Analog Devices MAT01AH, MAT01GH Datasheet

a		Matched Monolithic
		Dual Transistor
		MAT01

FEATURES

Low VOS (VBE Match): 40 V typ, 100 V max Low TCVOS: 0.5 V/ C max

High hFE: 500 min

Excellent hFE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz

High Breakdown: 45 V min

PRODUCT DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 V, temperature drift of 0.15 V/°C, and hFE matching of 0.7%. Very high hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.

PIN CONNECTION

TO-78

(H Suffix)

NOTE: Substrate is connected to case.

BURN-IN CIRCUIT

REV. B

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MAT01–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VCB = 15 V, IC = 10 A, TA = 25 C, unless otherwise noted.)

					MAT01AH			MAT01GH
Parameter	Symbol	Conditions		Min	Typ	Max	Min	Typ	Min	Unit
Breakdown Voltage	BVCEO	IC = 100 µA		45			45			V
Offset Voltage	VOS				0.04	0.1		0.10	0.5	mV
Offset Voltage Stability										µV/Mo
First Month	VOS/Time	(Note 1)			2.0			2.0
Long Term		(Note 2)			0.2			0.2		µV/Mo
Offset Current	IOS				0.1	0.6		0.2	3.2	nA
Bias Current	IB				13	20		18	40	nA
Current Gain	hFE	IC = 10 nA			590			430
		IC = 10 µA		500	770		250	560
		IC = 10 mA			840			610
Current Gain Match	∆hFE	IC = 10 µA			0.7	3.0		1.0	8.0	%
Low Frequency Noise		100 nA ≤ IC ≤ 10 mA			0.8			1.2		%
		0.1 Hz to 10 Hz3								µV p-p
Voltage	en p-p				0.23	0.4		0.23	0.4
Broadband Noise										µV rms
Voltage	en rms	1 Hz to 10 kHz			0.60			0.60
Noise Voltage		fO = 10 Hz3								nV/√Hz
Density	en				7.0	9.0		7.0	9.0
		fO = 100 Hz3			6.1	7.6		6.1	7.6	nV/√Hz
		fO = 1000 Hz3			6.0	7.5		6.0	7.5	nV/√Hz
Offset Voltage Change	∆VOS/∆VCB	0 ≤ VCB	≤ 30 V		0.5	3.0		0.8	8.0	µV/V
Offset Current Change	∆IOS/∆VCB	0 ≤ VCB	≤ 30 V		2	15		3	70	pA/V
Collector-Base		VCB = 30 V, IE = 04
Leakage Current	ICBO				15	50		25	200	pA
Collector-Emitter		VCE = 30 V, VBE = 04, 5
Leakage Current	ICES				50	200		90	400	pA
Collector-Collector		VCC = 30 V5
Leakage Current	ICC				20	200		30	400	pA
Collector Saturation	VCE(SAT)	IB = 0.1 mA, IC = 1 mA			0.12	0.20		0.12	0.25	V
Voltage		IB = 1 mA, IC = 10 mA			0.8			0.8		V
Gain-Bandwidth Product	fT	VCE = 10 V, IC = 10 mA			450			450		MHz
Output Capacitance	COB	VCB = 15 V, IE = 0			2.8			2.8		pF
Collector-Collector
Capacitance	CCC	VCC = 0			8.5			8.5		pF

ELECTRICAL CHARACTERISTICS (@ VCB = 15 V, IC = 10 A, –55 C ≤ TA ≤ +125 C, unless otherwise noted.)

				MAT01AH			MAT01GH
Parameter	Symbol	Conditions	Min	Typ	Max	Min	Typ	Min	Unit
Offset Voltage	VOS			0.06	0.15		0.14	0.70	mV
Average Offset									µV/°C
Voltage Drift	TCVOS	(Note 6)		0.15	0.50		0.35	1.8
Offset Current	IOS			0.9	8.0		1.5	15.0	nA
Average Offset									pA/°C
Current Drift	TCIOS	(Note 7)		10	90		15	150
Bias Current	ΙΒ			28	60		36	130	nA
Current Gain	hFE	TA = 125°C, VCB = 30 V,	167	400		77	300
Collector-Base	ICBO
Leakage Current		IE = 04		15	80		25	200	nA
Collector-Emitter	ICES	TA = 125°C, VCE = 30 V,
Leakage Current		VBE = 04, 6		50	300		90	400	nA
Collector-Collector	ICC	TA = 125°C, VCC = 30 V,
Leakage Current		(Note 6)		30	200		50	400	nA

–2–

REV. B

					MAT01
TYPICAL ELECTRICAL CHARACTERISTICS (@ VCB = 15 V and IC = 10 A, TA = +25 C, unless otherwise noted.)
				MAT01N
Parameter	Symbol	Conditions		Typical	Unit
Average Offset Voltage Drift	TCVOS			0.35	V/°C
Average Offset Current Drift	TCIOS			15	pA/°C
Collector-Emitter-Leakage
Current	ICES	VCE = 30	V, VBE = 0	90	pA
Collector-Base-Leakage
Current	ICBO	VCB = 30	V, IE = 0	25	pA
Gain Bandwidth Product	fT	VCE = 10	V, IC = 10 mA	450	MHz
Offset Voltage Stability	∆VOS/T	First Month (Note 1)		2.0	V/Mo
		Long-Term (Note 2)		0.2	V/Mo

NOTES

1Exclude first hour of operation to allow for stabilization.

2Parameter describes long-term average drift after first month of operation. 3Sample tested.

4The collector-base (ICBO) and collector-emitter (ICES) leakage currents may be reduced by a factor of two to ten times by connecting the substrate (package) to a potential which is lower than either collector voltage.

5ICC and ICES are guaranteed by measurement of ICBO.

6Guaranteed by VOS test (TCVOS VOS for VOS VBE) T = 298°K for TA = 25°C.

T

7Guaranteed by IOS test limits over temperature.

Specifications subject to change without notice.

REV. B

–3–