Discrete POWER & Signal
Technologies
ES1A - ES1D
Features
•For surface mount applications.
•Glass passivated junction.
•Low profile package.
•Easy pick and place.
•Built-in strain relief.
•Superfast recovery times for high efficiency.
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0.181 (4.597) |
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0.157 (3.988) |
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0.062 (1.575) |
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0.055 (1.397) |
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0.114 (2.896) |
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2 |
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1 |
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0.098 (2.489) |
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0.208 (5.283) |
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0.188 (4.775) |
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SMA/DO-214AC |
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0.096 (2.438) |
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COLOR BAND DENOTES CATHODE |
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0.078 (1.981) |
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0.060 (1.524) |
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0.008 (0.203) |
0.012 (0.305) |
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1.0 Ampere Superfast Rectifiers |
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0.030 (0.762) |
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0.004 (0.102) |
0.006 (0.152) |
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Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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IO |
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Average Rectified Current |
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1.0 |
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A |
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@ TA = 120°C |
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if(surge) |
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Peak Forward Surge Current |
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8.3 ms single half-sine-wave |
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30 |
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A |
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Superimposed on rated load (JEDEC method) |
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PD |
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Total Device Dissipation |
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1.47 |
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W |
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Derate above 25°C |
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11.76 |
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mW/°C |
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RθJA |
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Thermal Resistance, Junction to Ambient** |
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85 |
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°C/W |
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RθJL |
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Thermal Resistance, Junction to Lead** |
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35 |
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°C/W |
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Tstg |
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Storage Temperature Range |
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-50 to +150 |
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°C |
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TJ |
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Operating Junction Temperature |
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-50 to +150 |
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°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. |
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**Device mounted on FR-4 PCB 0.013 mm. |
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Electrical Characteristics TA = 25°C unless otherwise noted |
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Parameter |
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Device |
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Units |
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1A |
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1B |
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1C |
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1D |
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Peak Repetitive Reverse Voltage |
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50 |
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100 |
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150 |
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200 |
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V |
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Maximum RMS Voltage |
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35 |
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70 |
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105 |
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140 |
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V |
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DC Reverse Voltage |
(Rated VR) |
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50 |
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100 |
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150 |
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200 |
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V |
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Maximum Reverse Current |
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μA |
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@ rated VR |
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TA = 25°C |
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5.0 |
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TA = 100°C |
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100 |
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μA |
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Maximum Reverse Recovery Time |
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15 |
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nS |
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IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A |
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Maximum Forward Voltage @ 1.0 A |
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0.92 |
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V |
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Typical Junction Capacitance |
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7.0 |
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pF |
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VR = 4.0 V, f = 1.0 MHz |
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ES1D - ES1A
ã1999 Fairchild Semiconductor Corporation |
ES1A-ES1D, Rev. A |