Fairchild Semiconductor FQI4N60, FQB4N60 Datasheet

FQB4N60 / FQI4N60

FQB4N60 / FQI4N60

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

April 2000

QFETTM

Features

• 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V

•Low gate charge ( typical 15 nC)

•Low Crss ( typical 8.0 pF)

•Fast switching

•100% avalanche tested

•Improved dv/dt capability

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FQB Series

FQI Series

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Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol

Parameter

FQB4N60 / FQI4N60

Units

VDSS

Drain-Source Voltage

600

V

ID

Drain Current

- Continuous (TC = 25°C)

4.4

A

- Continuous (TC = 100°C)

2.8

A

IDM

Drain Current

- Pulsed

(Note 1)

17.6

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

260

mJ

IAR

Avalanche Current

(Note 1)

4.4

A

EAR

Repetitive Avalanche Energy

(Note 1)

10.6

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TA = 25°C) *

3.13

W

Power Dissipation (TC = 25°C)

106

W

- Derate above 25°C

0.6

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

300

°C

1/8

from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

Rθ

JC

Thermal Resistance, Junction-to-Case

--

1.18

°C W

Rθ

JA

Thermal Resistance, Junction-to-Ambient *

--

40

°C W

Rθ

JA

Thermal Resistance, Junction-to-Ambient

--

62.5

°C W

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Rev. A, April 2000

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units

Off Characteristics

	BVDSS	Drain-Source Breakdown Voltage	VGS = 0 V, ID = 250 µ A		600	--	--	V
	∆ BVDSS	Breakdown Voltage Temperature	ID = 250 µ A, Referenced to 25°C		--	0.6	--	V/°C
	/ ∆ TJ	Coefficient
	IDSS	Zero Gate Voltage Drain Current	VDS = 600	V, VGS = 0 V	--	--	10	µ A
			VDS = 480	V, TC = 125°C	--	--	100	µ A
	IGSSF	Gate-Body Leakage Current, Forward	VGS = 30 V, VDS = 0 V		--	--	100	nA
	IGSSR	Gate-Body Leakage Current, Reverse	VGS = -30 V, VDS = 0 V		--	--	-100	nA

On Characteristics

VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µ A		3.0	--	5.0	V
RDS(on)	Static Drain-Source	VGS = 10 V, ID = 2.2 A		--	1.77	2.2	Ω
	On-Resistance
gFS	Forward Transconductance	VDS = 50 V, ID = 2.2 A	(Note 4)	--	4.0	--	S

Dynamic Characteristics

	Ciss	Input Capacitance	VDS = 25 V, VGS = 0 V,	--	520	670	pF
	Coss	Output Capacitance		--	70	90	pF
			f = 1.0 MHz
	Crss	Reverse Transfer Capacitance		--	8	11	pF

Switching Characteristics

td(on)	Turn-On Delay Time	VDD = 300 V, ID = 4.4 A,		--	13	35	ns
tr	Turn-On Rise Time			--	45	100	ns
		RG = 25 Ω
td(off)	Turn-Off Delay Time			--	25	60	ns
tf	Turn-Off Fall Time		(Note 4, 5)	--	35	80	ns
Qg	Total Gate Charge	VDS = 480 V, ID = 4.4 A,		--	15	20	nC
Qgs	Gate-Source Charge			--	3.4	--	nC
		VGS = 10 V
Qgd	Gate-Drain Charge		(Note 4, 5)	--	7.1	--	nC

Drain-Source Diode Characteristics and Maximum Ratings

IS	Maximum Continuous Drain-Source Diode Forward Current				--	--	4.4	A
ISM	Maximum Pulsed Drain-Source Diode Forward Current				--	--	17.6	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0	V, IS = 4.4 A		--	--	1.4	V
trr	Reverse Recovery Time	VGS = 0	V, IS = 4.4 A,		--	250	--	ns
Qrr	Reverse Recovery Charge	dIF / dt = 100 A/µ s		(Note 4)	--	1.5	--	µ C

Notes:

1.Repetitive Rating : Pulse width limited by maximum junction temperature

2.L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3.ISD 4.4A, di/dt 200A/µ s, VDD BVDSS, Starting TJ = 25°C

4.Pulse Test : Pulse width 300µ s, Duty cycle 2%

5.Essentially independent of operating temperature

FQI4N60 / FQB4N60

©2000 Fairchild Semiconductor International

Rev. A, April 2000

FQB4N60 / FQI4N60

Typical Characteristics

			VGS
	101	Top :	15 V
			10 V
			8.0 V
			7.0 V
			6.5 V
			6.0 V
[A]		Bottom :	5.5 V
, Drain Current	100
D
I
10-1				Notes :
				1. 250 s Pulse Test
				2. TC =25
	10-1		100	101

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

		6
		5				VGS = 10V
[ ],		4				VGS = 20V
DS(ON) ResistanceOn-		3
R	DrainSource-	2
		1
							Note : TJ = 25
		0
		0	2	4	6	8	10	12
					ID, Drain Current [A]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

	1000	Ciss	= Cgs	+ Cgd (Cds = shorted)
		Coss	= Cds	+ Cgd
		Crss	= Cgd
	800
		Ciss
[pF]	600	Coss
Capacitance	400
				Notes :
				1. VGS = 0 V
		Crss
	200			2. f = 1 MHz
	0
	10-1	100	101

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

101

[A]			150
Current
	100				-55
Drain,			25
D
I
					Notes :
					1. VDS	=50V
					2. 250 s Pulse Test
	10-1	2	4	6	8	10

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

101

DrainCurrent [A]	100
Reverse,
			150		25
DR								Notes :
I
								1. VGS	= 0V
								2. 250 s PulseTest
	-1
	10	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8

VSD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

	12
	10		VDS = 120V
			VDS = 300V
[V]
			VDS	= 480V
Voltage	8
Gate-Source	6
	4
,
GS	2
V
					Note : ID = 4.4 A
	0
	0	3	6	9	12	15
			QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

Rev. A, April 2000