Fairchild Semiconductor FDLL916, FDLL914B, FDLL914A, FDLL914, FDLL4448 Datasheet

Discrete POWER & Signal

Technologies

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

	DO-35	LL-34
		THE PLACEMENT OF THE EXPANSION GAP
		HAS NO RELATIONSHIP TO THE LOCATION
		OF THE CATHODE TERMINAL

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND

FDLL914 BLACK BROWN FDLL914A BLACK GRAY FDLL914B BROWN BLACK FDLL916 BLACK RED FDLL916A BLACK WHITE FDLL916B BROWN BROWN FDLL4148 BLACK BROWN FDLL4448 BROWN BLACK

High Conductance Fast Diode

Sourced from Process D3.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
WIV	Working Inverse Voltage		75	V
IO	Average Rectified Current		200	mA
IF	DC Forward Current		300	mA
if	Recurrent Peak Forward Current		400	mA
if(surge)	Peak Forward Surge Current
	Pulse width = 1.0 second		1.0	A
	Pulse width = 1.0 microsecond		4.0	A
Tstg	Storage Temperature Range		-65 to +200	°C
TJ	Operating Junction Temperature		175	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 200 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic		Max	Units
			1N/FDLL 914/A/B / 4148 / 4448
PD	Total Device Dissipation		500	mW
	Derate above 25°C		3.33	mW/°C
RθJA	Thermal Resistance, Junction to Ambient		300	°C/W

4448 / 4148 / 916/A/B / 914/A/B 1N/FDLL

ã 1997 Fairchild Semiconductor Corporation

High Conductance Fast Diode

(continued)

Electrical Characteristics			TA = 25°C unless otherwise noted
Symbol	Parameter			Test Conditions	Min	Max	Units
BV	Breakdown Voltage			IR = 100 μA	100		V
				IR = 5.0 μA	75		V
IR	Reverse Current			VR = 20 V		25	nA
				VR = 20 V, TA = 150°C		50	μA
				VR = 75 V		5.0	μA
VF	Forward Voltage	1N914B / 4448		IF = 5.0 mA	620	720	mV
		1N916B		IF = 5.0 mA	630	730	mV
	1N914 / 916 / 4148			IF = 10 mA		1.0	V
		1N914A / 916A		IF = 20 mA		1.0	V
		1N916B		IF = 30 mA		1.0	V
		1N914B / 4448		IF = 100 mA		1.0	V
CO	Diode Capacitance	1N916/A/B / 4448		VR = 0, f = 1.0 MHz		2.0	pF
		1N914/A/B / 4148		VR = 0, f = 1.0 MHz		4.0	pF
TRR	Reverse Recovery Time			IF = 10 mA, VR = 6.0 V (60 mA),		4.0	nS
				Irr = 1.0 mA, RL = 100 Ω

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA

(V)	160	Ta= 25°C
VOLTAGE	150
	140
- REVERSE	130
	120
R
R
V
V	110
		2	3	5	10	20	30	50	100
	1

IR - REVERSE CURRENT (uA)

REVERSE CURRENT vs REVERSE VOLTAGE

(nA)	IR - 10 to 100 V
	120
CURRENT	Ta= 25°C
	100
	80
REVERSE-	60
	40
	20
R	0	20	30	50	70	100
I	10
	VR	- REVERSE VOLTAGE (V)
	GENERAL RULE: The Reverse Current of a diode will approximately
	double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA

(mV)	550	Ta= 25°C
	500
VOLTAGE
	450
	400
FORWARD
	350
	300
-
F
V	250	2	3	5	10	20	30	50	100
	1

IF - FORWARD CURRENT (uA)

FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 100 mA

(mV)	750	Ta= 25°C
	700
VOLTAGE
	650
	600
FORWARD
	550
	500
-
F
V	450		0.2	0.3	0.5	1	2	3	5	10
	0.1
				IF - FORWARD CURRENT (mA)

4448 / 4148 / 916/A/B / 914/A/B 1N/FDLL