Fairchild Semiconductor FDP3652, FDI3652, FDB3652 Datasheet

October 2002

FDB3652 / FDP3652 / FDI3652

N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ

Features		Applications
•	rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A	• DC/DC Converters and Off-line UPS
• Qg(tot) = 41nC (Typ.), VGS = 10V		• Distributed Power Architectures and VRMs
•	Low Miller Charge	• Primary Switch for 24V and 48V Systems
•	Low QRR Body Diode	• High Voltage Synchronous Rectifier
• UIS Capability (Single Pulse and Repetitive Pulse)		• Direct Injection / Diesel Injection Systems
• Qualified to AEC Q101		• 42V Automotive Load Control
Formerly developmental type 82769		• Electronic Valve Train Systems

		DRAIN		SOURCE
				DRAIN
		(FLANGE)			D
				GATE
	GATE
			SOURCE
	SOURCE		DRAIN	G
			GATE
	TO-263AB	DRAIN	TO-220AB	TO-262AA	S
		(FLANGE)
	FDB SERIES		DRAIN	FDI SERIES
			FDP SERIES
			(FLANGE)

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

	Symbol					Parameter	Ratings	Units
VDSS		Drain to Source Voltage					100	V
VGS		Gate to Source Voltage					±20	V
		Drain Current
		Continuous (TC = 25oC, VGS = 10V)					61	A
I	D	Continuous (T = 100oC, V			GS	= 10V)	43	A
		C
		Continuous (Tamb = 25oC, VGS = 10V) with Rθ JA = 43oC/W)					9	A
		Pulsed					Figure 4	A
EAS		Single Pulse Avalanche Energy (Note 1)					182	mJ
PD		Power dissipation					150	W
		Derate above 25	o	C			1.0	W/	o	C
TJ, TSTG		Operating and Storage Temperature					-55 to 175	oC

Thermal Characteristics

Rθ JC	Thermal Resistance Junction to Case TO-220, TO-263, TO-262	1.0	oC/W
Rθ JA	Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2)	62	oC/W
Rθ JA	Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area	43	oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

FDI3652 / FDP3652 / FDB3652

©2002 Fairchild Semiconductor Corporation

FDB3652 / FDP3652 / FDI3652 Rev. B

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDB3652

FDB3652

TO-263AB

330mm

24mm

800 units

FDP3652

FDP3652

TO-220AB

Tube

N/A

50 units

FDI3652

FDI3652

TO-262AA

Tube

N/A

50 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250µ A, VGS = 0V

105

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 80V

-

-

1

µ A

V

= 0V

T

C

= 150oC

-

-

250

GS

IGSS

Gate to Source Leakage Current

VGS = ±20V

-

-

±100

nA

On Characteristics

VGS(TH)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µ A

2

-

4

V

ID = 61A, VGS = 10V

-

0.014

0.016

rDS(ON)

Drain to Source On Resistance

ID = 30A, VGS = 6V

-

0.018

0.026

Ω

ID = 61A, VGS = 10V,

-

0.035

0.043

TJ = 175oC

Dynamic Characteristics

CISS

Input Capacitance

VDS = 25V, VGS = 0V,

-

2880

-

pF

COSS

Output Capacitance

-

390

-

pF

f = 1MHz

CRSS

Reverse Transfer Capacitance

-

100

-

pF

Qg(TOT)

Total Gate Charge at 10V

VGS = 0V to 10V

41

53

nC

Qg(TH)

Threshold Gate Charge

VGS = 0V to 2V

VDD = 50V

-

5

6.5

nC

Qgs

Gate to Source Gate Charge

ID = 61A

-

15

-

nC

Qgs2

Gate Charge Threshold to Plateau

Ig = 1.0mA

-

10

-

nC

Qgd

Gate to Drain “Miller” Charge

-

10

-

nC

Switching Characteristics (VGS = 10V)

tON

Turn-On Time

-

-

146

ns

td(ON)

Turn-On Delay Time

-

12

-

ns

tr

Rise Time

VDD = 50V, ID = 61A

-

85

-

ns

td(OFF)

Turn-Off Delay Time

VGS = 10V, RGS = 6.8Ω

-

26

-

ns

tf

Fall Time

-

45

-

ns

tOFF

Turn-Off Time

-

-

107

ns

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Voltage

ISD = 61A

-

-

1.25

V

ISD = 30A

-

-

1.0

V

trr

Reverse Recovery Time

ISD = 61A, dISD/dt = 100A/µ s

-

-

62

ns

QRR

Reverse Recovered Charge

ISD = 61A, dISD/dt = 100A/µ s

-

-

45

nC

Notes:

1:Starting TJ = 25°C, L = 0.228mH, IAS = 40A.

2:Pulse Width = 100s

FDI3652 / FDP3652 / FDB3652

©2002 Fairchild Semiconductor Corporation

FDB3652 / FDP3652 / FDI3652 Rev. B

Typical Characteristics TC = 25°C unless otherwise noted

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs Ambient Temperature

	75
(A)
DRAIN CURRENT	50
	25
,
D
I
	0
	25	50	75	100	125	150	175
			T , CASE TEMPERATURE (oC)
			C

Figure 2. Maximum Continuous Drain Current vs Case Temperature

		2
			DUTY CYCLE - DESCENDING ORDER
		1	0.5
			0.2
			0.1
	IMPEDANCE		0.05
NORMALIZED			0.02
			0.01
								PDM
		0.1
,	THERMAL							t1
JC
θ
Z								t2
								NOTES:
				SINGLE PULSE				DUTY FACTOR: D = t1/t2
		0.01						PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		10-5		10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

	1000
																																													TC = 25oC
																																													FOR TEMPERATURES
														TRANSCONDUCTANCE																															ABOVE 25oC DERATE PEAK
(A)														MAY LIMIT CURRENT																															CURRENT AS FOLLOWS:
														IN THIS REGION
CURRENT
																																														I = I25							175 - TC
																																																					150
PEAK,
			VGS = 10V
DM	100
I	50
	10-5		10-4																	10-3				10-2											10-1										100								101
																										t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

FDI3652 / FDP3652 / FDB3652

©2002 Fairchild Semiconductor Corporation

FDB3652 / FDP3652 / FDI3652 Rev. B

Typical Characteristics TC = 25°C unless otherwise noted																		FDB3652
	1000							500
									If R = 0				- VDD)
					10 s				tAV = (L)(IAS)/(1.3*RATED BVDSS
							(A)		If R ¼	0
									tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]									/
(A)	100						AVALANCHE CURRENT	100										/ FDP3652
CURRENT					100 s
														STARTING T		= 25oC
														J
	10	OPERATION IN THIS
		AREA MAY BE
, DRAIN
		LIMITED BY rDS(ON)						10
					1ms
D	1
I
					10ms		,											FDI3652
		SINGLE PULSE					AS		STARTING TJ = 150oC
		TJ = MAX RATED					I
	0.1	TC = 25oC			DC
									1
	1	10			100	200			0.01		0.1			1			10
		VDS, DRAIN TO SOURCE VOLTAGE (V)									tAV, TIME IN AVALANCHE (ms)
	Figure 5. Forward Bias Safe Operating Area						NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
								Figure 6. Unclamped Inductive Switching
											Capability
	125	PULSE DURATION = 80 s						125
		DUTY CYCLE = 0.5% MAX								VGS = 10V			VGS = 7V
(A)	100	VDD = 15V						100
							(A)							VGS = 6V
CURRENT	75						CURRENT		75
		TJ = 175oC
,DRAIN	50						,DRAIN		50						TC = 25oC
		T = 25oC	T	J	= -55oC								PULSE DURATION = 80 s
D		J					D						DUTY CYCLE = 0.5% MAX
I							I
	25								25
											VGS = 5V
	0								0
	3	4	5		6	7			0		1	2		3			4
		VGS, GATE TO SOURCE VOLTAGE (V)								VDS , DRAIN TO SOURCE VOLTAGE (V)
		Figure 7. Transfer Characteristics							Figure 8.		Saturation Characteristics
	20								3.0
Ω )		PULSE DURATION = 80 s							PULSE DURATION = 80 s
DRAIN TO SOURCE ON RESISTANCE(m		DUTY CYCLE = 0.5% MAX					NORMALIZED DRAIN TO SOURCE		DUTY CYCLE = 0.5% MAX
									2.5
	18
		VGS = 6V						ON RESISTANCE	2.0
	16								1.5
									1.0
	14
		VGS = 10V							0.5
	12													VGS = 10V, ID = 61A
									0
	0	20	40			60			-80	-40	0	40	80	120	160		200
		I , DRAIN CURRENT (A)									T , JUNCTION TEMPERATURE (oC)
		D									J
Figure 9. Drain to Source On Resistance vs Drain								Figure 10. Normalized Drain to Source On
		Current							Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation														FDB3652 / FDP3652 / FDI3652 Rev. B