Philips BD623, BD621 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D109

BF621; BF623

PNP high-voltage transistors

Product specification			1999 Apr 21
Supersedes data of 1997 Apr 09

Philips Semiconductors	Product specification
PNP high-voltage transistors	BF621; BF623

FEATURES

∙Low current (max. 50 mA)

∙High voltage (max. 300 V).

APPLICATIONS

∙ Video output stages.

DESCRIPTION

PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BF620 and BF622.

MARKING

TYPE NUMBER	MARKING CODE
BF621	DF
BF623	DB

LIMITING VALUES

PINNING

PIN	DESCRIPTION
1	emitter
2	collector
3	base

handbook, halfpage

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3

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			1			2		3
Bottom view									MAM297

Fig.1 Simplified outline (SOT89) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BF621		−	−300	V
	BF623		−	−250	V
VCEO	collector-emitter voltage	open base
	BF621		−	−300	V
	BF623		−	−250	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−50	mA
ICM	peak collector current		−	−100	mA
IBM	peak base current		−	−50	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	1.25	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

1999 Apr 21

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Philips Semiconductors			Product specification
PNP high-voltage transistors			BF621; BF623
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	100	K/W
Rth j-s	thermal resistance from junction to soldering point		20	K/W

Note

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −200	V	−	−10	nA
		IE = 0; VCB = −200	V; Tj = 150 °C	−	−10	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V		−	−50	nA
hFE	DC current gain	IC = −25 mA; VCE = −20 V		50	−
VCEsat	collector-emitter saturation voltage	IC = −30 mA; IB = −5 mA		−	−800	mV
Cre	feedback capacitance	IC = ic = 0; VCE = −30 V; f = 1 MHz		−	1.6	pF
fT	transition frequency	IC = −10 mA; VCE = −10 V; f = 100 MHz		60	−	MHz

1999 Apr 21

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