Fairchild Semiconductor FQI33N10, FQB33N10 Datasheet

April 2000

Rev. A, April 2000

FQB33N10 / FQI33N10

QFET

QFETQFET

QFET

TM

FQB33N10 / FQI33N10

100V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• 33A, 100V, R

DS(on)

= 0.052

Ω

@V

GS

= 10 V

• Low gate charge ( typical 38 nC)

• Low Crss ( typical 62 pF)

• Fast switching.

• 100% avalanche tested

• Improved dv/dt capability

• 175

°

C maximum junction temperature rating

!

"

!

"

!

"

!

"

Absolute Maximum Ratings



T

C

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQB33N10 / FQI33N10 Units

V

DSS

Drain-Source Voltage 100 V

I

D

Drain Current

- Continuous (T

C

= 25°C)

33 A

- Continuous (T

C

= 100°C)

23 A

I

DM

Drain Current - Pulsed

(Note 1)

132 A

V

GSS

Gate-Source Voltage

±

25 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

435 mJ

I

AR

Avalanche Current

(Note 1)

33 A

E

AR

Repetitive Avalanche Energy

(Note 1)

12.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

6.0 V/ns

P

D

Power Dissipation (T

A

= 25°C) *

3.75 W

Power Dissipation (T

C

= 25°C)

127 W

- Derate above 25°C 0.85 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

T

L

Maximum lead temperature for soldering purposes,

1/8



from case for 5 seconds

300 °C

Symbol Parameter Typ Max Units

R

θ

JC

Thermal Resistance, Junction-to-Case -- 1.18 °C



W

R

θ

JA

Thermal Resistance, Junction-to-Ambient * -- 40 °C



W

R

θ

JA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C



W

* When mounted on the minimum pad size recommended (PCB Mount)

S

D

G

D

2

-PAK

FQB Series

I

2

-PAK

FQI Series

G

S

D

G

S

D

FQB33N10 / FQI33N10

(Note 4)

(Note 4, 5)

(Note 4)

Rev. A, April 2000

Electrical Characteristics



T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.6mH, I

AS

= 33A, V

DD

= 25V, R

G

= 25

Ω,

Starting T

J

= 25°C

3. I

SD



33A, di/dt



300A/

µ

s, V

DD



BV

DSS,

Starting T

J

= 25°C

4. Pulse Test : Pulse width



300

µ

s, Duty cycle



2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250

µ

A

100 -- -- V

∆

BV

DSS

/

∆

T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250

µ

A, Referenced to 25°C

-- 0.11 -- V/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 100 V, V

GS

= 0 V

-- -- 1

µ

A

V

DS

= 80 V, T

C

= 150°C

-- -- 10

µ

A

I

GSSF

Gate-Body Leakage Current, Forward

V

GS

= 25 V, V

DS

= 0 V

-- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS

= -25 V, V

DS

= 0 V

-- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250

µ

A

2.0 -- 4.0 V

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= 10 V , I

D

= 16.5 A

-- 0.040 0.052

Ω

g

FS

Forward Transconductance

V

DS

= 40 V, I

D

= 16.5 A

-- 22 -- S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 25 V, V

GS

= 0 V,

f = 1.0 MHz

-- 1150 1500 pF

C

oss

Output Capacitance -- 320 420 pF

C

rss

Reverse Transfer Capacitance -- 62 80 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 50 V, I

D

= 33 A,

R

G

= 25

Ω

-- 15 40 ns

t

r

Turn-On Rise Time -- 195 400 ns

t

d(off)

Turn-Off Delay Time -- 80 170 ns

t

f

Turn-Off Fall Time -- 110 230 ns

Q

g

Total Gate Charge

V

DS

= 80 V, I

D

= 33 A,

V

GS

= 10 V

-- 38 51 nC

Q

gs

Gate-Source Charge -- 7.5 -- nC

Q

gd

Gate-Drain Charge -- 18 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= 33 A

-- -- 1.5 V

t

rr

Reverse Recovery Time

V

GS

= 0 V, I

S

= 33 A,

dI

F

/ dt = 100 A/

µ

s

-- 80 -- ns

Q

rr

Reverse Recovery Charge -- 0.22 --

µ

C

FQB33N10 / FQI33N10

Rev. A, April 2000

0 5 10 15 20 25 30 35 40

0

2

4

6

8

10

12

V

DS

= 50V

V

DS

= 80V



Note : I

D

= 33A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd



Notes :

1. V

GS

= 0 V

2. f = 1 M H z

C

rss

C

oss

C

iss

Capacitance [pF]

V

DS

, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

0

10

1

10

2

175



Note s :

1. V

GS

= 0V

2. 250



s Pulse Test

25



I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain voltage [V]

0 20406080100120

0.00

0.05

0.10

0.15

0.20

V

GS

= 20V

V

GS

= 10V



Note : T

J

= 25



R

DS(ON)

[



],

Drain-Source O n -Resistance

I

D

, Drain Current [A]

246810

10

0

10

1

10

2

175



25



-55



Note s :

1. V

DS

= 40V

2. 250



s Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15 .0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Botto m : 4 .5 V



Note s :

1. 250



s Pulse Test

2. T

C

= 25



I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s