Fairchild Semiconductor FQU5P20, FQD5P20 Datasheet

FQD5P20 / FQU5P20

FQD5P20 / FQU5P20

200V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

May 2000

QFETTM

Features

• -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V

•Low gate charge ( typical 10 nC)

•Low Crss ( typical 12 pF)

•Fast switching

•100% avalanche tested

						S
		D			!
				G!		●
						●
							▲
G	S	D-PAK		I-PAK		●
		FQD Series	G D S	FQU Series	!

D

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol		Parameter		FQD5P20 / FQU5P20	Units
VDSS	Drain-Source Voltage			-200	V
ID	Drain Current	- Continuous (TC = 25°C)		-3.7	A
		- Continuous (TC = 100°C)		-2.34	A
IDM	Drain Current	- Pulsed	(Note 1)	-14.8	A
VGSS	Gate-Source Voltage			± 30	V
EAS	Single Pulsed Avalanche Energy		(Note 2)	330	mJ
IAR	Avalanche Current		(Note 1)	-3.7	A
EAR	Repetitive Avalanche Energy		(Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt		(Note 3)	-5.5	V/ns
PD	Power Dissipation (TA = 25°C) *			2.5	W
	Power Dissipation (TC = 25°C)			45	W
		- Derate above 25°C		0.36	W/°C
TJ, TSTG	Operating and Storage Temperature Range			-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,			300	°C
	1/8" from case for 5 seconds

Thermal Characteristics

Symbol	Parameter	Typ	Max	Units
Rθ JC	Thermal Resistance, Junction-to-Case	--	2.78	°C/W
Rθ JA	Thermal Resistance, Junction-to-Ambient *	--	50	°C/W
Rθ JA	Thermal Resistance, Junction-to-Ambient	--	110	°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Rev. A, May 2000

Elerical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

	BVDSS		Drain-Source Breakdown Voltage	VGS = 0 V, ID = -250 µ A		-200	--	--	V
	∆	BVDSS	Breakdown Voltage Temperature	ID = -250 µ A, Referenced to 25°C		--	-0.17	--	V/°C
	/	∆ TJ	Coefficient
	IDSS		Zero Gate Voltage Drain Current	VDS = -200	V, VGS = 0 V	--	--	-1	µ A
				VDS = -160	V, TC = 125°C	--	--	-10	µ A
	IGSSF		Gate-Body Leakage Current, Forward	VGS = -30 V, VDS = 0 V		--	--	-100	nA
	IGSSR		Gate-Body Leakage Current, Reverse	VGS = 30 V, VDS = 0 V		--	--	100	nA

On Characteristics

VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = -250 µ A	-3.0	--	-5.0	V
RDS(on)	Static Drain-Source	VGS = -10 V, ID = -1.85 A	--	1.1	1.4	Ω
	On-Resistance
gFS	Forward Transconductance	VDS = -40 V, ID = -1.85 A (Note 4)	--	2.2	--	S

Dynamic Characteristics

	Ciss	Input Capacitance	VDS = -25 V, VGS = 0 V,	--	330	430	pF
	Coss	Output Capacitance		--	75	98	pF
			f = 1.0 MHz
	Crss	Reverse Transfer Capacitance		--	12	15	pF

Switching Characteristics

	td(on)	Turn-On Delay Time	VDD = -100 V, ID = -4.8 A,	--	9	28	ns
	tr	Turn-On Rise Time		--	70	150	ns
			RG = 25 Ω
	td(off)	Turn-Off Delay Time		--	12	35	ns
	tf	Turn-Off Fall Time	(Note 4, 5)	--	25	60	ns
	Qg	Total Gate Charge	VDS = -160 V, ID = -4.8 A,	--	10	13	nC
	Qgs	Gate-Source Charge	VGS = -10 V	--	2.8	--	nC
	Qgd	Gate-Drain Charge	(Note 4, 5)	--	5.2	--	nC

Drain-Source Diode Characteristics and Maximum Ratings

IS	Maximum Continuous Drain-Source Diode Forward Current				--	--	-3.7	A
ISM	Maximum Pulsed Drain-Source Diode Forward Current				--	--	-14.8	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0	V, IS = -3.7 A		--	--	-5.0	V
trr	Reverse Recovery Time	VGS = 0	V, IS = -4.8 A,		--	175	--	ns
Qrr	Reverse Recovery Charge	dIF / dt = 100 A/µ s		(Note 4)	--	1.07	--	µ C

Notes:

1.Repetitive Rating : Pulse width limited by maximum junction temperature

2.L = 36.2mH, IAS = -3.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3.ISD ≤ -4.8A, di/dt ≤ 300A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C

4.Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2%

5.Essentially independent of operating temperature

FQU5P20 / FQD5P20

©2000 Fairchild Semiconductor International

Rev. A, May 2000

FQD5P20 / FQU5P20

• Improved dv/dt capability

	1		VGS
	10	Top :	-15.0 V
			-10.0 V
			-8.0 V
			-7.0 V
			-6.5 V
Current [A]	100		-6.0 V
		Bottom :	-5.5 V
Drain	-1
	10
,
D
-I
			Notes :
			1. 250μs Pulse Test
			2. TC = 25

10-2

10-1	100	101
	-VDS, Drain-Source Voltage [V]	al

Characteristics

Figure 1. On-Region Characteristics

	3.0
	2.4		VGS = - 10V
			VGS = - 20V
[Ω ],	1.8
DS(on) ResistanceOn-
R Drain-Source	1.2
	0.6
				Note : TJ = 25
	0.0
	0	3	6	9	12
			-ID , Drain Current	[A]

Typic		101
	[A]
	, Drain Current	100		150
				25
	D
	-I					Notes :
					-55	1. VDS = -40V
						2. 250μs Pulse Test
		10-1	2	4	6	8	10
				-VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

101

Current [A]
DrainReverse,	100
DR			150		25		Notes :
							1. VGS = 0V
-I							2. 250μs Pulse Test
	-1
	10	0.0	0.5	1.0	1.5	2.0	2.5	3.0

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.	Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage	Variation vs. Source Current
	and Temperature

	750		Ciss = Cgs + Cgd (Cds = shorted)
			Coss = Cds + Cgd
			Crss = Cgd
	600
[pF]	450	Ciss
Capacitance		Coss
	300
			Notes :
			1. VGS = 0 V
		Crss
	150		2. f = 1 MHz
	0
	10-1	100	101
		-VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

	12
	10			VDS = -40V
[V]				VDS = -100V
	8			VDS = -160V
Voltage
	6
Gate-Source
	4
,
GS	2
-V
						Note : ID = -4.8 A
	0
	0	2	4	6	8	10	12
			QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

Rev. A, May 2000