Fairchild Semiconductor FDP6035L, FDB6035L Datasheet

April 1998

FDP6035L/FDB6035L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

58 A, 30 V. RDS(ON) = 0.011 Ω @ VGS=10 V RDS(ON) = 0.019 Ω @ VGS=4.5 V.

Low gate charge (typical 34 nC).

Low Crss (typical 175 pF).

Fast switching speed.

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D

G

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol	Parameter	FDP6035L		FDB6035L	Units
VDSS	Drain-Source Voltage		30		V
VGSS	Gate-Source Voltage		±20		V
ID	Drain Current - Continuous		58		A
	- Pulsed		175
PD	Maximum Power Dissipation @ TC = 25°C		75		W
	Derate above 25°C		0.5		W/°C
TJ,TSTG	Operating and Storage Temperature Range		-65 to 175		°C
THERMAL CHARACTERISTICS
RθJC	Thermal Resistance, Junction-to-Case		2		°C/W
RθJA	Thermal Resistance, Junction-to-Ambient		62.5		°C/W

© 1998 Fairchild Semiconductor Corporation

FDP6035L Rev.B

Electrical Characteristics TC = 25°C unless otherwise noted)

Symbol				Parameter	Conditions		Min	Typ	Max	Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS				Single Pulse Drain-Source Avalanche Energy	VDD = 15 V, ID = 21 A				150	mJ
IAR				Maximum Drain-Source Avalanche Current					21	A
OFF CHARACTERISTICS
BVDSS				Drain-Source Breakdown Voltage	VGS = 0 V, ID = 250 µA		30			V
BV	/	T	J	Breakdown Voltage Temp. Coefficient	ID = 250 µA, Referenced to 25 oC			37		mV/oC
DSS
IDSS				Zero Gate Voltage Drain Current	VDS = 24 V, VGS = 0 V				10	µA
IGSSF				Gate - Body Leakage, Forward	VGS = 20 V, VDS = 0 V				100	nA
IGSSR				Gate - Body Leakage, Reverse	VGS = -20 V, VDS = 0 V				-100	nA
ON CHARACTERISTICS (Note 1)
VGS(th)				Gate Threshold Voltage	VDS = VGS, ID = 250 µA		1	1.6	3	V
V	/	T		Gate Threshold Voltage Temp.Coefficient	ID = 250 µA, Referenced to 25 oC			-4		mV/oC
GS(th)		J
RDS(ON)				Static Drain-Source On-Resistance	VGS = 10 V, ID = 26 A			0.0095	0.011	Ω
						TJ =125 °C		0.014	0.019
					VGS = 4.5 V, ID = 21 A			0.015	0.019
ID(on)				On-State Drain Current	VGS = 10 V, VDS = 10 V		60			A
ID(on)				On-State Drain Current	VGS = 4.5 V, VDS = 10 V		15			A
gFS				Forward Transconductance	VDS = 10 V, ID = 26 A			37		S
DYNAMIC CHARACTERISTICS
Ciss				Input Capacitance	VDS = 15 V, VGS = 0 V,			1230		pF
					f = 1.0 MHz
Coss				Output Capacitance				640		pF
Crss				Reverse Transfer Capacitance				175		pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on)				Turn - On Delay Time	VDD = 15 V, ID = 58 A			7.6	15	nS
t				Turn - On Rise Time	VGS = 10 V, RGEN = 24 Ω			150	210	nS
r
tD(off)				Turn - Off Delay Time				29	46	nS
tf				Turn - Off Fall Time				17	27	nS
Qg				Total Gate Charge	VDS= 12 V			34	46	nC
Qgs				Gate-Source Charge	ID = 58 A, VGS= 10 V			6		nC
Qgd				Gate-Drain Charge				8		nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS				Maximum Continuous Drain-Source Diode Forward Current					58	A
VSD				Drain-Source Diode Forward Voltage	VGS = 0 V, IS = 26 A (Note 1)			0.91	1.3	V
						TJ = 125°C		0.8	1.2
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

FDP6035L Rev.B