Fairchild Semiconductor FMB3904, FFB3904 Datasheet

Discrete POWER & Signal

Technologies

FFB3904	FMB3904	MMPQ3904
E2	C2	B4
		E4
B2	E1	B3
C1		E3
	C1	B2
		E2
		B1
		E1
C2	B2	C4C4
B1	E2	C3
		C3
pin #1 E1	pin #1 B1	C2C2
SC70-6	SuperSOTä-6	SOIC-16 C1 C1
Mark: .1A	Mark: .1A

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.

The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	40	V
VCBO	Collector-Base Voltage	60	V
VEBO	Emitter-Base Voltage	6.0	V
IC	Collector Current - Continuous	200	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol	Characteristic		Max		Units
		FFB3904	FMB3904	MMPQ3904
PD	Total Device Dissipation	300	700	1,000	mW
	Derate above 25°C	2.4	5.6	8.0	mW/°C
RθJA	Thermal Resistance, Junction to Ambient	415	180		°C/W
	Effective 4 Die			125	°C/W
	Each Die			240	°C/W

MMPQ3904 / FMB3904 / FFB3904

ã 1998 Fairchild Semiconductor Corporation

NPN Multi-Chip General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units

OFF CHARACTERISTICS

V(BR)CEO	Collector-Emitter Breakdown Voltage	IC = 1.0 mA, IB = 0		40			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC = 10 μA, IE = 0		60			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE = 10 μA, IC = 0		6.0			V
IBL	Base Cutoff Current	VCE = 30	V, VEB = 0			50	nA
ICEX	Collector Cutoff Current	VCE = 30	V, VEB = 0			50	nA

ON CHARACTERISTICS*

hFE	DC Current Gain	IC = 0.1 mA, VCE = 1.0 V	40
		IC = 1.0 mA, VCE = 1.0 V	70
		IC = 10 mA, VCE = 1.0 V	100		300
		IC = 50 mA, VCE = 1.0 V	60
		IC = 100 mA, VCE = 1.0 V	30
VCE(sat)	Collector-Emitter Saturation Voltage	IC = 10 mA, IB = 1.0 mA			0.2	V
		IC = 50 mA, IB = 5.0 mA			0.3	V
VBE(sat)	Base-Emitter Saturation Voltage	IC = 10 mA, IB = 1.0 mA	0.65		0.85	V
		IC = 50 mA, IB = 5.0 mA			0.95	V

SMALL SIGNAL CHARACTERISTICS

fT	Current Gain - Bandwidth Product	IC = 10 mA, VCE = 20 V,		450		MHz
		f = 100 MHz
Cobo	Output Capacitance	VCB = 5.0 V, IE = 0,		2.5		pF
		f = 1.0 MHz
Cibo	Input Capacitance	VEB = 0.5 V, IC = 0,		6.0		pF
		f = 1.0 MHz
NF	Noise Figure (except MMPQ3904)	IC = 100 μA, VCE = 5.0 V,		2.0		dB
		RS =1.0kΩ, f=10 Hz to 15.7 kHz

SWITCHING CHARACTERISTICS

td		Delay Time	VCC = 3.0	V, VBE = 0.5 V,		18		ns
tr		Rise Time	IC = 10 mA, IB1 = 1.0 mA			20		ns
ts		Storage Time	VCC = 3.0	V, IC = 10mA		150		ns
tf		Fall Time	IB1 = IB2 = 1.0 mA			25		ns
	*Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%

MMPQ3904 / FMB3904 / FFB3904