SGS Thomson Microelectronics M27C512-90XN6TR, M27C512-90XN6, M27C512-90XN3TR, M27C512-90XN3, M27C512-90XN1TR Datasheet

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1/18April 2001
M27C512
512 Kbit (64Kb x8) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
ACCESS TIME: 45ns
LOW POWER “CMOS” CONSUMPTION:
Active Current 30mA
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
PROGRAMMING TIMES of AROUND 6sec.
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: 3Dh
DESCRIPTION
The M27C512 is a 512 Kbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for applica-
tions where fast turn-around and pattern experi-
mentation are important requirements and is
organized as 65,536 by 8 bits.
The FDIP28W (window ceramic frit-seal package)
has transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase thebitpat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27C512 is offered in PDIP28, PLCC32 and
TSOP28 (8 x 13.4 mm) packages.
Figure 1. Logic Diagram
AI00761B
16
Q0-Q7
V
CC
M27C512
GV
PP
V
SS
8
A0-A15
E
1
28
28
1
FDIP28W (F) PDIP28 (B)
PLCC32 (C) TSOP28 (N)
8 x 13.4 mm
M27C512
2/18
Figure 2B. LCC Connections
AI00763
A13
A8
A10
Q4
17
A0
NC
Q0
Q1
Q2
DU
Q3
A6
A3
A2
A1
A5
A4
9
A14
A9
1
A15
A11
Q6
A7
Q7
32
DU
V
CC
M27C512
A12
NC
Q5
GV
PP
E
25
V
SS
Figure 2A. DIP Connections
A1
A0
Q0
A7
A4
A3
A2
A6
A5
A13
A10
A8
A9
Q7
A14
A11
GV
PP
E
Q5Q1
Q2
Q3V
SS
Q4
Q6
A12
A15 V
CC
AI00762
M27C512
8
1
2
3
4
5
6
7
9
10
11
12
13
14
16
15
28
27
26
25
24
23
22
21
20
19
18
17
Figure 2C. TSOP Connections
A1
A0
Q0
A5
A2
A4
A3
A9
A11
Q7
A8
GV
PP
E
Q5
Q1
Q2
Q3
Q4
Q6
A13
A14
A12
A6
A15
V
CC
A7
AI00764B
M27C512
28
1
22
78
14
15
21
V
SS
A10
Table 1. Signal Names
A0-A15 Address Inputs
Q0-Q7 Data Outputs
E Chip Enable
GV
PP
Output Enable / Program Supply
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
DU
Don’t Use
3/18
M27C512
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and otherrelevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
CC
+0.5V with possible overshoot to V
CC
+2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Note: X = V
IH
or V
IL
,V
ID
= 12V ± 0.5V.
Table 4. Electronic Signature
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature
(3)
–40 to 125 °C
T
BIAS
Temperature Under Bias –50 to 125 °C
T
STG
Storage Temperature –65 to 150 °C
V
IO
(2)
Input or Output Voltage (except A9) –2 to 7 V
V
CC
Supply Voltage –2 to 7 V
V
A9
(2)
A9 Voltage –2 to 13.5 V
V
PP
Program Supply Voltage –2 to 14 V
Mode E
GV
PP
A9 Q7-Q0
Read
V
IL
V
IL
X Data Out
Output Disable V
IL
V
IH
X Hi-Z
Program
V
IL
Pulse V
PP
XDataIn
Program Inhibit V
IH
V
PP
X Hi-Z
Standby
V
IH
X X Hi-Z
Electronic Signature
V
IL
V
IL
V
ID
Codes
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code
V
IL
00100000 20h
Device Code
V
IH
00111101 3Dh
M27C512
4/18
DEVICE OPERATION
The modes of operations of the M27C512 are list-
ed in the Operating Modes table. A single power
supply is required in the read mode. All inputs are
TTL levels except for GV
PP
and 12V on A9 for
Electronic Signature.
Read Mode
The M27C512 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable(G) is the output control and should
be used to gate data to the output pins, indepen-
dent of device selection. Assuming that the ad-
dresses are stable, the address access time
(t
AVQV
) is equal to the delay from E to output
(t
ELQV
). Data is availableat the output after a delay
of t
GLQV
from the falling edge of G, assuming that
E has been low and the addresses have been sta-
ble for at least t
AVQV
-t
GLQV
.
Standby Mode
The M27C512 has a standby mode which reduces
the active current from 30mA to 100µA The
M27C512 is placed in the standby mode by apply-
ing aCMOS highsignal to the Einput. When in the
standby mode, the outputs are in a high imped-
ance state, independent of the GV
PP
input.
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns
Input Pulse Voltages 0 to 3V 0.4V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. Testing Input Output Waveform
AI01822
3V
High Speed
0V
1.5V
2.4V
Standard
0.4V
2.0V
0.8V
Figure 4. AC Testing Load Circuit
AI01823B
1.3V
OUT
C
L
C
L
= 30pF for High Speed
C
L
= 100pF for Standard
C
L
includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 6. Capacitance
(1)
(T
A
=25°C, f = 1 MHz)
Note: 1. Sampled only, not 100% tested.
Symbol Parameter Test Condition Min Max Unit
C
IN
Input Capacitance
V
IN
=0V
6pF
C
OUT
Output Capacitance
V
OUT
=0V
12 pF
5/18
M27C512
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; V
CC
=5V±5% or 5V ± 10%; V
PP
=V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; V
CC
=5V±5% or 5V ± 10%; V
PP
=V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Symbol Parameter Test Condition Min Max Unit
I
LI
Input Leakage Current 0V V
IN
V
CC
±10 µA
I
LO
Output Leakage Current 0V V
OUT
V
CC
±10 µA
I
CC
Supply Current
E=V
IL
,G=V
IL
,
I
OUT
= 0mA, f = 5MHz
30 mA
I
CC1
Supply Current (Standby) TTL
E=V
IH
1mA
I
CC2
Supply Current (Standby) CMOS
E>V
CC
0.2V
100 µA
I
PP
Program Current
V
PP
=V
CC
10 µA
V
IL
Input Low Voltage –0.3 0.8 V
V
IH
(2)
Input High Voltage 2
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4 V
V
OH
Output High Voltage TTL
I
OH
= –1mA
3.6 V
Output High Voltage CMOS
I
OH
= –100µAV
CC
0.7V
V
Symbol Alt Parameter Test Condition
M27C512
Unit
-45
(3)
-60 -70 -80
Min Max Min Max Min Max Min Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E=V
IL
,G=V
IL
45 60 70 80 ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G=V
IL
45 60 70 80 ns
t
GLQV
t
OE
Output Enable Low
to Output Valid
E=V
IL
25 30 35 40 ns
t
EHQZ
(2)
t
DF
Chip Enable High to
Output Hi-Z
G=V
IL
0 25 0 25 0 30 0 30 ns
t
GHQZ
(2)
t
DF
Output Enable High
to Output Hi-Z
E=V
IL
0 25 0 25 0 30 0 30 ns
t
AXQX
t
OH
Address Transition to
Output Transition
E=V
IL
,G=V
IL
0000ns
M27C512
6/18
Figure 5. Read Mode AC Waveforms
AI00735B
tAXQX
tEHQZ
A0-A15
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; V
CC
=5V±5% or 5V ± 10%; V
PP
=V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol Alt Parameter Test Condition
M27C512
Unit
-90
-10 -12 -15/-20/-25
Min Max Min Max Min Max Min Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E=V
IL
,G=V
IL
90 100 120 150 ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G=V
IL
90 100 120 150 ns
t
GLQV
t
OE
Output Enable Low
to Output Valid
E=V
IL
40 40 50 60 ns
t
EHQZ
(2)
t
DF
Chip Enable High to
Output Hi-Z
G=V
IL
0 30 0 30 0 40 0 50 ns
t
GHQZ
(2)
t
DF
Output Enable High
to Output Hi-Z
E=V
IL
0 30 0 30 0 40 0 50 ns
t
AXQX
t
OH
Address Transition to
Output Transition
E=V
IL
,G=V
IL
0000ns
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