Fairchild Semiconductor FGH30N6S2, FGB30N6S2, FGP30N6S2 Datasheet

August 2003

FGH30N6S2 / FGP30N6S2 / FGB30N6S2

600V, SMPS II Series N-Channel IGBT

General Description

The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:

•Power Factor Correction (PFC) circuits

•Full bridge topologies

•Half bridge topologies

•Push-Pull circuits

•Uninterruptible power supplies

•Zero voltage and zero current switching circuits

Formerly Developmental Type TA49367.

Features

•100kHz Operation at 390V, 14A

•200kHZ Operation at 390V, 9A

•600V Switching SOA Capability

•	Typical Fall Time. . . . . . . . . . .	90ns at TJ = 125oC
•	Low Gate Charge . . . . . . . . .	23nC at VGE = 15V
•	Low Plateau Voltage . . . . . . .	. . . . . .6.5V Typical
•	UIS Rated . . . . . . . . . . . . . . .	. . . . . . . . . . 150mJ
•	Low Conduction Loss

Package

Symbol

C

TO-247

E

C

TO-220AB

E

G

C

TO-263AB

G

G

G

E

E

COLLECTOR

COLLECTOR

(Back-Metal)

(Flange)

Device Maximum Ratings TC= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

BVCES

Collector to Emitter Breakdown Voltage

600

V

IC25

Collector Current Continuous, TC = 25°C

45

A

IC110

Collector Current Continuous, TC = 110°C

20

A

ICM

Collector Current Pulsed (Note 1)

108

A

VGES

Gate to Emitter Voltage Continuous

±20

V

VGEM

Gate to Emitter Voltage Pulsed

±30

V

SSOA

Switching Safe Operating Area at TJ = 150°C, Figure 2

60A at 600V

EAS

Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V

150

mJ

PD

Power Dissipation Total TC = 25°C

167

W

Power Dissipation Derating TC > 25°C

1.33

W/°C

TJ

Operating Junction Temperature Range

-55 to 150

°C

TSTG

Storage Junction Temperature Range

-55 to 150

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

FGB30N6S2 / FGP30N6S2 / FGH30N6S2

©2003 Fairchild Semiconductor Corporation

FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

Package Marking and Ordering Information

Device Marking	Device	Package	Reel Size	Tape Width	Quantity
30N6S2	FGH30N6S2	TO-247	Tube	N/A	30 Units
30N6S2	FGP30N6S2	TO-220AB	Tube	N/A	50 Units
30N6S2	FGB30N6S2	TO-263AB	Tube	N/A	50 Units
30N6S2	FGB30N6S2T	TO-263AB	330mm	24mm	800 Units

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BVCES	Collector to Emitter Breakdown Voltage	IC = 250µ A, VGE = 0		600	-	-	V
BVECS	Emitter to Collector Breakdown Voltage	IC = -10mA, VGE = 0		20	-	-	V
ICES	Collector to Emitter Leakage Current	VCE = 600V	TJ = 25°C	-	-	100	µ A
			TJ = 125°C	-	-	2	mA
IGES	Gate to Emitter Leakage Current	VGE = ± 20V		-	-	±250	nA

On State Characteristics

VCE(SAT)	Collector to Emitter Saturation Voltage	IC = 12A,	TJ	= 25°C	-	2.0	2.5	V
		VGE = 15V	T	= 125°C	-	1.7	2.0	V
			J

Dynamic Characteristics

QG(ON)	Gate Charge	IC = 12A,	VGE = 15V		-	23	29	nC
		VCE = 300V	V	= 20V	-	26	33	nC
			GE
VGE(TH)	Gate to Emitter Threshold Voltage	IC = 250µ A, VCE = 600V			3.5	4.3	5.0	V
VGEP	Gate to Emitter Plateau Voltage	IC = 12A, VCE = 300V			-	6.5	8.0	V

Switching Characteristics

	SSOA	Switching SOA	TJ = 150°C, RG = 10Ω, VGE =	60	-	-	A
			15V, L = 100µ H, VCE = 600V
	td(ON)I	Current Turn-On Delay Time	IGBT and Diode at TJ = 25°C,	-	6	-	ns
	t	Current Rise Time	ICE = 12A,	-	10	-	ns
	rI		VCE = 390V,
	td(OFF)I	Current Turn-Off Delay Time		-	40	-	ns
			VGE = 15V,
	tfI	Current Fall Time		-	53	-	ns
			RG = 10Ω
	EON1	Turn-On Energy (Note 2)		-	55	-	µ J
			L = 200µ H
	EON2	Turn-On Energy (Note 2)	Test Circuit - Figure 20	-	110	-	µ J
	EOFF	Turn-Off Energy (Note 3)		-	100	150	µ J
	td(ON)I	Current Turn-On Delay Time	IGBT and Diode at TJ = 125°C	-	11	-	ns
	t	Current Rise Time	ICE = 12A,	-	17	-	ns
	rI		VCE = 390V,
	td(OFF)I	Current Turn-Off Delay Time		-	73	100	ns
			VGE = 15V,
	tfI	Current Fall Time		-	90	100	ns
			RG = 10Ω
	EON1	Turn-On Energy (Note 2)		-	55	-	µ J
			L = 200µ H
	EON2	Turn-On Energy (Note 2)	Test Circuit - Figure 20	-	160	200	µ J
	EOFF	Turn-Off Energy (Note 3)		-	250	350	µ J

Thermal Characteristics

Rθ JC

Thermal Resistance Junction-Case

-

-

0.75

°C/W

NOTE:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss

of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20.

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

FGS30N6S2 / FGP30N6S2 / FGH30N6S2

©2003 Fairchild Semiconductor Corporation

FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1

Typical Performance Curves

	50
(A)
CURRENT	40
	30
DC COLLECTOR
	20
	10
,
CE
I
	0
	25	50	75	100	125	150
			T , CASE TEMPERATURE (oC)
			C

Figure 1. DC Collector Current vs Case

		Temperature
(kHz)	1000
			TC
			o
FREQUENCY			75 C
		fMAX1 = 0.05 / (td(OFF)I + td(ON)I)	VGE = 15V
		VGE = 10V
OPERATING,	100	fMAX2 = (PD - PC) / (EON2 + EOFF)
		PC = CONDUCTION DISSIPATION
		(DUTY FACTOR = 50%)
		RØJC = 0.49oC/W, SEE NOTES
MAX		TJ = 125oC, RG = 3Ω , L = 200µ H, VCE = 390V
f

10

1	10	20	30
	ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 3. Operating Frequency vs Collector to Emitter Current

(A)	18
CURRENT
	16	DUTY CYCLE < 0.5%, VGE = 10V
		PULSE DURATION = 250µ s
	14
EMITTER	12
	10
TO	8
, COLLECTOR	6				= 150oC					= 125oC
				T				T	J
	4			J
	2						TJ = 25oC
CE	0
I			0.75	1.00	1.25	1.50	1.75	2.00			2.25
	0.50

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage

	(A)	70	TJ = 150oC, RG = 10Ω , VGE = 15V, L = 100µ H
	CURRENT
		60
		50
	EMITTER	40
	TO	30
	, COLLECTOR	20
		10
		0
	CE
		0	100	200	300	400	500	600	700
	I
				VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 2. Minimum Switching Safe Operating Area

	( s)	12							350	(A)
				VCE = 390V, RG = 10Ω , TJ = 125oC
	CIRCUIT WITHSTAND TIME	10							300	SHORT CIRCUIT CURRENT
		8							250
					tSC			ISC
		6							200
		4							150
	SHORT	2							100	, PEAK
	,	9	10	11	12	13	14	15	16	SC
	SC									I
	t

VGE, GATE TO EMITTER VOLTAGE (V)

Figure 4. Short Circuit Withstand Time

(A)	18
CURRENT
	16	DUTY CYCLE < 0.5%, VGE =15V
		PULSE DURATION = 250µ s
	14
EMITTER	12
	10
TO	8
COLLECTOR	6			TJ = 150oC				= 125oC
						T
	4					J
	2					TJ = 25oC
,
CE	0
I		.75	1	1.25	1.50	1.75	2.0		2.25
	.5
			VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector to Emitter On-State Voltage

FGS30N6S2 / FGP30N6S2 / FGH30N6S2

©2003 Fairchild Semiconductor Corporation

FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1