Philips BC237, BC237B Datasheet

0 (0)
Philips BC237, BC237B Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

BC237; BC237B

NPN general purpose transistors

Product specification

1997 Sep 04

Supersedes data of 1997 Mar 06

File under Discrete Semiconductors, SC04

Philips Semiconductors

Product specification

 

 

NPN general purpose transistors

BC237; BC237B

 

 

 

 

FEATURES

Low current (max. 100 mA)

Low voltage (max. 45 V).

APPLICATIONS

General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B.

QUICK REFERENCE DATA

PINNING

PIN

 

 

 

 

 

DESCRIPTION

 

 

 

 

 

 

 

 

 

 

 

1

 

emitter

 

 

 

 

 

 

 

 

 

 

 

2

 

base

 

 

 

 

 

 

 

 

 

 

 

3

 

collector

 

 

 

 

 

 

 

 

 

 

 

 

 

handbook, halfpage1

3

 

2

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

MAM182

Fig.1

Simplified outline (TO-92; SOT54)

 

and symbol.

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VCBO

collector-base voltage

open emitter

50

V

VCEO

collector-emitter voltage

open base

45

V

ICM

peak collector current

 

200

mA

Ptot

total power dissipation

Tamb 25 °C

500

mW

hFE

DC current gain

IC = 2 mA; VCE = 5 V

 

 

 

 

BC237

 

120

460

 

 

BC237B

 

200

460

 

 

 

 

 

 

 

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

MHz

1997 Sep 04

2

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

NPN general purpose transistors

 

BC237; BC237B

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VCBO

collector-base voltage

open emitter

50

V

VCEO

collector-emitter voltage

open base

45

V

VEBO

emitter-base voltage

open collector

6

V

IC

collector current (DC)

 

100

mA

ICM

peak collector current

 

200

mA

IBM

peak base current

 

200

mA

Ptot

total power dissipation

Tamb 25 °C; note 1

500

mW

Tstg

storage temperature

 

65

+150

°C

Tj

junction temperature

 

150

°C

Tamb

operating ambient temperature

 

65

+150

°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

Note

 

 

 

 

1. Transistor mounted on an FR4 printed-circuit board.

1997 Sep 04

3

Loading...
+ 5 hidden pages