SGS Thomson Microelectronics SMTPA68, SMTPA100, SMTPA120, SMTPA130, SMTPA180 Datasheet

FEATURES

BIDIRECTIONAL CROWBAR PROTECTION.

BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V.

HOLDING CURRENT = 150 mA min

REPETITIVE PEAK PULSE CURRENT : IPP = 50 A, 10/1000 μs.

DESCRIPTION

The SMTPAxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines.

SMTPA SERIES

TRISIL

SMB

(JEDEC DO-214AA)

SCHEMATIC DIAGRAM

	COMPLIES WITH THE	Peak Surge	Voltage	Current	Admissible	Necessary
		Voltage	Waveform	Waveform	Ipp	Resistor
	FOLLOWING STANDARDS:
		(V)	(μs)	(μs)	(A)	(Ω)
	(CCITT) ITU-K20	1000	10/700	5/310	25	-
	(CCITT) ITU-K17	1500	10/700	5/310	38	-
	VDE0433	2000	10/700	5/310	50	-
	VDE0878	2000	1.2/50	1/20	50	-
	IEC-1000-4-5	level 3	10/700	5/310	50	-
		level 4	1.2/50	8/20	100	-
	FCC Part 68, lightning surge	1500	10/160	10/160	75	12.5
	type A	800	10/560	10/560	55	6.5
	FCC Part 68, lightning surge	1000	9/720	5/320	25	-
	type B
	BELLCORE TR-NWT-001089	2500	2/10	2/10	150	11.5
	First level	1000	10/1000	10/1000	50	10
	BELLCORE TR-NWT-001089	5000	2/10	2/10	150	11.5
	Second level
	CNET l31-24	1000	0.5/700	0.8/310	25	-

October 1998 - Ed: 7A	1/5

SMTPA xxx

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol				Parameter				Value		Unit
P		Power dissipation				Tlead = 50 °C		5		W
IPP		Peak pulse current				10/1000 μs		50		A
						8/20 μs		100
ITSM		Non repetitive surge peak on-state				tp = 20 ms		30		A
		current
dV/dt		Critical rate of rise of off-state voltage				VRM		5		KV/μs
Tstg		Storage temperature range						- 55 to + 150		°C
Tj		Maximum junction temperature						150		°C
TL		Maximum lead temperature for soldering during 10 s.						260		°C
THERMAL RESISTANCES
Symbol				Parameter				Value		Unit
Rth (j-l)		Junction to leads.						20		°C/W
Rth (j-a)		Junction to ambient on printed circuit						100		°C/W
		with standard footprint dimensions.
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol			Parameter
VRM	Stand-off voltage
IRM	Leakage current at stand-off voltage
VR	Continuous Reverse voltage
VBR	Breakdown voltage
VBO	Breakover voltage
IH	Holding current
IBO	Breakover current
IPP	Peak pulse current
C	Capacitance
Type		Marking	IRM @ VRM		IR @ VR		VBO @ IBO		IH	C
			max.		max.		max.	max.	min.	max.
					note 1		note2		note3	note4
		Laser	μA	V	μA	V	V	mA	mA	pF
SMTPA62		U01	2	56	50	62	82	800	150	150
SMTPA68		U05	2	61	50	68	90	800	150	150
SMTPA100		U13	2	90	50	100	133	800	150	100
SMTPA120		U17	2	108	50	120	160	800	150	100
SMTPA130		U19	2	117	50	130	173	800	150	100
SMTPA180		U25	2	162	50	180	240	800	150	100
SMTPA200		U27	2	180	50	200	267	800	150	100
SMTPA220		U31	2	198	50	220	293	800	150	100
SMTPA240		U35	2	216	50	240	320	800	150	100
SMTPA270		U39	2	243	50	270	360	800	150	100

All parameters tested at 25°C, except where indicated.

Note 1:	IR measured at VR guarantee VBRmin ≥ VR	Note 3:	See test circuit 2.
Note 2:	Measured at 50 Hz (1 cycle) - See test circuit 1.	Note 4:	VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR.

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