			A
A				22	23			A

PIN NAMES

A0 ± A17 . . . . . . . . . . . . . . . . . Address Input

E . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable

W . . . . . . . . . . . . . . . . . . . . . . . Write Enable

G . . . . . . . . . . . . . . . . . . . . . . Output Enable

UB . . . . . . . . . . . . . . . . . . . . . . . . Upper Byte

LB . . . . . . . . . . . . . . . . . . . . . . . . . Lower Byte

DQ0 ± DQ15 . . . . . . . . . . Data Input/Output

VDD . . . . . . . . . . . . . . + 3.3 V Power Supply

VSS . . . . . . . . . . . . . . . . . . . . . . . . . . Ground

NC . . . . . . . . . . . . . . . . . . . . . No Connection

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 2 2/10/98

Motorola, Inc. 1998	MCM6343
MOTOROLA FAST SRAM
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TRUTH TABLE (X = Don't Care)

E	G	W	LB	UB	Mode	VDD Current	DQ0 ± DQ7	DQ8 ± DQ15
H	X	X	X	X	Not Selected	ISB1, ISB2	High±Z	High±Z
L	H	H	X	X	Output Disabled	IDDA	High±Z	High±Z
L	X	X	H	H	Output Disabled	IDDA	High±Z	High±Z
L	L	H	L	H	Low Byte Read	IDDA	Dout	High±Z
L	L	H	H	L	High Byte Read	IDDA	High±Z	Dout
L	L	H	L	L	Word Read	IDDA	Dout	Dout
L	X	L	L	H	Low Byte Write	IDDA	Din	High±Z
L	X	L	H	L	High Byte Write	IDDA	High±Z	Din
L	X	L	L	L	Word Write	IDDA	Din	Din

ABSOLUTE MAXIMUM RATINGS (See Notes)

Rating		Symbol	Value		Unit
Supply Voltage		VDD	± 0.5 to +	4.6	V
Voltage on Any Pin		Vin	± 0.5 to VDD + 0.5		V
Output Current per Pin		Iout	± 20		mA
Package Power Dissipation		PD	TBD		W
Temperature Under Bias	Commercial	Tbias	± 10 to +	85	°C
	Industrial		± 45 to +	90
Operating Temperature	Commercial	TA	0 to + 70		°C
	Industrial		± 45 to +	85
Storage Temperature		Tstg	± 55 to + 150		°C
NOTES:

1.Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

2.All voltages are referenced to VSS.

3.Power dissipation capability will be dependent upon package characteristics and use environment.

This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high±impedance circuits.

This CMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained.

MCM6343	MOTOROLA FAST SRAM
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DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ± 0.3 V, TA = 0 to 70°C, Unless Otherwise Noted) (TA = ± 40 to + 85°C for Industrial Temperature Offering)

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Typ	Max	Unit
Power Supply Voltage	VDD	3.0	3.3	3.6	V
Input High Voltage	VIH	2.2	Ð	VDD + 0.3**	V
Input Low Voltage	VIL	± 0.5*	Ð	0.8	V

*VIL (min) = ± 0.5 V dc; VIL (min) = ± 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.

**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS

		Parameter		Symbol	Min	Max	Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)				Ilkg(I)	Ð	± 1.0	μA
Output Leakage Current (E = VIH, Vout = 0 to VDD)				Ilkg(O)	Ð	± 1.0	μA
Output Low Voltage			(IOL = + 4.0 mA)	VOL	Ð	0.4	V
			(IOL = + 100 μA)			VSS + 0.2
Output High Voltage			(IOH = ± 4.0 mA)	VOH	2.4	Ð	V
			(IOH = ± 100 μA)		VDD ± 0.2

POWER SUPPLY CURRENTS

					± 40 to
Parameter		Symbol		0 to 70°C	+ 85°C	Unit
AC Active Supply Current	MCM6343±12: tAVAV = 12 ns	ICC		240	240	mA
(Iout = 0 mA, VCC = max)	MCM6343±15: tAVAV = 15 ns			230
AC Standby Current (VCC = max, E = VIH,	MCM6343±12: tAVAV = 12 ns	ISB1		50	55	mA
No other restrictions on other inputs)	MCM6343±15: tAVAV = 15 ns			45	50
CMOS Standby Current (E ≥ VCC ± 0.2 V, Vin ≤ VSS + 0.2 V or ≥ VCC ± 0.2 V)		ISB2		5	5	mA
(VCC = max, f = 0 MHz)
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter		Symbol		Typ	Max	Unit
Address Input Capacitance		Cin		Ð	6	pF
Control Input Capacitance		Cin		Ð	6	pF
Input/Output Capacitance		CI/O		Ð	8	pF

MOTOROLA FAST SRAM	MCM6343
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