Fairchild Semiconductor FDS9435A Datasheet

May 1999

FDS9435A

Single P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

-5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used surface mount package.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

D

D

D

SO-8

D		5	4
FDS
9435A		6	3
	G	7	2
	S
pin 1	S	8	1
S

Absolute Maximum Ratings TA = 25oC unless otherwise noted

	Symbol	Parameter		FDS9435A	Units
	VDSS	Drain-Source Voltage		-30	V
	VGSS	Gate-Source Voltage		-20	V
	ID	Drain Current - Continuous	(Note 1a)	- 5.3	A
		- Pulsed		-50
	PD	Maximum Power Dissipation	(Note 1a)	2.5	W
		(Note 1b)		1.2
		(Note 1c)
				1
	TJ,TSTG	Operating and Storage Temperature Range		-55 to 150	°C
	THERMAL CHARACTERISTICS
	RθJA	Thermal Resistance, Junction-to-Ambient	(Note 1a)	50	°C/W
	RθJC	Thermal Resistance, Junction-to-Case	(Note 1)	25	°C/W
	© 1999 Fairchild Semiconductor Corporation				FDS9435A Rev.C

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol	Parameter	Conditions	Min	Typ	Max	Units
OFF CHARACTERISTICS

BVDSS			Drain-Source Breakdown Voltage	VGS = 0 V, I D = -250 µA			-30			V
BV	/	T	Breakdown Voltage Temp. Coefficient	ID = -250 µA, Referenced to 25 oC				-25		mV/ oC
DSS		J
IDSS			Zero Gate Voltage Drain Current	VDS = -24 V, VGS = 0 V					-1	µA
IGSSF			Gate - Body Leakage, Forward	VGS = 20 V, VDS = 0 V					-100	nA
IGSSR			Gate - Body Leakage, Reverse	VGS = -20 V, VDS = 0 V					-100	nA
ON CHARACTERISTICS (Note 2)
VGS(th)			Gate Threshold Voltage	VDS = VGS, ID = -250 µA			-1	-1.5	-3	V
V	/	T	Gate Threshold Voltage Temp. Coefficient	ID = -250 µA, Referenced to 25 oC				-3.2		mV/oC
GS(th)		J
RDS(ON)			Static Drain-Source On-Resistance	VGS = -10 V, I D = -5.3 A				0.035	0.045	Ω
						TJ =125°C		0.052	0.072
				VGS = -4.5 V, I D = -4.0 A				0.059	0.075
ID(ON)			On-State Drain Current	VGS = -10 V, VDS = -5 V			-25			A
gFS			Forward Transconductance	VDS = -10 V, I D = -4 A				9.5		S
DYNAMIC CHARACTERISTICS
Ciss			Input Capacitance	VDS = -15 V, VGS = 0 V,				730		pF
				f = 1.0 MHz
Coss			Output Capacitance					400		pF
Crss			Reverse Transfer Capacitance					90		pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)			Turn - On Delay Time	VDS = -10 V, I D = -1 A				11	20	ns
tr			Turn - On Rise Time	V	= -10 V , R = 6 Ω			10	18
				GS	GEN
tD(off)			Turn - Off Delay Time					90	125
tf			Turn - Off Fall Time					55	80
Qg			Total Gate Charge	VDS = -10 V, I D = -4 A,				19	27	nC
Qgs			Gate-Source Charge	VGS = -10 V				3.5
Qgd			Gate-Drain Charge					3.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS			Maximum Continuous Drain-Source Diode Forward Current						-2.1	A
VSD			Drain-Source Diode Forward Voltage	VGS = 0 V, I S = -2.1 A (Note 2)				-0.77	-1.2	V
Notes:

1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a.50OC/W on a 1 in2 pad of 2oz copper.

b.105OC/W on a 0.04 in2 pad of 2oz copper.

c.125OC/W on a 0.006 in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS9435A Rev.C

Typical Electrical Characteristics

	50	VGS= -10V
(A)
			-7.0V
CURRENT				-5.0V
	40		-6.0V
SOURCE	30
	20			-4.5V
-	10				-3.5V
DRAIN,				-4.0V
D
- I
	0
	0	2	4	6	8	10
			-VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

		1.6
	ON-RESISTANCE		ID = -5.3A
		1.4	V GS = -10V
NORMALIZED		1.2
,	SOURCE-	1
DS(ON)
		0.8
R	DRAIN
		0.6
		-50	-25	0	25	50	75	100	125	150
				T , JUNCTION TEMPERATURE (°C)
				J

Figure 3. On-Resistance Variation with Temperature.

	50	VDS = -5V	TJ = -55°C
(A)				25°C
	40			125°C
CURRENT	30
, DRAIN	20
D
- I	10
	0
	0	2	4	6	8	10

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

		3
	ON-RESISTANCE	2.5	VGS = -3.5 V
NORMALIZED			-4.0V
				-4.5V
		2			-5.0V
,	DRAINSOURCE-				-6.0V
DS(on)		1.5
						-8.0V	-10V
R		1
		0.5
		0	10	20	30	40	50
				- ID , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

	0.2				ID = -2.7A
(OHM)
	0.175
	0.15
ON-RESISTANCE
	0.125
	0.1
	0.075			TJ = 125°C
,
DS(ON)	0.05
	0.025			TJ = 25°C
R
	0	4	6	8	10
	2

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

(A)	60	VGS= 0V
	10
CURRENT
	1		TJ= 125°C
				25°C
DRAIN
	0.1
					-55°C
, REVERSE
	0.01
	0.001
S
-I
	0.0001
	0	0.2	0.4	0.6	0.8	1	1.2	1.4

-VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6 . Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS9435A Rev.C