Fairchild Semiconductor FES16JTR, FES16BTR, FES16ATR, FES16HTR, FES16GTR Datasheet

FES16AT - FES16JT

Features

•

Low forward voltage drop.

PIN 1

+

PIN 3

CASE

•

High surge current capacity.

Case Positive

•

High current capability.

PIN 1

-

•

High reliability.

1

2

PIN 3

Case Negative

TO-220AC

Suffix "R"

Fast Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

16AT

16BT

16CT

16DT

16FT

16GT

16HT

16JT

VRRM

Maximum Repetitive Reverse

50

100

150

200

300

400

500

600

V

Voltage

IF(AV)

Average Rectified Forward Current,

16

A

.375 " lead length @ TA = 100° C

IFSM

Non-repetitive Peak Forward Surge

250

A

Current

8.3 ms Single Half-Sine-Wave

Tstg

Storage Temperature Range

-65 to +150

V

TJ

Operating Junction Temperature

-65 to +150

pF

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

PD

Power Dissipation

7.81

W

Rθ JA

Thermal Resistance, Junction to Ambient

16

° C/W

Rθ JL

Thermal Resistance, Junction to Lead

1.2

° C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Device

Units

16AT

16BT

16CT

16DT

16FT

16GT

16HT

16JT

VF

Forward Voltage @ 8.0A

0.95

1.3

1.5

V

trr

Reverse Recovery Time

35

50

ns

IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A

IR

Reverse Current @ rated VR

10

A

TA = 25° C

TA = 100° C

500

A

CT

Total Capacitance

170

145

pF

VR = 4.0. f = 1.0 MHz

FES16JT - TFES16A

2001 Fairchild Semiconductor Corporation	FES16AT - FES16JT, Rev. C