DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series
Schottky barrier double diodes
Product specification |
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1997 Oct 03 |
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File under Discrete Semiconductors, SC01 |
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Philips Semiconductors |
Product specification |
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Schottky barrier double diodes |
BAT140 series |
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FEATURES
∙Low switching losses
∙Capability of absorbing very high surge current
∙Fast recovery time
∙Guard ring protected
∙Plastic SMD package.
APPLICATIONS
∙Low power switched-mode power supplies
∙Rectification
∙Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package.
MARKING
TYPE NUMBER |
MARKING |
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CODE |
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BAT140A |
AT140A |
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BAT140C |
AT140C |
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BAT140S |
AT140S |
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PINNING
PIN |
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BAT140 |
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A |
C |
S |
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1 |
k1 |
a1 |
a1 |
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2 |
n.c. |
n.c. |
n.c. |
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3 |
k2 |
a2 |
k2 |
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4 |
a1, a2 |
k1, k2 |
k1, a2 |
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age |
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4 |
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1 |
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3 |
Top view |
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MSB002 - 1 |
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Fig.1 Simplified outline (SOT223) and pin configuration.
4
page
1 
3
2 n.c. MGL171
Fig.2 BAT140A diode configuration (symbol).
4
page
1 
3
2 n.c. MGL172
Fig.3 BAT140C diode configuration (symbol).
4
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1 
3
2 n.c. MGL173
Fig.4 BAT140S diode configuration (symbol).
1997 Oct 03 |
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Philips Semiconductors |
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Product specification |
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Schottky barrier double diodes |
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BAT140 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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− |
40 |
V |
IF |
continuous forward current |
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− |
1 |
A |
IF(AV) |
average forward current |
Tamb = 65 °C; |
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1 |
A |
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Rth j-a = 80 K/W; note 1; |
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VR(equiv) = 0.2 V; note 2 |
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IFSM |
non-repetitive peak forward current |
t = 8.3 μs half sinewave; |
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10 |
A |
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JEDEC method |
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IRSM |
non-repetitive peak reverse current |
tp = 100 μs |
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0.5 |
A |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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125 |
°C |
Notes
1.Refer to SOT223 standard mounting conditions.
2.For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.5 |
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IF = 100 mA; note 1 |
280 |
330 |
mV |
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IF = 1 A; note 1 |
460 |
500 |
mV |
IR |
reverse current |
VR = 10 V; note 1; see Fig.6 |
15 |
40 |
μA |
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VR = 40 V; note 1; see Fig.6 |
60 |
300 |
μA |
Cd |
diode capacitance |
VR = 4 V; f = 1 MHz; see Fig.7 |
65 |
80 |
pF |
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
100 |
K/W |
Note |
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1. Refer to SOT223 standard mounting conditions.
1997 Oct 03 |
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