SGS Thomson Microelectronics SM4T33CA, SM4T36A, SM4T36CA, SM4T39A, SM4T39CA Datasheet

SM4T6V8,A/220,A

SM4T6V8C,CA/220C,CA

TRANSIL

.FEATURES

. PEAK PULSE POWER= 400 W @ 1ms. BREAKDOWN VOLTAGE RANGE :

. From 6V8 to 220 V.

. UNI AND BIDIRECTIONAL TYPES.

. LOW CLAMPING FACTOR.

FAST RESPONSE TIME:

. Tclamping : 1ps (0 V to VBR). JEDEC REGISTRED.

SOD 6

(Plastic)

DESCRIPTION

Transil diodes provide high overvoltage protection by clamping action. Their instantaneous reponse to transients makes them praticularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's.

ABSOLUTE RATINGS (limiting values)

.MECHANICAL CHARACTERISTICS

Body marked with : Logo, Date Code, Type Code and Cathode Band (for unidirectional

. types only).

Full compatibility with both gluing and paste

. soldering technologies.

. Excellent on board stability.

. Tinned copper leads.

High temperature resistant resin.

Symbol	Parameter		Value	Unit
Pp	Peak pulse power dissipation	Tamb = 25°C	400	W
	See note 1 and derating curve Fig 1.
P	Power dissipation on infinite heatsink	Tlead = 50°C	5	W
	See note 1 and derating curve Fig 1.
IFSM	Non repetitive surge peak forward current.	Tamb = 25°C	50	A
	For unidirectional types.	t =10 ms
Tstg	Storage and junction temperature range		- 65 to + 175	°C
Tj			150	°C
TL	Maximum lead temperature for soldering		260	°C
	during 10 s.

November 1992

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THERMAL RESISTANCES

Symbol	Parameter	Value	Unit
Rth (j-l)	Junction-leads on infinite heatsink	20	°C/W
Rth (j-a)	Junction to ambiant. on printed circuit.	100	°C/W
	With standard footprint dimensions.

ELECTRICAL CHARACTERISTICS
Symbol	Parameter		I
VRM	Stand-off voltage.		IF
VBR	Breakdown voltage.
VCL	VCL	VBR
	Clamping voltage.	VRM	V F
IRM	Leakage current @ VRM.		V
			I RM
IPP	Surge current.
αT	Voltage temperature coefficient.
VF	Forward Voltage drop		I PP
	VF < 3.5V @ IF = 25 A.

	TYPES			IRM @ VRM			VBR		@ IR			VCL @ IPP		VCL @ IPP		αT	C
				max			min	nom max				max		max		max	typ
								note2				10/1000μs		8/20μs		note3	note4
Uni		Bi		μA		V	V	V	V	mA		V	A	V	A	10-4/°C	( F)
directional	*	directional	*														P
SM4T6V8	QD	SM4T6V8C	VD	1000		5.8	6.45	6.8	7.48	10		10.5	38	13.4	174	5.7	3500
SM4T6V8A	QE	SM4T6V8CA	VE	1000		5.8	6.45	6.8	7.14	10		10.5	38	13.4	174	5.7	3500
SM4T7V5	QF	SM4T7V5C	VF	500		6.4	7.13	7.5	8.25	10		11.3	35.4	14.5	160	6.1	3100
SM4T7V5A	QG	SM4T7V5CA	VG	500		6.4	7.13	7.5	7.88	10		11.3	35.4	14.5	160	6.1	3100
SM4T10	QN	SM4T10C	VN	10		8.55	9.5	10	11	1		14.5	27.6	18.6	124	7.3	2000
SM4T10A	QP	SM4T10CA	VP	10		8.55	9.5	10	10.5	1		14.5	27.6	18.6	124	7.3	2000
SM4T12	QS	SM4T12C	VS	5		10.2	11.4	12	13.2	1		16.7	24	21.7	106	7.8	1550
SM4T12A	QT	SM4T12CA	VT	5		10.2	11.4	12	12.6	1		16.7	24	21.7	106	7.8	1550
SM4T15	QW	SM4T15C	VW	5		12.8	14.3	15	16.5	1		21.2	19	27.2	85	8.4	1200
SM4T15A	QX	SM4T15CA	VX	5		12.8	14.3	15	15.8	1		21.2	19	27.2	85	8.4	1200
SM4T18	RD	SM4T18C	UD	5		15.3	17.1	18	19.8	1		25.2	16	32.5	71	8.8	975
SM4T18A	RE	SM4T18CA	UE	5		15.3	17.1	18	18.9	1		25.2	16	32.5	71	8.8	975
SM4T22	RH	SM4T22C	UH	5		18.8	20.9	22	24.2	1		30.6	13	39.3	59	9.2	800
SM4T22A	RK	SM4T22CA	UK	5		18.8	20.9	22	23.1	1		30.6	13	39.3	59	9.2	800
SM4T24	RL	SM4T24C	UL	5		20.5	22.8	24	26.4	1		33.2	12	42.8	54	9.4	725
SM4T24A	RM	SM4T24CA	UM	5		20.5	22.8	24	25.2	1		33.2	12	42.8	54	9.4	725
SM4T27	RN	SM4T27C	UN	5		23.1	25.7	27	29.7	1		37.5	10.7	48.3	48	9.6	625
SM4T27A	RP	SM4T27CA	UP	5		23.1	25.7	27	28.4	1		37.5	10.7	48.3	48	9.6	625
SM4T30	RQ	SM4T30C	UQ	5		25.6	28.5	30	33	1		41.5	9.6	53.5	43	9.7	575
SM4T30A	RR	SM4T30C4	UR	5		25.6	28.5	30	31.5	1		41.5	9.6	53.5	43	9.7	575
SM4T33	RS	SM4T33C	US	5		28.2	31.4	33	36.3	1		45.7	8.8	59.0	39	9.8	510
SM4T33A	RT	SM4T33CA	UT	5		28.2	31.4	33	34.7	1		45.7	8.8	59.0	39	9.8	510
SM4T36	RU	SM4T36C	UU	5		30.8	34.2	36	39.6	1		49.9	8	64.3	36	9.9	480
SM4T36A	RV	SM4T36CA	UV	5		30.8	34.2	36	37.8	1		49.9	8	64.3	36	9.9	480
SM4T39	RW	SM4T39C	UW	5		33.3	37.1	39	42.9	1		53.9	7.4	69.7	33	10.0	450
SM4T39	RX	SM4T39	UX	5		33.3	37.1	39	41.0	1		53.9	7.4	69.7	33	10.0	450
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	TYPES			IRM @ VRM		VBR		@		IR	VCL @ IPP		VCL @ IPP		αT	C
				max		min	nom max				max		max		max	typ
							note2				10/1000μs		8/20μs		note3	note4
Uni		Bi		μA	V	V	V		V	mA	V	A	V	A	10-4/°C	( F)
directional	*	directional	*													P
SM4T68	SN	SM4T68C	WN	5	58.1	64.6	68		74.8	1	92	4.3	121	19	10.4	270
SM4T68A	SP	SM4T68CA	WP	5	58.1	64.6	68		71.4	1	92	4.3	121	19	10.4	270
SM4T100	SW	SM4T100C	WW	5	85.5	95.0	100		110	1	137	2.9	178	13	10.6	200
SM4T100A	SX	SM4T100CA	WX	5	85.5	95.0	100		105	1	137	2.9	178	13	10.6	200
SM4T150	TH	SM4T150C	XH	5	128	143	150		165	1	207	2.0	265	9	10.8	145
SM4T150A	TK	SM4T150CA	XK	5	128	143	150		158	1	207	2.0	265	9	10.8	145
SM4T200	TS	SM4T200C	XS	5	171	190	200		220	1	274	1.5	353	6.5	10.8	120
SM4T200A	TT	SM4T200CA	XT	5	171	190	200		210	1	274	1.5	353	6.5	10.8	120
SM4T220	TU	SM4T220C	XU	5	188	209	220		242	1	328	1.4	388	6	10.8	110
SM4T220A	TV	SM4T220CA	XV	5	188	209	220		231	1	328	1.4	388	6	10.8	110

All parameters tested at 25 °C, except where indicated.

* = Marking

				Figure 1: Power dissipation derating versus
				ambient temperature
% I PP				100 %
	10	s
100
				80 %					Peak Power
								(on printed circuit).
		PULSE WAVEFORM 10/1000	s
50				60 %
				40 %			Average Power
						(on infinite heatsink).
0			t	20 %
	1000	s
								Tamb (˚c)
				0%
Note 1 :	For surges greater than the maximum values,			0	20	40	60	80 100 120	140 160 180	200
	the diode will present a short-circuit Anode - Cathode.

Note 2 : Pulse test: TP < 50 ms.

Note 3 : VBR = αT * (Ta - 25) * VBR(25°C).

Note 4 : VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2.

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