Discrete POWER & Signal
Technologies
FEP16AT - FEP16JT
Features
•Low forward voltage drop.
•High surge current capacity.
•High current capability.
• High reliability. |
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TO-220AB |
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Dimensions are in: inches (mm) |
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PIN 1 |
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+ |
PIN 1 |
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- |
PIN 1 |
AC |
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PIN 3 |
CASE |
PIN 3 |
CASE |
PIN 3 |
CASE |
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PIN 2 |
Negative CT |
PIN 2 |
Doubler |
PIN 2 |
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Positive CT |
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Suffix “A” |
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Suffix “D” |
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0.185(4.70) |
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0.412(10.5) |
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0.175(4.44) |
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MAX |
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0.154(3.91) |
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0.055(1.40) |
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0.045(1.14) |
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0.148(3.74) |
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0.113(2.87) |
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0.27(6.86) |
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0.103(2.62) |
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0.23(5.84) |
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0.594(15.1)
0.587(14.9)
1 2 3
0.16(4.06)
0.14(3.56) 0.11(2.79)
0.10(2.54)
0.56(14.22)
0.53(13.46)
0.037(0.94)
0.027(0.68)
0.025(0.64)
0.105(2.67) 0.014(0.35)
0.095(2.41)
16 Ampere Glass Passivated Super Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
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IO |
Average Rectified Current |
16 |
A |
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.375 " lead length @ TA = 100°C |
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if(surge) |
Peak Forward Surge Current |
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8.3 ms single half-sine-wave |
200 |
A |
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Superimposed on rated load (JEDEC method) |
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PD |
Total Device Dissipation |
8.33 |
W |
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Derate above 25°C |
66 |
mW/°C |
RθJA |
Thermal Resistance, Junction to Ambient |
15 |
°C/W |
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RθJL |
Thermal Resistance, Junction to Lead |
2.2 |
°C/W |
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Tstg |
Storage Temperature Range |
-65 to +150 |
°C |
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TJ |
Operating Junction Temperature |
-65 to +150 |
°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Device |
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Units |
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16AT |
16BT |
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16CT |
16DT |
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16FT |
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16GT |
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16HT |
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16JT |
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Peak Repetitive Reverse Voltage |
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50 |
100 |
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150 |
200 |
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300 |
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400 |
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500 |
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600 |
V |
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Maximum RMS Voltage |
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35 |
70 |
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105 |
140 |
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210 |
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280 |
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350 |
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420 |
V |
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DC Blocking Voltage |
(Rated VR) |
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50 |
100 |
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150 |
200 |
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300 |
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400 |
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500 |
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600 |
V |
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Maximum Reverse Current |
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μA |
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@ rated VR |
TA = 25°C |
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10 |
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TA = 100°C |
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500 |
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μA |
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Maximum Reverse Recovery Time |
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35 |
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50 |
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IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A |
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nS |
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Maximum Forward Voltage @ 8.0A |
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0.95 |
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1.3 |
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1.5 |
V |
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Typical Junction Capacitance |
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85 |
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60 |
pF |
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VR = 4.0. f = 1.0 MHz |
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FEP16JT - FEP16AT
ã1999 Fairchild Semiconductor Corporation |
FEP16AT - FEP16JT, Rev. A |