SGS Thomson Microelectronics SM15T27A, SM15T27CA, SM15T30A, SM15T30CA, SM15T33A Datasheet

	SM15T6V8A/220A
	SM15T6V8CA/220CA

TRANSILTM

FEATURES

PEAK PULSE POWER : 1500 W (10/1000μs)

BREAKDOWN VOLTAGE RANGE :

From 6.8 V to 220 V

UNI AND BIDIRECTIONAL TYPES

LOW CLAMPING FACTOR

FAST RESPONSE TIME

UL RECOGNIZED

DESCRIPTION

Transil diodes provide high overvoltage protection by clamping action. Their instantane ous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

Parameter

SMC

Value Unit

PPP	Peak pulse power dissipation (see note1)	Tj initial = Tamb	1500	W
P	Power dissipation on infinite heatsink	Tamb = 50°C	6.5	W
IFSM	Non repetitive surge peak forward	tp = 10ms	200	A
	current for unidirectional types	Tj initial = Tamb
Tstg	Storage temperature range		- 65 to + 175	°C
Tj	Maximum junction temperature		150	°C
TL	Maximum lead temperature for soldering during 10 s.		260	°C

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES

Symbol

Rth (j-l)

Rth (j-a)

Parameter	Value	Unit
Junction to leads	15	°C/W
Junction to ambient on printed circuit on recommended pad	75	°C/W
layout

August 1999 Ed : 2A

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SM15Txx
ELECTRICAL CHARACTERISTICS		I
(Tamb = 25°C)
		IF
Symbol	Parameter

VRM	Stand-off voltage
VBR	Breakdown voltage
VCL	Clamping voltage
IRM	Leakage current @ VRM
IPP	Peak pulse current
αT	Voltage temperature coefficient
VF	Forward Voltage drop
	Types			IRM @ VRM
				max
Uni	Mar-	Bi	Mar-	μA	V
directional	king	directional	king
SM15T6V8A	MDE	SM15T6V8CA	BDE	1000	5.8
SM15T7V5A	MDG	SM15T7V5CA	BDG	500	6.4
SM15T10A	MDP	SM15T10CA	NDP	10	8.55
SM15T12A	MDT	SM15T12CA	BDT	5	10.2
SM15T15A	MDX	SM15T15CA	BDX	5	12.8
SM15T18A	MEE	SM15T18CA	BEE	5	15.3
SM15T22A	MEK	SM15T22CA	BEK	5	18.8
SM15T24A	MEM	SM15T24CA	BEM	5	20.5
SM15T27A	MEP	SM15T27CA	BEP	5	23.1
SM15T30A	MER	SM15T30CA	BER	5	25.6
SM15T33A	MET	SM15T33CA	BET	5	28.2
SM15T36A	MEV	SM15T36CA	BEV	5	30.8
SM15T39A	MEX	SM15T39CA	BEX	5	33.3
SM15T68A	MFP	SM15T68CA	BFP	5	58.1
SM15T100A	MFX	SM15T100CA	BFX	5	85.5
SM15T150A	MGK	SM15T150CA	BGK	5	128
SM15T200A	MGV	SM15T200CA	BGV	5	171
SM15T220A	MGX	SM15T220CA	BGX	5	188
% IPP
10 0	10	s

VCL VBR

VRM	V F
	V
	I RM

I PP

	VBR	@ IR		VCL @ IPP		VCL @ IPP		αT C
min	nom	max		max		max		max	typ
	note2			10/1000μs		8/20μs		note3 note4
V	V	V	mA	V	A	V	A 10-4/°C pF
6.45	6.8	7.14	10	10.5	143	13.4	746	5.7	9500
7.13	7.5	7.88	10	11.3	132	14.5	690	6.1	8500
9.5	10	10.5	1	14.5	103	18.6	538	7.3	7000
11.4	12	12.6	1	16.7	90	21.7	461	7.8	6000
14.3	15	15.8	1	21.2	71	27.2	368	8.4	5000
17.1	18	18.9	1	25.2	59.5	32.5	308	8.8	4300
20.9	22	23.1	1	30.6	49	39.3	254	9.2	3700
22.8	24	25.2	1	33.2	45	42.8	234	9.4	3500
25.7	27	28.4	1	37.5	40	48.3	207	9.6	3200
28.5	30	31.5	1	41.5	36	53.5	187	9.7	2900
31.4	33	34.7	1	45.7	33	59.0	169	9.8	2700
34.2	36	37.8	1	49.9	30	64.3	156	9.9	2500
37.1	39	41.0	1	53.9	28	69.7	143	10.0	2400
64.6	68	71.4	1	92	16.3	121	83	10.4	1550
95.0	100	105	1	137	11	178	56	10.6	1150
143	150	158	1	207	7.2	265	38	10.8	850
190	200	210	1	274	5.5	353	28	10.8	675
209	220	231	1	328	4.6	388	26	10.8	625

Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board).

	PULSE WAVEFORM 10/10 00 s
50
0	t
	100 0 s
Note 2 :	Pulse test: tp < 50 ms.
Note 3 :	VBR = αT * (Tamb - 25) * VBR(25°C).
Note 4 :	VR = 0 V, F = 1 MHz. For bidirectional types,
	capacitance value is divided by 2.

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