April 1998
FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
100 A, 30 V. RDS(ON) = 0.007 Ω @ VGS=10 V RDS(ON) = 0.010 Ω @ VGS=5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
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Absolute Maximum Ratings |
TC = 25°C unless otherwise noted |
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Symbol |
Parameter |
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FDP7030L |
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FDB7030L |
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Units |
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VDSS |
Drain-Source Voltage |
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30 |
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V |
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VGSS |
Gate-Source Voltage - Continuous |
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±20 |
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V |
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ID |
Drain Current - Continuous |
(Note 1) |
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100 |
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A |
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75 |
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- Pulsed |
(Note 1) |
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300 |
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PD |
Total Power Dissipation @ TC = 25°C |
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125 |
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W |
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Derate above 25°C |
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0.83 |
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W/°C |
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TJ,TSTG |
Operating and Storage Temperature Range |
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-65 to 175 |
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°C |
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TL |
Maximum lead temperature for soldering purposes, |
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275 |
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°C |
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1/8" from case for 5 seconds |
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THERMAL CHARACTERISTICS |
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RθJC |
Thermal Resistance, Junction-to-Case |
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1.2 |
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°C/W |
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RθJA |
Thermal Resistance, Junction-to-Ambient |
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62.5 |
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°C/W |
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© 1998 Fairchild Semiconductor Corporation |
FDP7030L Rev.D1 |
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol |
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Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
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DRAIN-SOURCE AVALANCHE RATINGS (Note 1) |
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WDSS |
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Single Pulse Drain-Source Avalanche Energy |
VDD = 15 V, ID = 38 A |
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200 |
mJ |
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IAR |
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Maximum Drain-Source Avalanche Current |
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38 |
A |
OFF CHARACTERISTICS |
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BVDSS |
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Drain-Source Breakdown Voltage |
VGS = 0 V, ID = 250 µA |
30 |
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V |
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BV |
/ |
T |
J |
Breakdown Voltage Temp. Coefficient |
ID = 250 µA, Referenced to 25 oC |
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36 |
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mV/oC |
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DSS |
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IDSS |
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Zero Gate Voltage Drain Current |
VDS = 24 V, VGS = 0 V |
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10 |
µA |
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TJ =125 °C |
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1 |
mA |
IGSSF |
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Gate - Body Leakage, Forward |
VGS = 20 V, VDS = 0 V |
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100 |
nA |
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IGSSR |
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Gate - Body Leakage, Reverse |
VGS = -20 V, VDS = 0 V |
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-100 |
nA |
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ON CHARACTERISTICS (Note 2) |
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VGS(th) |
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Gate Threshold Voltage |
VDS = VGS, ID = 250 µA |
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1.5 |
2 |
V |
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V |
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T |
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Gate Threshold Voltage Temp.Coefficient |
ID = 250 µA, Referenced to 25 oC |
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-5 |
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mV/oC |
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GS(th) |
J |
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RDS(ON) |
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Static Drain-Source On-Resistance |
VGS = 10 V, ID = 50 A |
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0.006 |
0.007 |
Ω |
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TJ = 125°C |
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0.009 |
0.011 |
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VGS = 5 V, ID = 40 A |
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0.009 |
0.01 |
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ID(on) |
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On-State Drain Current |
VGS = 10 V, VDS = 10 V |
60 |
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A |
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gFS |
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Forward Transconductance |
VDS = 10 V, ID = 50 A |
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50 |
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DYNAMIC CHARACTERISTICS |
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Ciss |
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Input Capacitance |
VDS = 15 V, VGS = 0 V, |
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2150 |
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pF |
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f = 1.0 MHz |
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Coss |
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Output Capacitance |
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1290 |
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pF |
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Crss |
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Reverse Transfer Capacitance |
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420 |
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pF |
SWITCHING CHARACTERISTICS (Note 2) |
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tD(on) |
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Turn - On Delay Time |
VDD = 15 V, ID = 75 A, |
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10 |
20 |
nS |
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tr |
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Turn - On Rise Time |
VGS = 10 V, RGEN = 6 Ω |
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160 |
225 |
nS |
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RGS = 10 Ω |
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tD(off) |
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Turn - Off Delay Time |
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70 |
95 |
nS |
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tf |
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Turn - Off Fall Time |
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140 |
195 |
nS |
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Qg |
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Total Gate Charge |
VDS = 12 V |
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35 |
50 |
nC |
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Qgs |
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Gate-Source Charge |
ID = 50 A, VGS= 4.5 V |
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12 |
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nC |
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Qgd |
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Gate-Drain Charge |
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18 |
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nC |
DRAIN-SOURCE DIODE CHARACTERISTICS |
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IS |
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Maximum Continuos Drain-Source Diode Forward Current |
(Note 1) |
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100 |
A |
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ISM |
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Maximum Pulsed Drain-Source Diode Forward Current |
(Note 2) |
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300 |
A |
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VSD |
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Drain-Source Diode Forward Voltage |
VGS = 0 V, IS = 50 A (Note 2) |
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1 |
1.3 |
V |
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TJ = 125°C |
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0.85 |
1.1 |
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Notes
1.Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2.Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP7030L Rev.D1
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