Fairchild Semiconductor FDU2572, FDD2572 Datasheet

September 2002

FDD2572 / FDU2572

N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

Features

Applications

•

rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A

• DC/DC converters and Off-Line UPS

• Qg(tot) = 26nC (Typ.), VGS = 10V

• Distributed Power Architectures and VRMs

•

Low Miller Charge

• Primary Switch for 24V and 48V Systems

• Low QRR Body Diode

• High Voltage Synchronous Rectifier

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• Direct Injection / Diesel Injection Systems

Formerly developmental type 82860

• 42V Automotive Load Control

• Electronic Valve Train Systems

DRAIN

SOURCE

D

(FLANGE)

DRAIN

DRAIN

GATE

GATE

(FLANGE)

SOURCE

G

TO-252AA

TO-251AA

FDD SERIES

FDU SERIES

S

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

150

V

VGS

Gate to Source Voltage

± 20

V

Drain Current

Continuous (T

= 25oC, V

= 10V)

29

A

C

GS

I

D

Continuous (T

= 100oC, V

GS

= 10V)

20

A

C

Continuous (T

= 25oC, V

= 10V, R

θ

JA

= 52oC/W)

4

amb

GS

Pulsed

Figure 4

A

EAS

Single Pulse Avalanche Energy (Note 1)

36

mJ

PD

Power dissipation

135

W

Derate above 25oC

0.9

W/oC

TJ, TSTG

Operating and Storage Temperature

-55 to 175

oC

Thermal Characteristics

Rθ JC

Thermal Resistance Junction to Case TO-251, TO-252

1.11

oC/W

Rθ JA

Thermal Resistance Junction to Ambient TO-251, TO-252

100

oC/W

Rθ JA

Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

52

oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

FDU2572 / FDD2572

©2002 Fairchild Semiconductor Corporation

FDD2572 / FDU2572 Rev. B

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD2572

FDD2572

TO-252AA

330mm

16mm

2500 units

FDU2572

FDU2572

TO-251AA

Tube

N/A

75 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250µ A, VGS = 0V

150

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 120V

-

-

1

µ A

VGS = 0V

TC = 150

o

-

-

250

IGSS

Gate to Source Leakage Current

VGS = ± 20V

-

-

± 100

nA

On Characteristics

VGS(TH)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µ A

2

-

4

V

ID=9A, VGS=10V

-

0.045

0.054

rDS(ON)

Drain to Source On Resistance

ID = 4A, VGS = 6V,

-

0.050

0.075

Ω

I

D

=9A, V

=10V, T

C

=175oC

-

0.126

0.146

GS

Dynamic Characteristics

CISS

Input Capacitance

VDS = 25V, VGS = 0V,

-

1770

-

pF

COSS

Output Capacitance

-

183

-

pF

f = 1MHz

CRSS

Reverse Transfer Capacitance

-

40

-

pF

Qg(TOT)

Total Gate Charge at 10V

VGS = 0V to 10V

-

26

34

nC

Qg(TH)

Threshold Gate Charge

VGS = 0V to 2V

VDD = 75V

-

3.3

4.3

nC

Qgs

Gate to Source Gate Charge

ID = 9A

-

8

-

nC

Qgs2

Gate Charge Threshold to Plateau

Ig = 1.0mA

-

5

-

nC

Qgd

Gate to Drain “Miller” Charge

-

6

-

nC

Resistive Switching Characteristics (VGS = 10V)

tON

Turn-On Time

-

-

36

ns

td(ON)

Turn-On Delay Time

-

11

-

ns

tr

Rise Time

VDD = 75V, ID = 9A

-

14

-

ns

td(OFF)

Turn-Off Delay Time

VGS = 10V, RGS = 11.0Ω

-

31

-

ns

tf

Fall Time

-

14

-

ns

tOFF

Turn-Off Time

-

-

66

ns

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Voltage

ISD = 9A

-

-

1.25

V

ISD = 4A

-

-

1.0

V

trr

Reverse Recovery Time

ISD = 9A, dISD/dt =100A/µ s

-

-

74

ns

QRR

Reverse Recovered Charge

ISD = 9A, dISD/dt =100A/µ s

-

-

169

nC

Notes:

1: Starting TJ = 25°C, L = 0.2mH, IAS = 19A.

FDU2572 / FDD2572

©2002 Fairchild Semiconductor Corporation

FDD2572 / FDU2572 Rev. B

Typical Characteristics TC = 25°C unless otherwise noted

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs Ambient Temperature

	40
	35	VGS = 10V
(A)	30
CURRENT	25
	20
,DRAIN	15
	10
D
I
	5
	0
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Current vs Case Temperature

		2.0
		1.0	DUTY CYCLE - DESCENDING ORDER
			0.5
			0.2
	IMPEDANCE		0.1
NORMALIZED			0.05
			0.02
			0.01				PDM
		0.1
,	THERMAL			SINGLE PULSE			t1
θ JC
							t2
Z
						NOTES:
						DUTY FACTOR: D = t1/t2
						PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01
		10-5	10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

	500
																																										T	C = 25oC
																																										FOR TEMPERATURES
									TRANSCONDUCTANCE																																	ABOVE 25oC DERATE PEAK
									MAY LIMIT CURRENT																																	CURRENT AS FOLLOWS:
									IN THIS REGION
(A)
																																											I = I25						175 - TC
CURRENTPEAK,																																																	150
DM	100
I
	20		VGS = 10V
	10-5								10-4										10-3				10-2										10-1									100							101
																							t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

FDU2572 / FDD2572

©2002 Fairchild Semiconductor Corporation

FDD2572 / FDU2572 Rev. B

Typical Characteristics TC = 25°C unless otherwise noted																									FDD2572
	1000												100
									10 s										STARTING T				= 25oC
												AVALANCHE CURRENT (A)										J			FDU2572 /
(A)	100								100 s
CURRENT													10
	10								1ms
, DRAIN		OPERATION IN THIS														STARTING TJ = 150oC
		AREA MAY BE							10ms				1
		LIMITED BY rDS(ON)
D	1
I															If R = 0
												,
		SINGLE PULSE													tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
									DC			AS
		TJ = MAX RATED										I			If R ≠		0
		T = 25oC													tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
		C											0.1
	0.1
	1				10					100	200			0.001					0.01		0.1				1
				VDS, DRAIN TO SOURCE VOLTAGE (V)														tAV, TIME IN AVALANCHE (ms)
	Figure 5. Forward Bias Safe Operating Area											NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
													Figure 6. Unclamped Inductive Switching
																			Capability
	60	PULSE DURATION = 80 s											60
														T		= 25oC			V	= 10V
		DUTY CYCLE = 0.5% MAX													C
	50												50						GS
		VDD = 15V
(A)	40											(A)	40
CURRENT												CURRENT											VGS = 7V
					T	= 175oC
					J																VGS = 6V
	30												30
, DRAIN	20	T	J	= 25oC								,DRAIN	20						V		= 5V
																			GS
									o
D							T	J	= -55 C			D
I	10											I	10
																					PULSE DURATION = 80 s
																					DUTY CYCLE = 0.5% MAX
	0												0
	3.0	3.5		4.0	4.5	5.0	5.5			6.0	6.5			0			1		2		3		4		5
				VGS , GATE TO SOURCE VOLTAGE (V)													VDS , DRAIN TO SOURCE VOLTAGE (V)
		Figure 7. Transfer Characteristics												Figure 8.				Saturation Characteristics
	60	PULSE DURATION = 80 s												3.0
															PULSE DURATION = 80 s
		DUTY CYCLE = 0.5% MAX
)															DUTY CYCLE = 0.5% MAX
TO SOURCE ON RESISTANCE (m Ω												NORMALIZED DRAIN TO SOURCE		2.5
	55				VGS = 6V
													ON RESISTANCE	2.0
	50													1.5
					VGS = 10V
														1.0
	45
														0.5
																					VGS = 10V, ID =9A
DRAIN	40													0
	0				10		20				30			-80			-40	0	40		80		120	160	200
					ID, DRAIN CURRENT (A)													TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Drain to Source On Resistance vs Drain													Figure 10. Normalized Drain to Source On
					Current									Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation																							FDD2572 / FDU2572 Rev. B