Fairchild Semiconductor FDP7042L, FDB7042L Datasheet

June 2000

PRELIMINARY

FDP7042L / FDB7042L

N-Channel Logic Level PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) .

Applications

•Synchronous rectifier

•DC/DC converter

Features

• 50 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 4.5 V RDS(ON) = 7.5 mΩ @ VGS = 10 V

•Critical DC electrical parameters specified at elevated temperature

•High performance trench technology for extremely

low RDS(ON)

•175°C maximum junction temperature rating

			D			D
G	G	S			G
	TO-220		TO-263AB
D S	FDP Series		FDB Series			S
Absolute Maximum Ratings		TA=25oC unless otherwise noted
Symbol	Parameter				Ratings		Units
VDSS	Drain-Source Voltage				30		V
VGSS	Gate-Source Voltage				± 12		V
ID	Drain Current – Continuous		(Note 1)		50		A
	– Pulsed		(Note 1)		150
PD	Total Power Dissipation @ TC = 25°C				83		W
	Derate above 25°C				0.48		W°C
TJ, TSTG	Operating and Storage Junction Temperature Range				-65 to +175		°C
Thermal Characteristics
RθJC	Thermal Resistance, Junction-to-Case				1.8		°C/W
RθJA	Thermal Resistance, Junction-to-Ambient				62.5		°C/W

Package Marking and Ordering Information

Device Marking	Device	Reel Size	Tape width	Quantity
FDB7042L	FDB7042L	13’’	24mm	800 units
FDP7042L	FDP7042L	Tube	n/a	45

FDB7042L / FDP7042L

2000 Fairchild Semiconductor Corporation

FDP7042L Rev B(W)

Electrical Characteristics			TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions			Min	Typ	Max	Units
Off Characteristics
BVDSS	Drain–Source Breakdown Voltage		VGS = 0 V, ID = 250 µA			30			V
∆BVDSS	Breakdown Voltage Temperature		ID = 250 µA, Referenced to 25°C				24		mV/°C
∆TJ	Coefficient
IDSS	Zero Gate Voltage Drain Current		VDS = 24 V,		VGS = 0 V			1	µA
IGSSF	Gate–Body Leakage, Forward		VGS = 12 V,		VDS = 0 V			100	nA
IGSSR	Gate–Body Leakage, Reverse		VGS = –12 V		VDS = 0 V			–100	nA
On Characteristics (Note 2)
VGS(th)	Gate Threshold Voltage		VDS = VGS, ID = 250 µA			0.8	1.2	2	V
∆VGS(th)	Gate Threshold Voltage		ID = 250 µA, Referenced to 25°C				–4.1		mV/°C
∆TJ	Temperature Coefficient
RDS(on)	Static Drain–Source On–Resistance		VGS = 4.5 V,		ID = 25A		6.2	9
			VGS = 10 V,		ID = 25A		5.5	7.5	mΩ
			VGS= 4.5 V, ID =25A, TJ=125°C				9.6	16
ID(on)	On–State Drain Current		VGS = 4.5 V,		VDS = 10 V	60			A
gFS	Forward Transconductance		VDS = 5V,		ID = 25 A		117		S
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 15 V,		V GS = 0 V,			2418		pF
Coss	Output Capacitance						549		pF
		f = 1.0 MHz
Crss	Reverse Transfer Capacitance						243		pF
Switching Characteristics (Note 2)
td(on)	Turn–On Delay Time						21	34	ns
tr	Turn–On Rise Time	VDD = 15 V,			ID = 1 A,		20	32	ns
td(off)	Turn–Off Delay Time	VGS = 4.5 V,			RGEN = 6 Ω		60	96	ns
tf	Turn–Off Fall Time						30	48	ns
Qg	Total Gate Charge	VDS = 15 V,		ID = 50 A,			32	51	nC
Qgs	Gate–Source Charge						10		nC
		VGS = 4.5 V
Qgd	Gate–Drain Charge						9		nC
Drain–Source Diode Characteristics and Maximum Ratings
IS	Maximum Continuous Drain–Source Diode Forward Current							50	A
VSD	Drain–Source Diode Forward		VGS = 0 V,		IS = 25 A (Note 2)		0.8	1.3	V
	Voltage

Notes:

1.Maximum continuous current is limited by the package.

2.Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

FDB7042L / FDP7042L

FDP7042L Rev B(W)

Typical Characteristics

150	VGS = 4.5V
120	4.0V	3.5V
90			3.0V
60
				2.5V
30
0
0	1	2	3	4	5

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

2
1.8	ID =25A
	VGS = 4.5V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50	-25	0	25	50	75	100	125	150	175
		TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation

withTemperature.

80
	VDS = 5V
60
40
		TA = 125oC	o
20			25 C
			-55oC
0
1	1.5	2	2.5	3

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2						FDP7042L
						/
1.8	VGS = 2.5V					FDB7042L
1.6
1.4		3.0V
1.2			3.5V
				4.0V
					4.5V
1
0.8
0	30	60	90	120		150
		ID, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.025
					ID = 25 A
0.02
0.015
		TA = 125oC
0.01
0.005	TA = 25oC
0
2	2.5	3	3.5	4	4.5	5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100	VGS = 0V
10
		TA = 125oC
1			25oC
0.1				-55oC
0.01
0.001
0	0.2	0.4	0.6	0.8	1	1.2	1.4
	VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDP7042L Rev B(W)