Fairchild Semiconductor FGB40N6S2, FGP40N6S2, FGH40N6S2 Datasheet

August 2003

FGH40N6S2 / FGP40N6S2 / FGB40N6S2

600V, SMPS II Series N-Channel IGBT

General Description

The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:

•Power Factor Correction (PFC) circuits

•Full bridge topologies

•Half bridge topologies

•Push-Pull circuits

•Uninterruptible power supplies

•Zero voltage and zero current switching circuits

IGBT (co-pack) formerly Developmental Type TA49438

Features

•100kHz Operation at 390V, 24A

•200kHZ Operation at 390V, 18A

•600V Switching SOA Capability

•	Typical Fall Time. . . . . . . . . . .	85ns at TJ = 125oC
•	Low Gate Charge . . . . . . . . .	35nC at VGE = 15V
•	Low Plateau Voltage . . . . . . .	. . . . . .6.5V Typical
•	UIS Rated . . . . . . . . . . . . . . .	. . . . . . . . . . 260mJ
•	Low Conduction Loss

Package

Symbol

TO-247

E

C

TO-220AB

E

C

G

C

TO-263AB

G

G

G

E

COLLECTOR

COLLECTOR

E

(Back-Metal)

(Flange)

Device Maximum Ratings TC= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

BVCES

Collector to Emitter Breakdown Voltage

600

V

IC25

Collector Current Continuous, TC = 25°C

75

A

IC110

Collector Current Continuous, TC = 110°C

35

A

ICM

Collector Current Pulsed (Note 1)

180

A

VGES

Gate to Emitter Voltage Continuous

±20

V

VGEM

Gate to Emitter Voltage Pulsed

±30

V

SSOA

Switching Safe Operating Area at TJ = 150°C, Figure 2

100A at 600V

EAS

Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V

260

mJ

PD

Power Dissipation Total TC = 25°C

290

W

Power Dissipation Derating TC > 25°C

2.33

W/°C

TJ

Operating Junction Temperature Range

-55 to 150

°C

TSTG

Storage Junction Temperature Range

-55 to 150

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

FGB40N6S2 / FGP40N6S2 / FGH40N6S2

©2003 Fairchild Semiconductor Corporation

FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5

Package Marking and Ordering Information

Device Marking	Device	Package	Reel Size	Tape Width	Quantity
40N6S2	FGH40N6S2	TO-247	Tube	N/A	30
40N6S2	FGP40N6S2	TO-220AB	Tube	N/A	50
40N6S2	FGB40N6S2	TO-263AB	Tube	N/A	50
40N6S2	FGB40N6S2T	TO-263AB	330mm	24mm	800

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BVCES	Collector to Emitter Breakdown Voltage	IC = 250µ A, VGE = 0			600	-	-	V
BVECS	Emitter to Collector Breakdown Voltage	IC = -10mA, VGE = 0			20	-	-	V
ICES	Collector to Emitter Leakage Current	VCE = 600V		TJ = 25°C	-	-	250	µ A
				TJ = 125°C	-	-	2.0	mA
IGES	Gate to Emitter Leakage Current	VGE = ± 20V			-	-	±250	nA

On State Characteristics

VCE(SAT)	Collector to Emitter Saturation Voltage	IC = 20A,		TJ = 25°C	-	1.9	2.7	V
		VGE = 15V		TJ = 125°C	-	1.7	2.0	V

Dynamic Characteristics

QG(ON)	Gate Charge	IC = 20A,		VGE = 15V		-	35	42	nC
		VCE = 300V		V	= 20V	-	45	55	nC
				GE
VGE(TH)	Gate to Emitter Threshold Voltage	IC = 250µ A, VCE = VGE				3.5	4.3	5.0	V
VGEP	Gate to Emitter Plateau Voltage	IC = 20A, VCE = 300V				-	6.5	8.0	V

Switching Characteristics

	SSOA	Switching SOA	TJ = 150°C, VGE = 15V, RG = 3Ω	100	-	-	A
			L = 100µ H, VCE = 600V
	td(ON)I	Current Turn-On Delay Time	IGBT and Diode at TJ = 25°C,	-	8.0	-	ns
	t	Current Rise Time	ICE = 20A,	-	10	-	ns
	rI		VCE = 390V,
	td(OFF)I	Current Turn-Off Delay Time		-	35	-	ns
			VGE = 15V,
	tfI	Current Fall Time		-	55	-	ns
			RG = 3Ω
	EON1	Turn-On Energy (Note 2)		-	115	-	µ J
			L = 200µ H
	EON2	Turn-On Energy (Note 2)	Test Circuit - Figure 26	-	200	-	µ J
	EOFF	Turn-Off Energy (Note 3)		-	195	260	µ J
	td(ON)I	Current Turn-On Delay Time	IGBT and Diode at TJ = 125°C	-	14	-	ns
	t	Current Rise Time	ICE = 20A,	-	18	-	ns
	rI		VCE = 390V,
	td(OFF)I	Current Turn-Off Delay Time		-	68	85	ns
			VGE = 15V,
	tfI	Current Fall Time		-	85	105	ns
			RG = 3Ω
	EON1	Turn-On Energy (Note 2)		-	115	-	µ J
			L = 200µ H
	EON2	Turn-On Energy (Note 2)	Test Circuit - Figure 26	-	380	450	µ J
	EOFF	Turn-Off Energy (Note 3)		-	375	600	µ J

Thermal Characteristics

Rθ JC

Thermal Resistance Junction-Case

TO-247

-

-

0.43

°C/W

NOTE:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss

of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26.

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

FGB40N6S2 / FGP40N6S2 / FGH40N6S2

©2003 Fairchild Semiconductor Corporation

FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5

Typical Performance Curves TJ = 25°C unless otherwise noted																														/FGH40N6S2
	90															TO EMITTER CURRENT (A)	125
	80	PACKAGE LIMITED															TJ = 150oC, RG = 3Ω , VGE = 15V, L = 100µ H
COLLECTOR CURRENT (A)
	70																100
	60
	50																75
	40
																	50
	30
DC	20															COLLECTOR,	25													FGP40N6S2
,
CE
	10
I																CE
	0															I	0
																														/
	25			50				75		100			125		150		0		100	200		300		400	500		600		700
																														FGB40N6S2
					T	C	, CASE TEMPERATURE (oC)												V , COLLECTOR TO EMITTER VOLTAGE (V)
																			CE
	Figure 1. DC Collector Current vs Case															Figure 2. Minimum Switching Safe Operating Area
							Temperature
	1000												TC = 75oC				13											500
																									o
																CIRCUIT WITHSTAND TIME ( s)			VCE = 390V, RG = 3Ω , TJ = 125 C										SHORT CIRCUIT CURRENT (A)
OPERATING, FREQUENCY (kHz)																	11											450
	100												VGE = 15V
		fMAX1 = 0.05 / (td(OFF)I + td(ON)I)															9							ISC				400
		fMAX2 = (PD - PC) / (EON2 + EOFF)
		PC = CONDUCTION DISSIPATION															7											350
	10		(DUTY FACTOR = 50%)									VGE = 10V
		R	= 0.27oC/W, SEE NOTES
		θ JC
																	5							tSC				300
MAX																SHORT													PEAK,
f																,													SC
			o													SC
	TJ = 125 C, RG = 3Ω , L = 200µ H, VCE = 390V
																t	3											250	I
	1
	1								10				30		60		9	10		11		12	13		14	15	16
			ICE, COLLECTOR TO EMITTER CURRENT (A)																VGE, GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to																	Figure 4. Short Circuit Withstand Time
					Emitter Current
(A)	40	DUTY CYCLE < 0.5%, VGE =10V															40	DUTY CYCLE < 0.5%, VGE =15V
																(A)
		PULSE DURATION = 250µ s																PULSE DURATION = 250µ s
CURRENT	35															CURRENT	35
	30																30
EMITTER	25															EMITTER	25
	20																20
TO	15															TO	15
COLLECTOR																COLLECTOR
													T	= 25oC													T	= 25oC
	10												J				10										J
	5							TJ = 150oC									5					TJ = 150oC
,																,
CE														o		CE												o
I	0												TJ = 125 C			I	0										TJ = 125 C
	0.0	0.2	0.4		0.6		0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4		0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4
			VCE, COLLECTOR TO EMITTER VOLTAGE (V)																VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage																Figure 6. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation																						FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5