Fairchild Semiconductor FQU9N08L, FQD9N08L Datasheet

FQD9N08L / FQU9N08L

80V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

December 2000

QFETTM

Features

• 7.4A, 80V, RDS(on) = 0.21Ω @VGS = 10 V

•Low gate charge ( typical 4.7 nC)

•Low Crss ( typical 16 pF)

•Fast switching

•100% avalanche tested

•Improved dv/dt capability

•175° C maximum junction temperature rating

•Low level gate drive requirements allowing direct operation from logic drives

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Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol		Parameter		FQD9N08L / FQU9N08L	Units
VDSS	Drain-Source Voltage			80	V
ID	Drain Current	- Continuous (TC = 25°C)		7.4	A
		- Continuous (TC = 100°C)		4.68	A
IDM	Drain Current	- Pulsed	(Note 1)	29.6	A
VGSS	Gate-Source Voltage			± 20	V
EAS	Single Pulsed Avalanche Energy		(Note 2)	55	mJ
IAR	Avalanche Current		(Note 1)	7.4	A
EAR	Repetitive Avalanche Energy		(Note 1)	2.5	mJ
dv/dt	Peak Diode Recovery dv/dt		(Note 3)	6.5	V/ns
PD	Power Dissipation (TA = 25°C) *			2.5	W
	Power Dissipation (TC = 25°C)			25	W
		- Derate above 25°C		0.2	W/°C
TJ, TSTG	Operating and Storage Temperature Range			-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,			300	°C
	1/8” from case for 5 seconds

Thermal Characteristics

Symbol	Parameter	Typ	Max	Units
Rθ JC	Thermal Resistance, Junction-to-Case	--	5.0	°C/W
Rθ JA	Thermal Resistance, Junction-to-Ambient *	--	50	°C/W
Rθ JA	Thermal Resistance, Junction-to-Ambient	--	110	°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

FQU9N08L / FQD9N08L

©2000 Fairchild Semiconductor International

Rev. A2, December 2000

	Electrical Characteristics TC = 25°C unless otherwise noted
	Symbol		Parameter	Test Conditions		Min	Typ	Max	Units
	Off Characteristics
	BVDSS		Drain-Source Breakdown Voltage	VGS = 0 V, ID = 250 µ A		80	--	--	V
	∆	BVDSS	Breakdown Voltage Temperature	ID = 250 µ A, Referenced to 25°C		--	0.08	--	V/°C
	/	∆ TJ	Coefficient
	IDSS		Zero Gate Voltage Drain Current	VDS = 80 V, VGS = 0 V		--	--	1	µ	A
				VDS = 64 V, TC = 125°C		--	--	10	µ	A
	IGSSF		Gate-Body Leakage Current, Forward	VGS = 20 V, VDS = 0 V		--	--	100	nA
	IGSSR		Gate-Body Leakage Current, Reverse	VGS = -20 V, VDS = 0 V		--	--	-100	nA
	On Characteristics
	VGS(th)		Gate Threshold Voltage	VDS = VGS, ID = 250 µ A		1.0	--	2.0	V
	RDS(on)		Static Drain-Source	VGS = 10 V, ID = 3.7 A		--	0.15	0.21	Ω
			On-Resistance	VGS = 5 V, ID = 3.7 A			0.17	0.23
	gFS		Forward Transconductance	VDS = 25 V, ID = 3.7 A	(Note 4)	--	4.8	--	S
	Dynamic Characteristics
	Ciss		Input Capacitance	VDS = 25 V, VGS = 0 V,		--	215	280	pF
	Coss		Output Capacitance			--	70	90	pF
				f = 1.0 MHz
	Crss		Reverse Transfer Capacitance			--	16	20	pF
	Switching Characteristics
	td(on)		Turn-On Delay Time	VDD = 40 V, ID = 9.3 A,		--	6.5	23	ns
	tr		Turn-On Rise Time			--	180	370	ns
				RG = 25 Ω
	td(off)		Turn-Off Delay Time			--	13	35	ns
	tf		Turn-Off Fall Time		(Note 4, 5)	--	30	70	ns
	Qg		Total Gate Charge	VDS = 64 V, ID = 9.3 A,		--	4.7	6.1	nC
	Qgs		Gate-Source Charge	VGS = 5 V		--	1.2	--	nC
	Qgd		Gate-Drain Charge		(Note 4, 5)	--	2.8	--	nC
	Drain-Source Diode Characteristics and Maximum Ratings
	IS		Maximum Continuous Drain-Source Diode Forward Current			--	--	7.4	A
	ISM		Maximum Pulsed Drain-Source Diode Forward Current			--	--	29.6	A
	VSD		Drain-Source Diode Forward Voltage	VGS = 0 V, IS = 7.4 A		--	--	1.5	V
	trr		Reverse Recovery Time	VGS = 0 V, IS = 9.3 A,		--	54	--	ns
	Qrr		Reverse Recovery Charge	dIF / dt = 100 A/µ s	(Note 4)	--	80	--	nC

Notes:
1.	Repetitive Rating : Pulse width limited by maximum junction temperature
2.	L = 1.38mH, IAS = 7.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3.	ISD ≤ 9.3A, di/dt ≤ 300A/µ	s, VDD ≤ BVDSS, Starting TJ = 25°C
4.	Pulse Test : Pulse width ≤	300µ s, Duty cycle ≤ 2%
5.	Essentially independent of operating temperature

FQU9N08L / FQD9N08L

©2000 Fairchild Semiconductor International

Rev. A2, December 2000

Typical Characteristics

		VGS
	Top :	10.0 V
		8.0 V
	101	6.0 V
		5.0 V
		4.5 V
[A]		4.0 V
		3.5 V
	Bottom :	3.0 V
Current
	100
, Drain
D
I
			Notes :
			1. 250μs Pulse Test
			2. TC = 25
	10-1
	10-1	100	101

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

		0.8
		0.6
Ω],[					VGS = 5V
DS(on) ResistanceOn-		0.4
R	DrainSource-			VGS = 10V
		0.2
						Note : TJ = 25
		0.0
		0	5	10	15	20	25
				ID , Drain Current		[A]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

	600			Ciss = Cgs + Cgd (Cds = shorted)
				Coss = Cds + Cgd
	500			Crss = Cgd
	400
[pF]				Notes :
Capacitance	300		Ciss	1. VGS = 0 V
				2. f = 1 MHz
	200		Coss
	100		Crss
	0
	10-1	100		101

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

	101						/ FQD9N08L
							FQU9N08L
I						Notes :
[A]
Current			150
Drain,	100		25
D				-55
						1. VDS = 25V
						2. 250μs Pulse Test
	10-1	0	2	4	6	8	10

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

[A]		1
Drain Current	10
Reverse,	100
DR			150		25
I							Notes :
							1. VGS = 0V
							2. 250μs Pulse Test
	-1
	10	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6

VSD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

	12
	10
[V]					VDS = 40V
	8
Voltage				VDS	= 64V
	6
Gate-Source
	4
,
GS	2
V
								Note : ID = 9.3A
	0							7	8	9
	0	1	2	3	4	5	6
				QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

Rev. A2, December 2000