Fairchild Semiconductor FEP16JT, FEP16HT, FEP16GT, FEP16FT, FEP16DT Datasheet

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Fairchild Semiconductor FEP16JT, FEP16HT, FEP16GT, FEP16FT, FEP16DT Datasheet

Discrete POWER & Signal

Technologies

FEP16AT - FEP16JT

Features

Low forward voltage drop.

High surge current capacity.

High current capability.

High reliability.

 

 

 

 

 

TO-220AB

 

 

 

 

 

 

 

 

 

 

 

Dimensions are in: inches (mm)

PIN 1

 

 

 

 

+

PIN 1

 

 

 

-

PIN 1

AC

 

 

 

 

 

 

 

 

 

 

 

PIN 3

CASE

PIN 3

CASE

PIN 3

CASE

 

 

 

 

 

PIN 2

Negative CT

PIN 2

Doubler

PIN 2

Positive CT

 

 

 

 

 

 

 

 

 

Suffix “A”

 

Suffix “D”

 

 

 

 

 

 

 

 

 

 

0.185(4.70)

 

 

 

 

 

 

0.412(10.5)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.175(4.44)

 

 

 

 

 

 

MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

0.154(3.91)

 

 

 

0.055(1.40)

 

 

 

 

 

 

 

 

0.045(1.14)

 

 

 

 

 

 

0.148(3.74)

0.113(2.87)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.27(6.86)

 

 

 

 

 

 

 

0.103(2.62)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.23(5.84)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.594(15.1)

0.587(14.9)

1 2 3

0.16(4.06)

0.14(3.56) 0.11(2.79)

0.10(2.54)

0.56(14.22)

0.53(13.46)

0.037(0.94)

0.027(0.68)

0.025(0.64)

0.105(2.67) 0.014(0.35)

0.095(2.41)

16 Ampere Glass Passivated Super Fast Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

 

 

 

 

IO

Average Rectified Current

16

A

 

.375 " lead length @ TA = 100°C

 

 

if(surge)

Peak Forward Surge Current

 

 

 

8.3 ms single half-sine-wave

200

A

 

Superimposed on rated load (JEDEC method)

 

 

PD

Total Device Dissipation

8.33

W

 

Derate above 25°C

66

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

15

°C/W

 

 

 

 

RθJL

Thermal Resistance, Junction to Lead

2.2

°C/W

 

 

 

 

Tstg

Storage Temperature Range

-65 to +150

°C

 

 

 

 

TJ

Operating Junction Temperature

-65 to +150

°C

 

 

 

 

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

 

 

Device

 

 

 

 

 

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16AT

16BT

 

16CT

16DT

 

16FT

 

16GT

 

16HT

 

16JT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak Repetitive Reverse Voltage

 

50

100

 

150

200

 

300

 

400

 

500

 

600

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum RMS Voltage

 

 

35

70

 

105

140

 

210

 

280

 

350

 

420

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Blocking Voltage

(Rated VR)

 

50

100

 

150

200

 

300

 

400

 

500

 

600

V

 

Maximum Reverse Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μA

 

@ rated VR

TA = 25°C

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

TA = 100°C

 

 

 

 

 

500

 

 

 

 

 

 

μA

 

Maximum Reverse Recovery Time

 

 

35

 

 

 

 

 

 

50

 

 

 

 

IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A

 

 

 

 

 

 

 

 

 

 

nS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage @ 8.0A

 

 

0.95

 

 

 

1.3

 

 

1.5

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical Junction Capacitance

 

 

 

 

85

 

 

 

 

 

 

 

60

pF

 

VR = 4.0. f = 1.0 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEP16JT - FEP16AT

ã1999 Fairchild Semiconductor Corporation

FEP16AT - FEP16JT, Rev. A

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