Fairchild Semiconductor FDP3632, FDI3632, FDB3632 Datasheet

April 2003

FDB3632 / FDP3632 / FDI3632

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features

Applications

• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A

• DC/DC converters and Off-Line UPS

• Qg(tot) = 84nC (Typ.), VGS = 10V

• Distributed Power Architectures and VRMs

• Low Miller Charge

• Primary Switch for 24V and 48V Systems

• Low QRR Body Diode

• High Voltage Synchronous Rectifier

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• Direct Injection / Diesel Injection Systems

Formerly developmental type 82784

• 42V Automotive Load Control

• Electronic Valve Train Systems

D

DRAIN

DRAIN

SOURCE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

GATE

DRAIN

GATE

GATE

SOURCE

G

TO-220AB

TO-263AB

TO-262AB

DRAIN

S

FDP SERIES

FDB SERIES

(FLANGE)

FDI SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

100

V

VGS

Gate to Source Voltage

± 20

V

Drain Current

ID

Continuous (T

C

< 111oC, V

GS

= 10V)

80

A

Continuous (T

= 25oC, V

= 10V, R

θ

JA

= 43oC/W)

12

A

amb

GS

Pulsed

Figure 4

A

EAS

Single Pulse Avalanche Energy (Note 1)

393

mJ

PD

Power dissipation

310

W

Derate above 25oC

2.07

W/oC

TJ, TSTG

Operating and Storage Temperature

-55 to 175

oC

Thermal Characteristics

Rθ JC

Thermal Resistance Junction to Case TO-220, TO-263, TO-262

0.48

oC/W

Rθ JA

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)

62

oC/W

Rθ JA

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

43

oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

FDI3632 / FDP3632 / FDB3632

©2003 Fairchild Semiconductor Corporation

FDB3632 / FDP3632 / FDI3632 Rev. B1

Package Marking and Ordering Information

Device Marking	Device	Package	Reel Size	Tape Width	Quantity
FDB3632	FDB3632	TO-263AB	330mm	24mm	800 units
FDP3632	FDP3632	TO-220AB	Tube	N/A	50 units
FDI3632	FDI3632	TO-262AA	Tube	N/A	50 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS	Drain to Source Breakdown Voltage	ID = 250µ A, VGS = 0V		100	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 80V		-	-	1	µ A
		VGS = 0V	o
			TC= 150 C	-	-	250
IGSS	Gate to Source Leakage Current	VGS = ± 20V		-	-	± 100	nA

On Characteristics

VGS(TH)	Gate to Source Threshold Voltage	VGS = VDS, ID = 250µ A				2	-	4	V
		ID=80A, VGS=10V				-	0.0075	0.009
rDS(ON)	Drain to Source On Resistance	ID =40A, VGS = 6V,				-	0.009	0.015	Ω
		I	D	=80A, V	=10V, T =175oC	-	0.018	0.022
				GS	C

Dynamic Characteristics

	CISS	Input Capacitance	VDS = 25V, VGS	= 0V,		-	6000	-	pF
	COSS	Output Capacitance				-	820	-	pF
			f = 1MHz
	CRSS	Reverse Transfer Capacitance				-	200	-	pF
	Qg(TOT)	Total Gate Charge at 10V	VGS = 0V to 10V			-	84	110	nC
	Qg(TH)	Threshold Gate Charge	VGS = 0V to 2V		VDD = 50V	-	11	14	nC
	Qgs	Gate to Source Gate Charge			ID = 80A	-	30	-	nC
	Qgs2	Gate Charge Threshold to Plateau			Ig = 1.0mA	-	20	-	nC
	Qgd	Gate to Drain “Miller” Charge				-	20	-	nC

Resistive Switching Characteristics (VGS = 10V)

tON	Turn-On Time		-	-	102	ns
td(ON)	Turn-On Delay Time		-	30	-	ns
tr	Rise Time	VDD = 50V, ID = 80A	-	39	-	ns
td(OFF)	Turn-Off Delay Time	VGS = 10V, RGS = 3.6Ω	-	96	-	ns
tf	Fall Time		-	46	-	ns
tOFF	Turn-Off Time		-	-	213	ns

Drain-Source Diode Characteristics

	VSD	Source to Drain Diode Voltage	ISD = 80A	-	-	1.25	V
			ISD = 40A	-	-	1.0	V
	trr	Reverse Recovery Time	ISD = 75A, dISD/dt= 100A/µ s	-	-	64	ns
	QRR	Reverse Recovered Charge	ISD = 75A, dISD/dt= 100A/µ s	-	-	120	nC

Notes:

1:Starting TJ = 25°C, L = 0.12mH, IAS = 75A.

2:Pulse Width = 100s

FDI3632 / FDP3632 / FDB3632

©2003 Fairchild Semiconductor Corporation

FDB3632 / FDP3632 / FDI3632 Rev. B1

Typical Characteristics TA = 25°C unless otherwise noted

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs Ambient Temperature

	125			CURRENT LIMITED
				BY PACKAGE
	100
(A)
CURRENT	75	VGS = 10V
, DRAIN	50
D
I	25
	0
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Current vs Case Temperature

		2
		DUTY CYCLE - DESCENDING ORDER
		1	0.5
			0.2
			0.1
			0.05
NORMALIZED	IMPEDANCE		0.02
			0.01
							PDM
		0.1
,	THERMAL						t1
JC
θ							t2
Z
							NOTES:
			SINGLE PULSE				DUTY FACTOR: D = t1/t2
		0.01					PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		10-5	10-4	10-3	10-2	10-1	100	101
				t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

IDM, PEAK CURRENT (A)

2000

TRANSCONDUCTANCE MAY LIMIT CURRENT

IN THIS REGION

1000

VGS = 10V

100

50

TC = 25oC

FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

I = I25		175 - TC
		150

10-5	10-4	10-3	10-2	10-1	100	101
			t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

FDI3632 / FDP3632 / FDB3632

©2003 Fairchild Semiconductor Corporation

FDB3632 / FDP3632 / FDI3632 Rev. B1

Typical Characteristics TA = 25°C unless otherwise noted																				FDB3632
	400							10 s			200
												If R = 0
												tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
												If R ≠	0
	100											tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
										(A)										/
(A)											100
								100 s
CURRENT										AVALANCHECURRENT										/FDP3632
			OPERATION IN THIS												STARTING TJ = 25oC
	10		AREA MAY BE
			LIMITED BY rDS(ON)
,DRAIN								1ms
	1
D												STARTING TJ = 150oC
I								10ms
	SINGLE PULSE									,										FDI3632
								DC		AS
	TJ = MAX RATED
										I
	TC = 25oC										10
	0.1
	1					10		100	200			0.01		0.1			1		10
			VDS, DRAIN TO SOURCE VOLTAGE (V)											tAV, TIME IN AVALANCHE (ms)
	Figure 5. Forward Bias Safe Operating Area
										NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
											Figure 6. Unclamped Inductive Switching
														Capability
	150										150
			PULSE DURATION = 80 s									VGS = 10V			VGS = 6V
			DUTY CYCLE = 0.5% MAX
	120		VDD = 15V								120						VGS = 5.5V
, DRAIN CURRENT (A)	90			T		= 175oC				,DRAIN CURRENT (A)	90
					J												VGS = 5V
	60										60
			TJ = 25oC				T = -55oC											T = 25oC
D	30						J			D	30							C
I										I
																PULSE DURATION = 80 s
																DUTY CYCLE = 0.5% MAX
	0										0
	3.0		3.5	4.0		4.5	5.0	5.5	6.0			0		1	2		3		4
			VGS , GATE TO SOURCE VOLTAGE (V)										VDS, DRAIN TO SOURCE VOLTAGE (V)
			Figure 7.	Transfer Characteristics								Figure 8.		Saturation Characteristics
Ω )	10	PULSE DURATION = 80 s										2.5
												PULSE DURATION = 80 s
DRAIN TO SOURCE ON RESISTANCE (m		DUTY CYCLE = 0.5% MAX					VGS = 6V			NORMALIZED DRAIN TO SOURCE		DUTY CYCLE = 0.5% MAX
	9											2.0
	8										ON RESISTANCE	1.5
							VGS = 10V
	7											1.0
																	VGS = 10V, ID =80A
	6											0.5
	0		20			40	62		80			-80	-40	0	40	80	120	160	200
				ID, DRAIN CURRENT (A)										TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Drain to Source On Resistance vs Drain											Figure 10. Normalized Drain to Source On
				Current								Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation																FDB3632 / FDP3632 / FDI3632 Rev. B1