Fairchild Semiconductor FQPF6N60 Datasheet

FQPF6N60

FQPF6N60

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

April 2000

QFETTM

Features

• 3.6A, 600V, RDS(on) = 1.5Ω @VGS = 10 V

•Low gate charge ( typical 20 nC)

•Low Crss ( typical 10 pF)

•Fast switching

•100% avalanche tested

•Improved dv/dt capability

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	FQPF Series				S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol				Parameter		FQPF6N60	Units
VDSS	Drain-Source Voltage					600	V
ID	Drain Current			- Continuous (TC = 25°C)		3.6	A
				- Continuous (TC = 100°C)		2.3	A
IDM	Drain Current			- Pulsed	(Note 1)	14.4	A
VGSS	Gate-Source Voltage					± 30	V
EAS	Single Pulsed Avalanche Energy				(Note 2)	440	mJ
IAR	Avalanche Current				(Note 1)	3.6	A
EAR	Repetitive Avalanche Energy				(Note 1)	4.4	mJ
dv/dt	Peak Diode Recovery dv/dt				(Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C)					44	W
				- Derate above 25°C		0.35	W/°C
TJ, TSTG	Operating and Storage Temperature Range					-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,					300	°C
	1/8		from case for 5 seconds

Thermal Characteristics

Symbol	Parameter	Typ	Max	Units
Rθ JC	Thermal Resistance, Junction-to-Case	--	2.84	°C W
Rθ JA	Thermal Resistance, Junction-to-Ambient	--	62.5	°C W

©2000 Fairchild Semiconductor International

Rev. A, April 2000

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units

Off Characteristics

	BVDSS	Drain-Source Breakdown Voltage	VGS = 0 V, ID = 250 µ A		600	--	--	V
	∆ BVDSS	Breakdown Voltage Temperature	ID = 250 µ A, Referenced to 25°C		--	0.53	--	V/°C
	/ ∆ TJ	Coefficient
	IDSS	Zero Gate Voltage Drain Current	VDS = 600	V, VGS = 0 V	--	--	10	µ A
			VDS = 480	V, TC = 125°C	--	--	100	µ A
	IGSSF	Gate-Body Leakage Current, Forward	VGS = 30 V, VDS = 0 V		--	--	100	nA
	IGSSR	Gate-Body Leakage Current, Reverse	VGS = -30 V, VDS = 0 V		--	--	-100	nA

On Characteristics

VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µ A		3.0	--	5.0	V
RDS(on)	Static Drain-Source	VGS = 10 V, ID = 1.8 A		--	1.2	1.5	Ω
	On-Resistance
gFS	Forward Transconductance	VDS = 50 V, ID = 1.8 A	(Note 4)	--	4.2	--	S

Dynamic Characteristics

	Ciss	Input Capacitance	VDS = 25 V, VGS = 0 V,	--	770	1000	pF
	Coss	Output Capacitance		--	95	120	pF
			f = 1.0 MHz
	Crss	Reverse Transfer Capacitance		--	10	13	pF

Switching Characteristics

td(on)	Turn-On Delay Time	VDD = 300 V, ID = 6.2 A,		--	20	50	ns
tr	Turn-On Rise Time			--	70	150	ns
		RG = 25 Ω
td(off)	Turn-Off Delay Time			--	40	90	ns
tf	Turn-Off Fall Time		(Note 4, 5)	--	45	100	ns
Qg	Total Gate Charge	VDS = 480 V, ID = 6.2 A,		--	20	25	nC
Qgs	Gate-Source Charge			--	4.9	--	nC
		VGS = 10 V
Qgd	Gate-Drain Charge		(Note 4, 5)	--	9.4	--	nC

Drain-Source Diode Characteristics and Maximum Ratings

IS	Maximum Continuous Drain-Source Diode Forward Current				--	--	3.6	A
ISM	Maximum Pulsed Drain-Source Diode Forward Current				--	--	14.4	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0	V, IS = 3.6 A		--	--	1.4	V
trr	Reverse Recovery Time	VGS = 0	V, IS = 6.2 A,		--	290	--	ns
Qrr	Reverse Recovery Charge	dIF / dt = 100 A/µ s		(Note 4)	--	2.35	--	µ C

Notes:

1.Repetitive Rating : Pulse width limited by maximum junction temperature

2.L = 62mH, IAS = 3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3.ISD 6.2A, di/dt 200A/µ s, VDD BVDSS, Starting TJ = 25°C

4.Pulse Test : Pulse width 300µ s, Duty cycle 2%

5.Essentially independent of operating temperature

FQPF6N60

©2000 Fairchild Semiconductor International

Rev. A, April 2000

FQPF6N60

Typical Characteristics

	1	Top :	VGS
	10		15 V
			10 V
			8.0 V
			7.0 V
			6.5 V
			6.0 V
[A]		Bottom :	5.5 V
, Drain Current	100
D
I
				Notes :
10-1				1. 250 s Pulse Test
				2. TC =25
	10-1		100	101

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

		5
		4
],		3					VGS = 10V
[
						VGS	= 20V
DS(ON) ResistanceOn-
		2
R	DrainSource-
		1
								Note : TJ = 25
		0
		0	2	4	6	8	10	12	14	16
					ID, Drain Current [A]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

	1400	Ciss	= Cgs	+ Cgd (Cds = shorted)
		Coss	= Cds	+ Cgd
	1200	Crss	= Cgd
	1000	Ciss
[pF]	800	Coss
Capacitance	600
				Notes :
				1. VGS = 0 V
	400	Crss		2. f = 1 MHz
	200
	0
	10-1	100	101

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

101

[A]			150
Current
	0
Drain	10		25		-55
,
D
I
					Notes :
					1. VDS	=50V
					2. 250 s Pulse Test
	10-1	2	4	6	8	10

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

101

Drain Current [A]	100
Reverse,			150		25
DR							Notes :
I
							1. VGS = 0V
							2. 250 s PulseTest
	-1
	10	0.2	0.4	0.6	0.8	1.0	1.2	1.4

VSD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

	12
	10			VDS = 120V
				VDS	= 300V
[V]
				VDS = 480V
Voltage	8
Gate-Source	6
	4
,
GS	2
V
						Note : ID = 6.2 A
	0
	0	3	6	9	12	15	18	21
			QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

Rev. A, April 2000