MC74VHC125
Quad Bus Buffer with 3±State Control Inputs
The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The MC74VHC125 requires the 3±state control input (OE) to be set High to place the output into the high impedance state.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
•High Speed: tPD = 3.8ns (Typ) at VCC = 5V
•Low Power Dissipation: ICC = 4μA (Max) at TA = 25°C
•High Noise Immunity: VNIH = VNIL = 28% VCC
•Power Down Protection Provided on Inputs
•Balanced Propagation Delays
•Designed for 2V to 5.5V Operating Range
•Low Noise: VOLP = 0.8V (Max)
•Pin and Function Compatible with Other Standard Logic Families
•Latchup Performance Exceeds 300mA
•ESD Performance: HBM > 2000V; Machine Model > 200V
•Chip Complexity: 72 FETs or 18 Equivalent Gates
LOGIC DIAGRAM
Active±Low Output Enables
A1 |
2 |
3 |
Y1 |
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OE1 |
1 |
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A2 |
5 |
6 |
Y2 |
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OE2 |
4 |
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A3 |
9 |
8 |
Y3 |
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OE3 |
10 |
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A4 |
12 |
11 |
Y4 |
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OE4 |
13 |
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FUNCTION TABLE
VHC125
Inputs |
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Output |
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A |
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Y |
OE |
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H |
L |
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H |
L |
L |
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L |
X |
H |
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Z |
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14±LEAD SOIC |
14±LEAD TSSOP |
D SUFFIX |
DT SUFFIX |
CASE 751A |
CASE 948G |
14±LEAD SOIC EIAJ
M SUFFIX
CASE 965
PIN CONNECTION AND
MARKING DIAGRAM (Top View)
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1 |
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OE1 |
14 |
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VCC |
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A1 |
2 |
13 |
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OE4 |
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Y1 |
3 |
12 |
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A4 |
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4 |
11 |
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Y4 |
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OE2 |
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A2 |
5 |
10 |
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OE3 |
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Y2 |
6 |
9 |
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A3 |
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GND |
7 |
8 |
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Y3 |
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For detailed package marking information, see the Marking Diagram section on page 5 of this data sheet.
ORDERING INFORMATION
Device |
Package |
Shipping |
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MC74VHC125D |
SOIC |
55 Units/Rail |
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MC74VHC125DT |
TSSOP |
96 Units/Rail |
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MC74VHC125M |
SOIC EIAJ |
50 Units/Rail |
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Semiconductor Components Industries, LLC, 2000 |
1 |
Publication Order Number: |
April, 2000 ± Rev. 2 |
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MC74VHC125/D |
MC74VHC125
MAXIMUM RATINGS*
Symbol |
Parameter |
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Value |
Unit |
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VCC |
DC Supply Voltage |
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± 0.5 to + 7.0 |
V |
Vin |
DC Input Voltage |
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± 0.5 to + 7.0 |
V |
Vout |
DC Output Voltage |
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± 0.5 to VCC + 0.5 |
V |
IIK |
Input Diode Current |
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± 20 |
mA |
IOK |
Output Diode Current |
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± 20 |
mA |
Iout |
DC Output Current, per Pin |
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± 25 |
mA |
ICC |
DC Supply Current, VCC and GND Pins |
± 50 |
mA |
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PD |
Power Dissipation in Still Air, |
SOIC Packages² |
500 |
mW |
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TSSOP Package² |
450 |
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Tstg |
Storage Temperature |
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± 65 to + 150 |
_C |
*Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute±maximum±rated conditions is not implied.
²Derating Ð SOIC Packages: ± 7 mW/ _C from 65_ to 125_C TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
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Min |
Max |
Unit |
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VCC |
DC Supply Voltage |
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2.0 |
5.5 |
V |
Vin |
DC Input Voltage |
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0 |
5.5 |
V |
Vout |
DC Output Voltage |
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0 |
VCC |
V |
TA |
Operating Temperature, All Package Types |
± 40 |
+ 85 |
_C |
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tr, tf |
Input Rise and Fall Time |
VCC = 3.3V ±0.3V |
0 |
100 |
ns/V |
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VCC =5.0V ±0.5V |
0 |
20 |
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DC ELECTRICAL CHARACTERISTICS
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the
range GND v (Vin or Vout) v VCC. Unused inputs must always be
tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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VCC |
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TA = 25°C |
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TA ≤ 85°C |
TA ≤ 125°C |
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Symbol |
Parameter |
Test Conditions |
(V) |
Min |
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Typ |
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Max |
Min |
Max |
Min |
Max |
Unit |
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VIH |
Minimum High±Level |
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2.0 |
1.5 |
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1.5 |
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1.5 |
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V |
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Input Voltage |
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3.0 |
2.1 |
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2.1 |
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2.1 |
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4.5 |
3.15 |
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3.15 |
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3.15 |
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5.5 |
3.85 |
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3.85 |
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3.85 |
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VIL |
Maximum Low±Level |
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2.0 |
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0.5 |
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0.5 |
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0.5 |
V |
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Input Voltage |
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3.0 |
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0.9 |
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0.9 |
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0.9 |
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4.5 |
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1.35 |
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1.35 |
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1.35 |
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5.5 |
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1.65 |
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1.65 |
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1.65 |
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VOH |
Minimum High±Level |
VIN = VIH or VIL |
2.0 |
1.9 |
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2.0 |
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1.9 |
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1.9 |
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V |
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Output Voltage |
IOH = ±50μA |
3.0 |
2.9 |
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3.0 |
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2.9 |
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2.9 |
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VIN = VIH or VIL |
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4.5 |
4.4 |
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4.5 |
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4.4 |
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4.4 |
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VIN = VIH or VIL |
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V |
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IOH = ±4mA |
3.0 |
2.58 |
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2.48 |
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2.34 |
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IOH = ±8mA |
4.5 |
3.94 |
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3.80 |
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3.66 |
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VOL |
Maximum Low±Level |
VIN = VIH or VIL |
2.0 |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
V |
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Output Voltage |
IOL = 50μA |
3.0 |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
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VIN = VIH or VIL |
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4.5 |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
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VIN = VIH or VIL |
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V |
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IOL = 4mA |
3.0 |
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0.36 |
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0.44 |
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0.52 |
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IOL = 8mA |
4.5 |
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0.36 |
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0.44 |
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0.52 |
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IOZ |
Maximum 3±State |
VIN = VIH or VIL |
5.5 |
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±0.25 |
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±2.5 |
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±2.5 |
μA |
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Leakage Current |
VOUT = VCC or GND |
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2
MC74VHC125
IIN |
Maximum Input |
VIN = 5.5V or GND |
0 to |
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±0.1 |
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±1.0 |
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±1.0 |
μA |
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Leakage Current |
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5.5 |
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ICC |
Maximum Quiescent |
VIN = VCC or GND |
5.5 |
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4.0 |
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40 |
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40 |
μA |
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Supply Current |
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
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TA = 25°C |
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TA = ≤ 85°C |
TA = ≤ 125°C |
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Symbol |
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Parameter |
Test Conditions |
Min |
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Typ |
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Max |
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Min |
Max |
Min |
Max |
Unit |
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tPLH, |
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Maximum Propagation |
VCC = 3.3 ± 0.3V |
CL = 15pF |
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5.6 |
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8.0 |
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1.0 |
9.5 |
1.0 |
12.0 |
ns |
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tPHL |
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Delay, |
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CL = 50pF |
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8.1 |
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11.5 |
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1.0 |
13.0 |
1.0 |
16.0 |
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A to Y |
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VCC = 5.0 ± 0.5V |
CL = 15pF |
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3.8 |
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5.5 |
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1.0 |
6.5 |
1.0 |
8.5 |
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CL = 50pF |
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5.3 |
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7.5 |
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1.0 |
8.5 |
1.0 |
10.5 |
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tPZL, |
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Maximum Output Enable |
VCC = 3.3 ± 0.3V |
CL = 15pF |
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5.4 |
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8.0 |
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1.0 |
9.5 |
1.0 |
11.5 |
ns |
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tPZH |
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TIme, |
RL = 1kΩ |
CL = 50pF |
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7.9 |
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11.5 |
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1.0 |
13.0 |
1.0 |
15.0 |
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OE |
to Y |
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VCC = 5.0 ± 0.5V |
CL = 15pF |
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3.6 |
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5.1 |
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1.0 |
6.0 |
1.0 |
7.5 |
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RL = 1kΩ |
CL = 50pF |
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5.1 |
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7.1 |
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1.0 |
8.0 |
1.0 |
9.5 |
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tPLZ, |
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Maximum Output |
VCC = 3.3 ± 0.3V |
CL = 50pF |
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9.5 |
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13.2 |
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1.0 |
15.0 |
1.0 |
18.0 |
ns |
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tPHZ |
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Disable Time, |
RL = 1kΩ |
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OE |
to Y |
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VCC = 5.0 ± 0.5V |
CL = 50pF |
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6.1 |
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8.8 |
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1.0 |
10.0 |
1.0 |
12.0 |
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RL = 1kΩ |
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tOSLH, |
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Output±to±Output Skew |
VCC = 3.3 ± 0.3V |
CL = 50pF |
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1.5 |
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1.5 |
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1.5 |
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ns |
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tOSHL |
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(Note 1.) |
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VCC = 5.0 ± 0.5V |
CL = 50pF |
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1.0 |
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1.0 |
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1.0 |
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(Note 1.) |
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Cin |
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Maximum Input |
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4 |
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10 |
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10 |
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10 |
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pF |
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Capacitance |
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Cout |
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Maximum Three±State |
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6 |
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pF |
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Output Capacitance |
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(Output in High |
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Impedance State) |
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Typical @ 25°C, VCC = 5.0V |
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CPD |
Power Dissipation Capacitance (Note 2.) |
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14 |
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pF |
1.Parameter guaranteed by design. tOSLH = |tPLHm ± tPLHn|, tOSHL = |tPHLm ± tPHLn|.
2.CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the no±load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
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TA = 25°C |
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Symbol |
Characteristic |
Typ |
Max |
Unit |
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VOLP |
Quiet Output Maximum Dynamic VOL |
0.3 |
0.8 |
V |
VOLV |
Quiet Output Minimum Dynamic VOL |
± 0.3 |
± 0.8 |
V |
VIHD |
Minimum High Level Dynamic Input Voltage |
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3.5 |
V |
VILD |
Maximum Low Level Dynamic Input Voltage |
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1.5 |
V |
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